SCHEMBL1756558

SCHEMBL1756558

CCO[Si](C)(CCC(C)(C)C)OCC.[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1137844 0.98
SCHEMBL3684969 0.80
SCHEMBL1470653 0.76
SCHEMBL28537855 0.76
SCHEMBL135560 0.76
SCHEMBL1223952 0.76 CYP2D6 (0.36)
SCHEMBL1248810 0.75
SCHEMBL728666 0.75
SCHEMBL1459065 0.74
SCHEMBL28035997 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8293001-B2 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-23 US disclosed
US-20110143032-A1 Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-06-16 US disclosed
US-7943195-B2 Mixing of glass with hydrocarbons; chemical vapor deposition; mixing organosilane and/or organosiloxane precursors with porogens; neohexyl-1,3,5,7-tetramethylcyclo-tetrasiloxane AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-05-17 US disclosed
US-20080271640-A1 Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-11-06 US disclosed
US-7384471-B2 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-06-10 US disclosed
US-6846515-B2 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-01-25 US disclosed
US-20030232137-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-12-18 US disclosed
US-20030198742-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-10-23 US disclosed
EP-1354980-A1 Method for forming a porous SiOCH layer. AIR PRODUCTS AND CHEMICALS, INC. (US) 2003-10-22 EP disclosed