Known targets — ChEMBL curated mechanism
ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG
The experimentally established mechanism targets of Biphenyl. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.82 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.53 |
| ▸ | TAAR1 | Q96RJ0 | 2/20 | 0.53 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.53 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.53 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.53 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.53 |
| ▸ | NOTUM | Q6P988 | 1/20 | 0.53 |
| ▸ | MMP3 | P08254 | 1/20 | 0.53 |
| ▸ | BCL2L1 | Q07817 | 1/20 | 0.53 |
| ▸ | ATM | Q13315 | 1/20 | 0.47 |
| ▸ | SLC22A2 | O15244 | 1/20 | 0.47 |
| ▸ | SLC22A1 | O15245 | 1/20 | 0.47 |
| ▸ | SLC22A3 | O75751 | 1/20 | 0.47 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.47 |
| ▸ | NPC1 | O15118 | 2/20 | 0.47 |
| ▸ | RAB9A | P51151 | 2/20 | 0.47 |
| ▸ | MAOA | P21397 | 1/20 | 0.45 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.45 |
| ▸ | NFKB2 | Q00653 | 1/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Biphenyl SCHEMBL1157981 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL29839700 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL36559 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL8993020 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL51203 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL27966871 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL27842187 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL27907683 | 0.95 | ALDH1A1 (0.90) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL9634747 | 0.91 | ALDH1A1 (0.82) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 | |
| Biphenyl SCHEMBL1150073 | 0.91 | ALDH1A1 (0.82) | ALDH1A1MAPK1TAAR1CYP1A2CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1275095-C | Novel process for preparing resists | CLARIANT INT LTD (JP) | 2006-09-13 | — | — | CN | claimed |
| CN-1239556-A | Novel process for preparing resists | CLARIANT INT LTD (CH) | 1999-12-22 | — | — | CN | claimed |
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-20240085785-A1 | ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING | JSR CORPORATION (JP) | 2024-03-14 | — | — | US | disclosed |
| WO-2024039626-A1 | ADDITIVES FOR METAL OXIDE PHOTORESISTS, POSITIVE TONE DEVELOPMENT WITH ADDITIVES, AND DOUBLE BAKE DOUBLE DEVELOP PROCESSING | INPRIA CORPORATION (US) | 2024-02-22 | — | — | WO | disclosed |
| CN-117255971-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2023-12-19 | — | — | CN | disclosed |
| CN-111423587-A | Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern | 信越化学工业株式会社 | 2020-07-17 | — | — | CN | disclosed |
| CN-103025835-B | The compositions of coating on photoetching agent pattern | 默克专利有限公司 | 2016-06-29 | — | — | CN | disclosed |
| CN-101809502-B | Thick film resists | AZ ELECTRONIC MATERIALS USA | 2014-01-08 | — | — | CN | disclosed |
| CN-103025835-A | A composition for coating over a photoresist pattern | AZ ELECTRONIC MATERIALS USA | 2013-04-03 | — | — | CN | disclosed |
| US-20110122177-A1 | Ink Jet Recording Apparatus | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-05-26 | — | — | US | disclosed |
| US-6284427-B1 | Process for preparing resists | CLARIANT FINANCE (BVI) LIMITED (VG) | 2001-09-04 | — | — | US | disclosed |
| EP-0677788-B1 | Radiation-sensitive mixture | CLARIANT FINANCE BVI LTD (VG) | 2000-06-21 | — | — | EP | disclosed |
| CN-1239556-A | Novel process for preparing resists | CLARIANT INT LTD (CH) | 1999-12-22 | — | — | CN | disclosed |
| EP-0942329-A1 | NOVEL PROCESS FOR PREPARING RESISTS | Clariant International Ltd. (CH) | 1999-09-15 | — | — | EP | disclosed |
| EP-0710885-B1 | Radiation sensitive composition | CLARIANT FINANCE BVI LTD (VG) | 1998-12-30 | — | — | EP | disclosed |
| US-5738972-A | BLEND OF BINDER, DISSOLUTION INHIBITOR, PHOTOSENSITIVR COMPOUND, BASE, PHENOLIC RESIN AND SOLVENT | HOECHST JAPAN LIMITED (JP) | 1998-04-14 | — | — | US | disclosed |
| US-5663035-A | PHOTOSENSITIVE ACID GENERATORS, PHOTORESISTS, CONTROLLING ACID DIFFUSION WITH IODONIUM COMPOUND | HOECHST JAPAN LIMITED (JP) | 1997-09-02 | — | — | US | disclosed |
| EP-0710885-A1 | Radiation sensitive composition | HOECHST JAPAN LIMITED (JP) | 1996-05-08 | — | — | EP | disclosed |
| EP-0677788-A1 | Radiation-sensitive mixture | HOECHST JAPAN LIMITED (JP) | 1995-10-18 | — | — | EP | disclosed |