Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 5/20 | 0.58 |
| ▸ | TP53 | P04637 | 1/20 | 0.58 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.58 |
| ▸ | TSHR | P16473 | 1/20 | 0.58 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.58 |
| ▸ | CDK9 | P50750 | 1/20 | 0.58 |
| ▸ | CLK4 | Q9HAZ1 | 1/20 | 0.58 |
| ▸ | NAPRT | Q6XQN6 | 1/20 | 0.54 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.54 |
| ▸ | MAOA | P21397 | 1/20 | 0.54 |
| ▸ | MAOB | P27338 | 1/20 | 0.54 |
| ▸ | TGM2 | P21980 | 1/20 | 0.54 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.53 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.53 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.52 |
| ▸ | PTPN11 | Q06124 | 1/20 | 0.52 |
| ▸ | NPC1 | O15118 | 3/20 | 0.52 |
| ▸ | RAB9A | P51151 | 3/20 | 0.52 |
| ▸ | PKM | P14618 | 2/20 | 0.52 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL57554 | 0.85 | SMN1; SMN2 (0.70) | SMN1; SMN2TP53EPHX1TSHREPHX2 | |
| Benzene SCHEMBL28977956 | 0.85 | SMN1; SMN2 (0.70) | SMN1; SMN2TP53EPHX1TSHREPHX2 | |
| SCHEMBL9812574 | 0.84 | GAA (0.61) | TSHRMAOAMAOBALDH1A1KDM4E | |
| SCHEMBL219147 | 0.82 | KDM4E (0.66) | SMN1; SMN2TP53EPHX1TSHREPHX2 | |
| SCHEMBL14523000 | 0.82 | SMN1; SMN2 (0.54) | SMN1; SMN2TP53EPHX1TSHREPHX2 | |
| SCHEMBL459482 | 0.82 | SMN1; SMN2 (0.54) | SMN1; SMN2TP53EPHX1TSHREPHX2 | |
| SCHEMBL10717657 | 0.82 | SMN1; SMN2 (0.54) | SMN1; SMN2TP53EPHX1TSHREPHX2 | |
| SCHEMBL9856061 | 0.82 | SMN1; SMN2 (0.54) | SMN1; SMN2TP53EPHX1TSHREPHX2 | |
| SCHEMBL10690966 | 0.80 | MAPT (0.59) | EPHX1ALDH1A1KDM4EPTPN1PTPN11 | |
| SCHEMBL18920315 | 0.80 | MDM2 (0.59) | SMN1; SMN2EPHX1KDM4ENPC1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9280049-B2 | Pattern formation method and semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2016-03-08 | — | — | US | claimed |
| US-20150227045-A1 | PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-08-13 | — | — | US | claimed |
| US-9029067-B2 | Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same | JSR CORPORATION (JP) | 2015-05-12 | — | — | US | claimed |
| US-20150004547-A1 | RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME | JSR CORPORATION (JP) | 2015-01-01 | — | — | US | claimed |
| US-8877429-B2 | Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same | JSR CORPORATION (JP) | 2014-11-04 | — | — | US | claimed |
| US-8715901-B2 | Resin composition for forming fine pattern and method for forming fine pattern | JSR CORPORATION (JP) | 2014-05-06 | — | — | US | claimed |
| EP-1757990-B1 | Resin compositions for miniaturizing the resin pattern spaces or holes and method for miniaturizing the resin pattern spaces or holes using the same | JSR CORP (JP) | 2013-10-09 | — | — | EP | claimed |
| CN-102077144-B | Resin composition for making insoluble resist pattern, and method for formation of resist pattern by using the same | JSR CORP | 2013-06-05 | — | — | CN | claimed |
| US-8211624-B2 | Method for pattern formation and resin composition for use in the method | JSR CORPORATION (JP) | 2012-07-03 | — | — | US | claimed |
| EP-2378362-A1 | RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME | JSR Corporation (JP) | 2011-10-19 | — | — | EP | claimed |
| US-20110223544-A1 | RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME | JSR CORPORATION (JP) | 2011-09-15 | — | — | US | claimed |
| US-20110123936-A1 | RESIST PATTERN COATING AGENT AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2011-05-26 | — | — | US | claimed |
| CN-102077144-A | Resin composition for making insoluble resist pattern, and method for formation of resist pattern by using the same | JSR CORP | 2011-05-25 | — | — | CN | claimed |
| US-20110111349-A1 | RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME | JSR CORPORATION (JP) | 2011-05-12 | — | — | US | claimed |
| US-20100323292-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR CORPORATION (JP) | 2010-12-23 | — | — | US | claimed |
| US-20100190104-A1 | METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD | JSR CORPORATION (JP) | 2010-07-29 | — | — | US | claimed |
| EP-2128706-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR Corporation (JP) | 2009-12-02 | — | — | EP | claimed |
| US-20070259287-A1 | Resin Composition for Forming Fine Pattern and Method for Forming Fine Pattern | JSR CORPORATION (JP) | 2007-11-08 | — | — | US | claimed |
| EP-1757990-A1 | RESIN COMPOSITION FOR FORMING FINE PATTERN AND METHOD FOR FORMING FINE PATTERN | JSR Corporation (JP) | 2007-02-28 | — | — | EP | claimed |
| US-9280049-B2 | Pattern formation method and semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2016-03-08 | — | — | US | disclosed |
| US-20150227045-A1 | PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-08-13 | — | — | US | disclosed |
| US-9029067-B2 | Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same | JSR CORPORATION (JP) | 2015-05-12 | — | — | US | disclosed |
| US-20150004547-A1 | RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME | JSR CORPORATION (JP) | 2015-01-01 | — | — | US | disclosed |
| US-20140363773-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-8877429-B2 | Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same | JSR CORPORATION (JP) | 2014-11-04 | — | — | US | disclosed |
| CN-102077144-B | Resin composition for making insoluble resist pattern, and method for formation of resist pattern by using the same | JSR CORP | 2013-06-05 | — | — | CN | disclosed |
| US-20120244478-A1 | RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2012-09-27 | — | — | US | disclosed |
| US-8211624-B2 | Method for pattern formation and resin composition for use in the method | JSR CORPORATION (JP) | 2012-07-03 | — | — | US | disclosed |
| US-20120156621-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-06-21 | — | — | US | disclosed |
| EP-2378362-A1 | RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME | JSR Corporation (JP) | 2011-10-19 | — | — | EP | disclosed |
| US-20110223544-A1 | RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME | JSR CORPORATION (JP) | 2011-09-15 | — | — | US | disclosed |
| US-20110123936-A1 | RESIST PATTERN COATING AGENT AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2011-05-26 | — | — | US | disclosed |
| CN-102077144-A | Resin composition for making insoluble resist pattern, and method for formation of resist pattern by using the same | JSR CORP | 2011-05-25 | — | — | CN | disclosed |
| US-20110111349-A1 | RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME | JSR CORPORATION (JP) | 2011-05-12 | — | — | US | disclosed |
| US-20100323292-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| JP-2010210751-A | COATING AGENT FOR RESIST PATTERN AND METHOD FOR FORMING PATTERN BY USING THE AGENT | JSR CORP | 2010-09-24 | — | — | JP | disclosed |
| US-20100190104-A1 | METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD | JSR CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| EP-2128706-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR Corporation (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-2128706-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR Corporation (JP) | 2009-12-02 | — | — | EP | disclosed |