⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5549244 | 1.00 | — | — | |
| SCHEMBL3238199 | 0.87 | — | — | |
| Arsenic SCHEMBL5410229 | 0.87 | — | — | |
| Zinc Ion SCHEMBL516897 | 0.87 | — | — | |
| SCHEMBL258636 | 0.87 | — | — | |
| SCHEMBL1706033 | 0.87 | — | — | |
| SCHEMBL18097 | 0.87 | — | — | |
| SCHEMBL132332 | 0.87 | — | — | |
| SCHEMBL6714641 | 0.87 | — | — | |
| SCHEMBL17159989 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 23208 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12046698-B2 | Optoelectronic device having a boron nitride alloy electron blocking layer and method of production | KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) | 2024-07-23 | — | — | US | claimed |
| WO-2024149324-A1 | TRANSISTOR DEVICE | 北京大学 | 2024-07-18 | — | — | WO | claimed |
| CN-118352388-A | Dual gate semiconductor structure for power applications | QORVO美国公司 | 2024-07-16 | — | — | CN | claimed |
| CN-118335597-A | Method for producing a vertical semiconductor component and corresponding semiconductor component | 罗伯特·博世有限公司 | 2024-07-12 | — | — | CN | claimed |
| US-20240234564-A1 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICATION APPARATUS | Sony Group Corporation (JP) | 2024-07-11 | — | — | US | claimed |
| US-20240235159-A9 | SURFACE EMITTING LASER APPARATUS AND METHOD FOR MANUFACTURING THE SAME | HLJ TECHNOLOGY CO., LTD. (TW) | 2024-07-11 | — | — | US | claimed |
| US-20240234646-A1 | SOLID-STATE TRANSDUCER DEVICES WITH SELECTIVE WAVELENGTH REFLECTORS AND ASSOCIATED SYSTEMS AND METHODS | MICRON TECHNOLOGY INC (US) | 2024-07-11 | — | — | US | claimed |
| CN-118315416-A | Photoelectric co-regulation and control mixed tunnel junction bipolar transistor and preparation method thereof | 福州大学 | 2024-07-09 | — | — | CN | claimed |
| CN-118299395-A | Display panel | 武汉华星光电半导体显示技术有限公司 | 2024-07-05 | — | — | CN | claimed |
| US-20240222548-A1 | LIGHT EMITTING DIODE | TAIWAN-ASIA SEMICONDUCTOR CORPORATION (TW) | 2024-07-04 | — | — | US | claimed |
| US-5592501-A | A SEPARATE-CONFINEMENT HETEROSTRUCTURE LASER | CREE RESEARCH, INC. (US) | 1997-01-07 | — | — | US | claimed |
| EP-0734593-A1 | BUFFER STRUCTURE BETWEEN SILICON CARBIDE AND GALLIUM NITRIDE AND RESULTING SEMICONDUCTOR DEVICES | CREE RESEARCH, INC. (US) | 1996-10-02 | — | — | EP | claimed |
| EP-0731512-A2 | Light emitting diode | Hewlett-Packard Company (US) | 1996-09-11 | — | — | EP | claimed |
| WO-1996027213-A1 | HIGH GAIN ULTRAVIOLET PHOTOCONDUCTOR BASED ON WIDE BANDGAP NITRIDES | HONEYWELL INC. (US) | 1996-09-06 | — | — | WO | claimed |
| WO-1996024972-A1 | A SEMICONDUCTOR LASER | BRITISH TECHNOLOGY GROUP LIMITED (GB) | 1996-08-15 | — | — | WO | claimed |
| US-5534056-A | REFRACTIVE INDEX, PARTICLE SIZES | Kuehnle, Manfred R. (US) | 1996-07-09 | — | — | US | claimed |
| WO-1996011502-A1 | WAVELENGTH TUNING OF GaN-BASED LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS AND DISPLAYS BY INTRODUCTION OF DEEP DONORS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1996-04-18 | — | — | WO | claimed |
| EP-0659820-A2 | Composite media with selectable radiation-transmission properties | KUEHNLE, Manfred R. (US) | 1995-06-28 | — | — | EP | claimed |
| WO-1995017019-A1 | BUFFER STRUCTURE BETWEEN SILICON CARBIDE AND GALLIUM NITRIDE AND RESULTING SEMICONDUCTOR DEVICES | CREE RESEARCH, INC. (US) | 1995-06-22 | — | — | WO | claimed |
| US-5393993-A | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices | CREE RESEARCH, INC. (US) | 1995-02-28 | — | — | US | claimed |