⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3235143 | 0.89 | — | — | |
| SCHEMBL17763 | 0.87 | — | — | |
| SCHEMBL5549244 | 0.87 | — | — | |
| SCHEMBL1147913 | 0.87 | — | — | |
| SCHEMBL309693 | 0.87 | — | — | |
| SCHEMBL18097 | 0.75 | — | — | |
| SCHEMBL3235769 | 0.75 | — | — | |
| SCHEMBL132332 | 0.75 | — | — | |
| SCHEMBL1706033 | 0.75 | — | — | |
| SCHEMBL5550883 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111279495-B | Group III nitride semiconductor device having boron nitride alloy contact layer and method of manufacturing the same | 阿卜杜拉国王科技大学 | 2023-06-09 | — | — | CN | disclosed |
| CN-108538714-B | preparation method of p-type III-group nitride material | 中国电子科技集团公司第十三研究所 | 2021-06-15 | — | — | CN | disclosed |
| US-20200274024-A1 | III-NITRIDE SEMICONUCTOR DEVICES HAVING A BORON NITRIDE ALLOY CONTACT LAYER AND METHOD OF PRODUCTION | KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) | 2020-08-27 | — | — | US | disclosed |
| CN-111279495-A | Group III nitride semiconductor device having boron nitride alloy contact layer and method for manufacturing the same | 阿卜杜拉国王科技大学 | 2020-06-12 | — | — | CN | disclosed |
| US-7745850-B2 | Nitride-based semiconductor device with reduced leakage current | SANKEN ELECTRIC CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-7491983-B2 | Nitride-based semiconductor device of reduced current leakage | SANKEN ELECTRIC CO., LTD. (JP) | 2009-02-17 | — | — | US | disclosed |
| US-7456435-B2 | Light-emitting semiconductor device | SANKEN ELECTRIC CO., LTD. (JP) | 2008-11-25 | — | — | US | disclosed |
| US-20060275937-A1 | Method of fabricating light-emitting semiconductor device | SANKEN ELECTRIC CO., LTD. (JP) | 2006-12-07 | — | — | US | disclosed |
| US-20060138457-A1 | Nitride-based semiconductor device of reduced current leakage | SANKEN ELECTRIC CO., LTD. (JP) | 2006-06-29 | — | — | US | disclosed |
| US-20060118824-A1 | Semiconductor device with reduced leakage current, and method of fabrication | SANKEN ELECTRIC CO., LTD. (JP) | 2006-06-08 | — | — | US | disclosed |
| US-20050110029-A1 | Light-emitting semiconductor device and method of fabrication | SANKEN ELECTRIC CO., LTD. (JP) | 2005-05-26 | — | — | US | disclosed |