SCHEMBL17773397

SCHEMBL17773397

COCCN=C(Nc1ccccc1)Nc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 1/20 0.44
▸ POLB P06746 1/20 0.44
▸ GAA P10253 1/20 0.44
▸ APOBEC3G Q9HC16 1/20 0.44
▸ MAPT P10636 2/20 0.42
▸ HPGD P15428 2/20 0.42
▸ ALOX12 P18054 1/20 0.42
▸ MAPK1 P28482 1/20 0.42
▸ HTT P42858 1/20 0.42
▸ TP53 P04637 2/20 0.41
▸ KMT2A Q03164 2/20 0.41
▸ MEN1 O00255 1/20 0.41
▸ CXCR4 P61073 1/20 0.41
▸ CYP2C19 P33261 2/20 0.39
▸ CYP1A2 P05177 1/20 0.39
▸ TAS2R38 P59533 1/20 0.38
▸ NAPRT Q6XQN6 1/20 0.38
▸ HSD17B10 Q99714 1/20 0.38
▸ KCNH3 Q9ULD8 1/20 0.38
▸ LMNA P02545 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bromide SCHEMBL29489334 0.74 HDAC3 (0.43) ALDH1A1TP53CXCR4TAS2R38HSD17B10
SCHEMBL11144243 0.72 TAS2R38 (0.44) ALDH1A1GAATP53KMT2AMEN1
SCHEMBL27815262 0.72 SMN1; SMN2 (0.50) ALDH1A1HTTTP53KMT2AMEN1
SCHEMBL3469024 0.69 CYP3A4 (0.67) ALDH1A1MAPTHPGDALOX12MAPK1
SCHEMBL9804141 0.68 KMT2A (0.46) ALDH1A1POLBGAAAPOBEC3GMAPT
SCHEMBL9804133 0.68 KMT2A (0.46) ALDH1A1POLBGAAAPOBEC3GMAPT
SCHEMBL5623097 0.68 NPC1 (0.68) ALDH1A1GAAHPGDHTTTP53
SCHEMBL10904135 0.68 KDM4E (0.42) ALDH1A1MAPTKMT2AMEN1LMNA
SCHEMBL19716193 0.68 ALDH1A1 (0.65) ALDH1A1POLBGAAAPOBEC3GMAPT
SCHEMBL11184467 0.68 TAS2R38 (0.50) ALDH1A1POLBGAAMAPTTP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 — — US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 — — US disclosed
US-20160147155-A1 PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 — — US disclosed
US-20160147155-A1 PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 — — US disclosed
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