Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL17784200

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.O=S(=O)(O)C(F)(F)F

nearest known ligand 0.50

Full drug profile on Sugi Atlas →

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CA2 P00918 14/20 0.50
CA1 P00915 13/20 0.50
MMP1 P03956 6/20 0.50
MMP2 P08253 6/20 0.50
MMP9 P14780 6/20 0.50
MMP8 P22894 6/20 0.50
MMP13 P45452 6/20 0.50
F2 P00734 4/20 0.45
PRSS1 P07477 4/20 0.45
PRSS2 P07478 4/20 0.45
PRSS3 P35030 4/20 0.45
ALDH1A1 P00352 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
THRB P10828 1/20 0.33
CA7 P43166 1/20 0.30
CA13 Q8N1Q1 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL28495958 0.97 CA2 (0.48) CA2CA1MMP1MMP2MMP9
SCHEMBL23932 0.95 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL30354089 0.95 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL24140 0.92 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL1831941 0.92 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL6916713 0.92 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL1496643 0.92 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL6912911 0.92 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL21802716 0.92 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL6915199 0.92 CA2 (0.52) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9465287-B2 Methods of forming patterns for semiconductor device structures MICRON TECHNOLOGY, INC. (US) 2016-10-11 US claimed
CN-115989594-A Nonaqueous electrolyte secondary battery 松下知识产权经营株式会社 2023-04-18 CN disclosed
CN-115702511-A Negative electrode active material for secondary battery and secondary battery 松下知识产权经营株式会社 2023-02-14 CN disclosed
CN-115413377-A Positive electrode for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery 松下知识产权经营株式会社 2022-11-29 CN disclosed
CN-115362585-A Nonaqueous electrolyte secondary battery 松下知识产权经营株式会社 2022-11-18 CN disclosed
CN-115152048-A Negative electrode for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery 松下知识产权经营株式会社 2022-10-04 CN disclosed
CN-115039252-A Negative electrode for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery 松下知识产权经营株式会社 2022-09-09 CN disclosed
CN-114830391-A Non-aqueous electrolyte secondary battery 松下知识产权经营株式会社 2022-07-29 CN disclosed
US-9460909-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-10-04 US disclosed
US-20160155626-A1 Method for Manufacturing Semiconductor Device TAIWAN SEMICONDUCTOR MFG (TW) 2016-06-02 US disclosed