SCHEMBL17812741

SCHEMBL17812741

CCC(C)c1ccc2cc(C(C)(O)C3CCCC3)ccc2c1

nearest known ligand 0.36

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.36
ALDH1A1 P00352 3/20 0.36
HSD17B10 Q99714 2/20 0.36
USP2 O75604 1/20 0.36
GAA P10253 1/20 0.36
PKM P14618 1/20 0.36
HPGD P15428 1/20 0.36
ALOX15 P16050 1/20 0.36
RORC P51449 1/20 0.35
ABCB11 O95342 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
CYP2C9 P11712 1/20 0.33
SLC6A2 P23975 1/20 0.33
SLC6A4 P31645 1/20 0.33
SLC6A3 Q01959 1/20 0.33
CHRM2 P08172 1/20 0.33
CYP2D6 P10635 1/20 0.33
CHRM1 P11229 1/20 0.33
KCNH2 Q12809 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17812680 0.99 KMT2A (0.38) KMT2AALDH1A1HSD17B10USP2GAA
SCHEMBL17812602 0.86 KMT2A (0.44) KMT2AALDH1A1RORCNPSR1CYP2C9
SCHEMBL17812755 0.85 KMT2A (0.46) KMT2ARORCNPSR1CYP2C9CHRM2
SCHEMBL17461416 0.80 HSD17B10 (0.44) ALDH1A1HSD17B10USP2GAAPKM
SCHEMBL17812635 0.79 CYP19A1 (0.33) KMT2AALDH1A1HSD17B10USP2GAA
SCHEMBL18911067 0.76 CYP2A6 (0.42) KMT2AGAAPKMCHRM2CHRM1
SCHEMBL18905379 0.75 KEAP1 (0.35) KMT2AALDH1A1CHRM2CYP2D6CHRM1
SCHEMBL18911064 0.75 CYP2A6 (0.41) KMT2AGAAPKMHPGDCHRM2
SCHEMBL17812620 0.73 HSD17B10 (0.34) KMT2AALDH1A1HSD17B10USP2GAA
SCHEMBL18905434 0.73 CYP19A1 (0.35) KMT2ACHRM2CYP2D6CHRM1KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160161850-A1 SHRINK MATERIAL AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-09 US disclosed