Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | APP | P05067 | 1/20 | 0.41 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.33 |
| ▸ | PDE4A | P27815 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | SLC6A6 | P31641 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
| ▸ | BLM | P54132 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL422953 | 0.98 | APP (0.42) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL17819146 | 0.87 | APP (0.38) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL29387431 | 0.85 | APP (0.48) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL29551768 | 0.85 | APP (0.48) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL458345 | 0.84 | APP (0.39) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL220968 | 0.83 | APP (0.50) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL10484571 | 0.80 | APP (0.48) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL1258894 | 0.80 | APP (0.48) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL929912 | 0.80 | APP (0.48) | APPPTGS1PDE4ALMNASLC6A6 | |
| SCHEMBL21808785 | 0.80 | APP (0.48) | APPPTGS1PDE4ALMNASLC6A6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9856572-B2 | Additive for reducing voids after annealing of copper plating with through silicon via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2018-01-02 | — | — | US | claimed |
| US-20160190007-A1 | A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-30 | — | — | US | claimed |
| US-20160168738-A1 | Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-16 | — | — | US | claimed |
| US-9856572-B2 | Additive for reducing voids after annealing of copper plating with through silicon via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2018-01-02 | — | — | US | disclosed |
| US-20160190007-A1 | A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-30 | — | — | US | disclosed |
| US-20160168738-A1 | Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-16 | — | — | US | disclosed |