⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1781790 | 0.87 | — | — | |
| SCHEMBL27748061 | 0.87 | — | — | |
| SCHEMBL20491591 | 0.87 | — | — | |
| SCHEMBL4538543 | 0.87 | — | — | |
| SCHEMBL28507374 | 0.87 | — | — | |
| SCHEMBL37488 | 0.87 | — | — | |
| SCHEMBL20334976 | 0.75 | — | — | |
| SCHEMBL21328566 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL5898824 | 0.75 | — | — | |
| SCHEMBL507909 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-105702630-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2020-07-10 | — | — | CN | claimed |
| CN-105702630-A | Semiconductor structure and formation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-06-22 | — | — | CN | claimed |
| US-8502381-B2 | Barrier layer configurations and methods for processing microelectronic topographies having barrier layers | LAM RESEARCH CORPORATION (US) | 2013-08-06 | — | — | US | claimed |
| CN-105702630-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2020-07-10 | — | — | CN | disclosed |
| US-20180218942-A1 | METHODS FOR FORMING A BARRIER LAYER WITH PERIODIC CONCENTRATIONS OF ELEMENTS AND STRUCTURES RESULTING THEREFROM | LAM RES CORP (US) | 2018-08-02 | — | — | US | disclosed |
| US-9953866-B1 | Methods for forming a barrier layer with periodic concentrations of elements and structures resulting thereform | LAM RESEARCH CORPORATION (US) | 2018-04-24 | — | — | US | disclosed |
| CN-105702630-A | Semiconductor structure and formation method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-06-22 | — | — | CN | disclosed |
| US-8591985-B2 | Systems and methods affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes | LAM RESEARCH CORPORATION (US) | 2013-11-26 | — | — | US | disclosed |
| US-8502381-B2 | Barrier layer configurations and methods for processing microelectronic topographies having barrier layers | LAM RESEARCH CORPORATION (US) | 2013-08-06 | — | — | US | disclosed |
| US-20120263869-A1 | Methods for Forming a Barrier Layer with Periodic Concentrations of Elements and Structures Resulting Therefrom | LAM RESEARCH CORPORATION (US) | 2012-10-18 | — | — | US | disclosed |
| US-20110117328-A1 | Barrier Layer Configurations and Methods for Processing Microelectronic Topographies Having Barrier Layers | LAM RESEARCH (US) | 2011-05-19 | — | — | US | disclosed |
| US-20100279002-A1 | Systems and Methods Affecting Profiles of Solutions Dispensed Across Microelectronic Topographies During Electroless Plating Processes | LAM RESEARCH CORPORATION (US) | 2010-11-04 | — | — | US | disclosed |
| US-20100279071-A1 | Systems and Methods Affecting Profiles of Solutions Dispensed Across Microelectronic Topographies During Electroless Plating Processes | LAM RESEARCH CORPORATION (US) | 2010-11-04 | — | — | US | disclosed |
| US-7779782-B2 | Systems and methods affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes | LAM RESEARCH (US) | 2010-08-24 | — | — | US | disclosed |
| US-20100159208-A1 | Barrier Layer Configurations and Methods for Processing Microelectronic Topographies Having Barrier Layers | LAM RESEARCH (US) | 2010-06-24 | — | — | US | disclosed |
| US-7714441-B2 | Barrier layer configurations and methods for processing microelectronic topographies having barrier layers | LAM RESEARCH (US) | 2010-05-11 | — | — | US | disclosed |
| WO-2006020566-A1 | METHODS FOR FORMING A BARRIER LAYER WITH PERIODIC CONCENTRATIONS OF ELEMENTS AND STRUCTURES RESULTING THEREFROM AND SYSTEMS AND METHOD AFFECTING PROFILES OF SOLUTIONS DISPENSED ACROSS MICROELECTRONIC TOPOGRAPHIES DURING ELECTROLESS PLATING PROCESSES | BLUE29, LLC (US) | 2006-02-23 | — | — | WO | disclosed |
| US-20060029727-A1 | Systems and methods affecting profiles of solutions dispensed across microelectronic topographies during electroless plating processes | LAM RESEARCH CORPORATION | 2006-02-09 | — | — | US | disclosed |
| US-20060030143-A1 | Barrier layer configurations and methods for processing microelectronic topographies having barrier layers | LAM RESEARCH CORPORATION | 2006-02-09 | — | — | US | disclosed |
| US-20060029833-A1 | Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom | LAM RESEARCH CORPORATION | 2006-02-09 | — | — | US | disclosed |