⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29060602 | 0.89 | — | — | |
| SCHEMBL106559 | 0.87 | — | — | |
| SCHEMBL29065997 | 0.87 | — | — | |
| SCHEMBL770567 | 0.87 | — | — | |
| SCHEMBL2229158 | 0.87 | — | — | |
| SCHEMBL27445 | 0.87 | — | — | |
| SCHEMBL27748061 | 0.87 | — | — | |
| SCHEMBL4530969 | 0.75 | — | — | |
| SCHEMBL21328558 | 0.75 | — | — | |
| SCHEMBL8317548 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 119 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240331753-A1 | Magnetic Memory Cell and Magnetic Memory | ZHEJIANG HIKSTOR TECHNOLOGY CO., LTD. (CN) | 2024-10-03 | — | — | US | claimed |
| CN-115036414-A | Magnetic storage unit and magnetic memory | 浙江驰拓科技有限公司 | 2022-09-09 | — | — | CN | claimed |
| WO-2022184123-A1 | MAGNETIC STORAGE UNIT AND MAGNETIC MEMORY | 浙江驰拓科技有限公司 | 2022-09-09 | — | — | WO | claimed |
| US-8399942-B2 | Non-volatile magnetic memory element with graded layer | AVALANCHE TECHNOLOGY, INC. (US) | 2013-03-19 | — | — | US | claimed |
| EP-2118893-B1 | NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER | AVALANCHE TECHNOLOGY INC (US) | 2012-05-16 | — | — | EP | claimed |
| US-20120025338-A1 | Non-Volatile Magnetic Memory Element with Graded Layer | AVALANCHE TECHNOLOGY, INC. (US) | 2012-02-02 | — | — | US | claimed |
| US-8063459-B2 | Non-volatile magnetic memory element with graded layer | Avalanche Technologies, Inc. (US) | 2011-11-22 | — | — | US | claimed |
| US-20250063952-A1 | Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap Layer | AVALANCHE TECHNOLOGY, INC. | 2025-02-20 | — | — | US | disclosed |
| US-12133471-B2 | Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers | AVALANCHE TECHNOLOGY, INC. (US) | 2024-10-29 | — | — | US | disclosed |
| US-12133395-B2 | Multilayered seed for perpendicular magnetic structure including an oxide layer | AVALANCHE TECHNOLOGY, INC. (US) | 2024-10-29 | — | — | US | disclosed |
| US-20240331753-A1 | Magnetic Memory Cell and Magnetic Memory | ZHEJIANG HIKSTOR TECHNOLOGY CO., LTD. (CN) | 2024-10-03 | — | — | US | disclosed |
| US-20230413577-A1 | Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide Layer | AVALANCHE TECHNOLOGY, INC. | 2023-12-21 | — | — | US | disclosed |
| US-20230403945-A1 | Magnetic Memory Element Including Perpendicular Enhancement Layers and Dual Oxide Cap Layers | AVALANCHE TECHNOLOGY, INC. | 2023-12-14 | — | — | US | disclosed |
| US-8158880-B1 | Thin-film photovoltaic structures including semiconductor grain and oxide layers | AQT SOLAR, INC. (US) | 2012-04-17 | — | — | US | disclosed |
| US-20080199734-A1 | PERPENDICULAR MAGNETIC RECORDING MEDIUM, MANUFACTURING METHOD THEREOF AND MAGNETIC RECORDING DEVICE | FUJITSU LIMITED (JP) | 2008-08-21 | — | — | US | disclosed |
| WO-2008100868-A2 | NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY | YADAV TECHNOLOGY, INC. (US) | 2008-08-21 | — | — | WO | disclosed |
| CN-101246699-A | Perpendicular magnetic recording medium, manufacturing method thereof and magnetic recording device | FUJITSU LTD (JP) | 2008-08-20 | — | — | CN | disclosed |
| US-4431703-A | POLYSILOXANE AND SILOXANE LUBRICANTS; AMID DEVICES; TELEVISION; MAGNETIC TAPES | SONY CORPORATION (JP) | 1984-02-14 | — | — | US | disclosed |
| US-4396674-A | Magnetic recording medium with amino lubricating layer | SONY CORPORATION (JP) | 1983-08-02 | — | — | US | disclosed |
| US-4369230-A | POLYSILOXANE LUBRICANTS | SONY CORPORATION (JP) | 1983-01-18 | — | — | US | disclosed |