SCHEMBL18179355

SCHEMBL18179355

N#Cc1c(Oc2ccc3cc(C=O)ccc3c2)cccc1Oc1ccc2cc(C3(c4ccc5cc(Oc6cccc(Oc7ccc8cc(C=O)ccc8c7)c6C#N)ccc5c4)c4ccccc4-c4ccccc43)ccc2c1

nearest known ligand 0.33

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
GAA P10253 1/20 0.33
RCE1 Q9Y256 1/20 0.33
MEN1 O00255 1/20 0.32
NPC1 O15118 1/20 0.32
RAB9A P51151 1/20 0.32
KMT2A Q03164 1/20 0.32
TTR P02766 1/20 0.32
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
KDM4E B2RXH2 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
MAPT P10636 1/20 0.30
AR P10275 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18179356 0.96 GAA (0.33) GAARCE1MEN1NPC1RAB9A
SCHEMBL18723325 0.91 ESR1 (0.33) GAARCE1MEN1NPC1RAB9A
SCHEMBL18179353 0.90 GAA (0.33) GAARCE1MEN1NPC1RAB9A
SCHEMBL18179354 0.88 GAA (0.33) GAARCE1MEN1NPC1RAB9A
SCHEMBL18179341 0.87 LMNA (0.36) GAAMEN1KMT2ATTRKDM4E
SCHEMBL18712910 0.83 GAA (0.39) GAARCE1MEN1NPC1RAB9A
SCHEMBL18179358 0.83 PIM1 (0.37) GAARCE1MEN1NPC1RAB9A
SCHEMBL18179343 0.82 MAPT (0.35) GAAMEN1NPC1RAB9AKMT2A
SCHEMBL18179335 0.81 PIM1 (0.36) GAARCE1MEN1NPC1RAB9A
SCHEMBL16073106 0.80 AR (0.43) GAAMEN1NPC1RAB9AKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9958781-B2 Method for film formation, and pattern-forming method JSR CORPORATION (JP) 2018-05-01 US disclosed
US-9620378-B1 Composition for film formation, film, production method of patterned substrate, and compound JSR CORPORATION (JP) 2017-04-11 US disclosed
US-9620378-B1 Composition for film formation, film, production method of patterned substrate, and compound JSR CORPORATION (JP) 2017-04-11 US disclosed
US-20160314984-A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-10-27 US disclosed
US-20160314984-A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-10-27 US disclosed