SCHEMBL1825796

SCHEMBL1825796

C[CH]C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1827147 0.82 KDM4E (0.33)
SCHEMBL1826302 0.80 KDM4E (0.32)
SCHEMBL9323333 0.78 KDM4E (0.31)
SCHEMBL4866061 0.71
SCHEMBL1287907 0.69
SCHEMBL8091713 0.69
SCHEMBL892347 0.69 KDM4E (0.31)
SCHEMBL503913 0.67
SCHEMBL333613 0.67 KDM4E (0.35)
SCHEMBL199483 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101080674-B Composition for forming antireflection film, layered product, and method for forming resist pattern JSR CORP 2013-09-18 CN disclosed
EP-1818723-B1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR CORP (JP) 2011-05-04 EP disclosed
US-7709182-B2 Composition for forming antireflection film, layered product, and method of forming resist pattern JSR CORPORATION (JP) 2010-05-04 US disclosed
US-20080124524-A1 Composition For Forming Antireflection Film, Layered Product, And Method Of Forming Resist Pattern JSR CORPORATION (JP) 2008-05-29 US disclosed
CN-101080674-A Composition for forming antireflection film, layered product, and method for forming resist pattern JSR CORP (JP) 2007-11-28 CN disclosed
EP-1818723-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR Corporation (JP) 2007-08-15 EP disclosed