Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.42 |
| ▸ | POLB | P06746 | 1/20 | 0.34 |
| ▸ | APEX1 | P27695 | 1/20 | 0.34 |
| ▸ | HTT | P42858 | 1/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.34 |
| ▸ | THRB | P10828 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18470368 | 0.96 | TSHR (0.40) | TSHRPOLBAPEX1HTTTDP1 | |
| SCHEMBL18470370 | 0.91 | THRB (0.36) | TSHRTHRB | |
| SCHEMBL18470374 | 0.83 | TSHR (0.37) | TSHRTHRB | |
| SCHEMBL18470375 | 0.81 | TSHR (0.45) | TSHRTHRB | |
| SCHEMBL20332637 | 0.81 | — | — | |
| SCHEMBL18470418 | 0.79 | TSHR (0.35) | TSHRTHRB | |
| SCHEMBL20009293 | 0.77 | LMNA (0.44) | — | |
| SCHEMBL20009294 | 0.77 | LMNA (0.44) | — | |
| SCHEMBL20009296 | 0.77 | LMNA (0.44) | — | |
| SCHEMBL20009281 | 0.77 | LMNA (0.44) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| EP-4276534-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | Shin-Etsu Chemical Co., Ltd. (JP) | 2023-11-15 | — | — | EP | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-9944738-B2 | Polymer compound, positive resist composition, laminate, and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-17 | — | — | US | disclosed |
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| EP-3279734-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-02-07 | — | — | EP | disclosed |
| US-20170037167-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20170037167-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, LAMINATE, AND RESIST PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | WDR1, WDR26, LBR | TSHR 2544/4885POLB 928/4885APEX1 1529/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.