SCHEMBL18671978

SCHEMBL18671978

CCC(C)(I)C(=O)Oc1c2ccccc2cc2c(O)c(O)ccc12

nearest known ligand 0.36

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LCK P06239 3/20 0.36
PTPN22 Q9Y2R2 1/20 0.36
ERN1 O75460 1/20 0.35
MAPT P10636 4/20 0.34
KMT2A Q03164 2/20 0.34
MEN1 O00255 1/20 0.34
GAA P10253 3/20 0.34
KDM4E B2RXH2 2/20 0.34
TP53 P04637 1/20 0.34
HTT P42858 1/20 0.34
HSD17B10 Q99714 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.33
EGFR P00533 1/20 0.32
POLB P06746 2/20 0.32
ALDH1A1 P00352 1/20 0.32
LMNA P02545 1/20 0.32
GPR35 Q9HC97 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8737842 0.88 LCK (0.37) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL18671915 0.87 ALDH1A1 (0.38) ERN1KMT2AMEN1GAAKDM4E
SCHEMBL15189339 0.84 LCK (0.34) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL18671979 0.83 ALDH1A1 (0.38) MAPTKMT2AGAAKDM4ETP53
SCHEMBL17613198 0.80 ERN1 (0.37) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL18671981 0.80 LCK (0.36) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL8738223 0.78 LCK (0.37) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL23220779 0.77 LCK (0.36) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL12999449 0.77 LCK (0.34) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL17109940 0.77 CYP1A2 (0.37) ERN1MAPTKMT2AMEN1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20170210836-A1 POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-27 US disclosed
US-9632417-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 US disclosed