SCHEMBL18671981

SCHEMBL18671981

CCC(I)C(=O)Oc1c2ccccc2cc2c(O)c(O)ccc12

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LCK P06239 3/20 0.36
PTPN22 Q9Y2R2 1/20 0.36
ERN1 O75460 1/20 0.36
MAPT P10636 4/20 0.35
KMT2A Q03164 2/20 0.35
MEN1 O00255 1/20 0.35
GAA P10253 3/20 0.35
KDM4E B2RXH2 2/20 0.35
TP53 P04637 1/20 0.35
HTT P42858 1/20 0.35
HSD17B10 Q99714 1/20 0.35
GLA P06280 1/20 0.33
EGFR P00533 1/20 0.33
ALDH1A1 P00352 1/20 0.32
POLB P06746 2/20 0.32
LMNA P02545 1/20 0.32
GPR35 Q9HC97 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20274260 0.89 PTPN22 (0.37) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL18671921 0.87 KDM4E (0.39) ERN1MAPTKMT2AMEN1GAA
SCHEMBL8738223 0.86 LCK (0.37) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL20691750 0.83 KDM4E (0.40) PTPN22MAPTKMT2AMEN1GAA
SCHEMBL18671982 0.83 ALDH1A1 (0.38) MAPTKMT2AMEN1GAAKDM4E
SCHEMBL19173251 0.82 GAA (0.42) MAPTKMT2AMEN1GAAKDM4E
SCHEMBL19996756 0.81
SCHEMBL18671978 0.80 LCK (0.36) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL12999449 0.78 LCK (0.34) LCKPTPN22ERN1MAPTKMT2A
SCHEMBL18671928 0.77 NTRK1 (0.36) MAPTKMT2AMEN1GAAKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9632417-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 US disclosed