⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1895030 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL10633821 | 0.91 | — | — | |
| Fluoride SCHEMBL28257585 | 0.91 | — | — | |
| Hydrochloric Acid SCHEMBL10798468 | 0.91 | — | — | |
| Hydrochloric Acid SCHEMBL2798783 | 0.91 | — | — | |
| SCHEMBL9421787 | 0.89 | — | — | |
| SCHEMBL49524 | 0.89 | — | — | |
| Ammonia Solution, Strong SCHEMBL3277366 | 0.80 | — | — | |
| SCHEMBL5415465 | 0.80 | — | — | |
| SCHEMBL13279759 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-RE40114-E1 | Tungsten silicide (WSIX) deposition process for semiconductor manufacture | MICRON TECHNOLOGY, INC. (US) | 2008-02-26 | — | — | US | claimed |
| US-20050118336-A1 | Method for the deposition of silicon nitride | INFINEON TECHNOLOGIES AG (DE) | 2005-06-02 | — | — | US | claimed |
| US-6136684-A | CONTROL GROWING ON A POROUS SILICON LAYER A NONPOROUS MONOCRYSTALLINE SILICON LAYER IN AN ATMOSPHERE CONTAINING SILICON SOURCE GAS AND HYDROGEN GAS | CANON KABUSHIKI KAISHA (JP) | 2000-10-24 | — | — | US | claimed |
| US-5231056-A | Silane and dichlorosilane reactants | MICRON TECHNOLOGY, INC. (US) | 1993-07-27 | — | — | US | claimed |
| US-20250212498-A1 | INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-26 | — | — | US | disclosed |
| US-12255102-B2 | Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-03-18 | — | — | US | disclosed |
| CN-112582268-B | Semiconductor device and forming method | 中芯国际集成电路制造(上海)有限公司 | 2025-01-24 | — | — | CN | disclosed |
| US-20240105814-A1 | INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-03-28 | — | — | US | disclosed |
| CN-108305875-B | Method for manufacturing semiconductor device using spacer for source/drain confinement | 意法半导体公司 | 2024-02-02 | — | — | CN | disclosed |
| CN-220310402-U | Multipurpose purification edulcoration system in polycrystalline silicon production | 内蒙古润阳悦达新能源科技有限公司 | 2024-01-09 | — | — | CN | disclosed |
| US-11862709-B2 | Inner spacer structure and methods of forming such | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-01-02 | — | — | US | disclosed |
| US-20220352349-A1 | Inner Spacer Structure and Methods of Forming Such | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-03 | — | — | US | disclosed |
| US-6235568-B1 | Semiconductor device having deposited silicon regions and a method of fabrication | INTEL CORPORATION | 2001-05-22 | — | — | US | disclosed |
| US-5710454-A | Tungsten silicide polycide gate electrode formed through stacked amorphous silicon (SAS) multi-layer structure. | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 1998-01-20 | — | — | US | disclosed |
| EP-0430514-B1 | Substantially facet free selective epitaxial growth process | AT & T CORP (US) | 1996-01-31 | — | — | EP | disclosed |
| US-5273621-A | Selectively etching a silicon layer over silicon dioxide with water/hydrofluoric acid diluted in nitric acid | AT&T BELL LABORATORIES (US) | 1993-12-28 | — | — | US | disclosed |
| US-5168089-A | Covering silicon substrate with a mask having apertures to expose substrate to flow of hydrogen, hydrochloric acid and a silicon source gas while heating and pressurization | AT&T BELL LABORATORIES (US) | 1992-12-01 | — | — | US | disclosed |
| US-5062386-A | Induction heated pancake epitaxial reactor | EPITAXY SYSTEMS, INC. (US) | 1991-11-05 | — | — | US | disclosed |
| EP-0430514-A2 | Substantially facet free selective epitaxial growth process | AT&T Corp. (US) | 1991-06-05 | — | — | EP | disclosed |
| US-4910163-A | Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system | UNIVERSITY OF CONNECTICUT (US) | 1990-03-20 | — | — | US | disclosed |