SCHEMBL1897180

SCHEMBL1897180

C=Cc1ccccc1C(=O)OC1CC2CCC1(CC)C2

nearest known ligand 0.35

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 2/20 0.35
CYP2C9 P11712 2/20 0.35
CYP2C19 P33261 2/20 0.35
CYP2D6 P10635 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
CNR2 P34972 5/20 0.33
FAAH O00519 3/20 0.33
ALDH1A1 P00352 1/20 0.32
LMNA P02545 1/20 0.32
CYP1A2 P05177 1/20 0.32
CNR1 P21554 1/20 0.31
P2RX7 Q99572 1/20 0.31
KCNA3 P22001 1/20 0.30
NR1H4 Q96RI1 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1898638 0.83 CYP2C19 (0.42) CYP3A4CYP2C9CYP2C19CYP2D6TDP1
SCHEMBL1897655 0.74 CNR2 (0.32) CYP3A4CYP2C9CYP2C19CYP2D6TDP1
SCHEMBL7714268 0.73
SCHEMBL24950179 0.70 ALDH1A1 (0.34) CYP3A4CYP2C9CYP2C19CYP2D6TDP1
SCHEMBL19779575 0.70 ALDH1A1 (0.42) CYP3A4CYP2C9CYP2C19CYP2D6TDP1
SCHEMBL1898312 0.70 CNR2 (0.36) CYP3A4CNR2FAAHALDH1A1CNR1
SCHEMBL1902158 0.68 CYP3A4 (0.36) CYP3A4CYP2C9CYP2C19CYP2D6TDP1
SCHEMBL1397066 0.67 KDM4E (0.40) CNR2FAAHALDH1A1CNR1P2RX7
SCHEMBL1397070 0.67 EPHX2 (0.39) CYP3A4CNR2FAAHALDH1A1LMNA
SCHEMBL1900001 0.67 ALDH1A1 (0.36) CYP3A4CYP2C9CYP2C19CYP2D6ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed