SCHEMBL1902158

SCHEMBL1902158

C=Cc1ccccc1C(=O)OC1(CC)CCCC1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 2/20 0.36
TSHR P16473 3/20 0.35
ALDH1A1 P00352 6/20 0.34
POLB P06746 3/20 0.34
KDM4E B2RXH2 1/20 0.34
CTSL P07711 3/20 0.34
CTSB P07858 3/20 0.34
CTSK P43235 3/20 0.34
HDAC4 P56524 1/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
SCN1A P35498 2/20 0.32
SCN2A Q99250 2/20 0.32
SCN3A Q9NY46 2/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2D6 P10635 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1900001 0.99 ALDH1A1 (0.36) CYP3A4TSHRALDH1A1POLBKDM4E
SCHEMBL24305907 0.88 NPC1 (0.35) CYP3A4ALDH1A1POLBKDM4ECTSL
SCHEMBL24948264 0.87 CYP3A4 (0.34) CYP3A4TSHRALDH1A1POLBKDM4E
SCHEMBL6400218 0.84 TSHR (0.46) CYP3A4TSHRALDH1A1POLBKDM4E
SCHEMBL24950179 0.84 ALDH1A1 (0.34) CYP3A4TSHRALDH1A1KDM4EKMT2A
SCHEMBL24305895 0.83 CA12 (0.37) ALDH1A1KDM4ECTSBBACE1
SCHEMBL24349736 0.82 KDM4E (0.33) TSHRALDH1A1POLBKDM4ECTSL
SCHEMBL1898213 0.82 SCN1A (0.45) CYP3A4TSHRALDH1A1POLBKDM4E
SCHEMBL1897426 0.81 SCN1A (0.44) CYP3A4ALDH1A1POLBKDM4EMEN1
SCHEMBL24707014 0.80 TDP1 (0.45) CYP3A4TSHRALDH1A1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed