SCHEMBL1897184

SCHEMBL1897184

C=Cc1ccccc1C(=O)OCC(CC)CC

nearest known ligand 0.57

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.57
CYP3A4 P08684 3/20 0.57
CA2 P00918 1/20 0.57
PRSS1 P07477 1/20 0.55
PRSS2 P07478 1/20 0.55
PRSS3 P35030 1/20 0.55
LMNA P02545 1/20 0.52
TSHR P16473 6/20 0.49
MAPK1 P28482 2/20 0.42
ADRB2 P07550 6/20 0.42
ADRB1 P08588 6/20 0.42
ADRB3 P13945 6/20 0.42
TDP1 Q9NUW8 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
HSD17B10 Q99714 2/20 0.40
TP53 P04637 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1901758 0.87 ALDH1A1 (0.51) ALDH1A1CYP3A4CA2PRSS1PRSS2
SCHEMBL29030384 0.85 ALDH1A1 (0.56) ALDH1A1CYP3A4CA2PRSS1PRSS2
SCHEMBL4903411 0.85 ALDH1A1 (0.70) ALDH1A1CYP3A4CA2TSHRADRB2
SCHEMBL29368000 0.84 ALDH1A1 (0.76) ALDH1A1CYP3A4CA2PRSS1PRSS2
SCHEMBL420283 0.84 ALDH1A1 (0.76) ALDH1A1CYP3A4CA2PRSS1PRSS2
SCHEMBL30385424 0.83 TSHR (0.67) ALDH1A1CYP3A4LMNATSHRMAPK1
SCHEMBL2002577 0.83 TSHR (0.67) ALDH1A1CYP3A4LMNATSHRMAPK1
SCHEMBL1895681 0.82 ALDH1A1 (0.49) ALDH1A1CYP3A4CA2PRSS1PRSS2
SCHEMBL4905609 0.80 ALDH1A1 (0.69) ALDH1A1CYP3A4LMNATSHRMAPK1
SCHEMBL1895179 0.80 ALDH1A1 (0.54) ALDH1A1CYP3A4CA2PRSS1PRSS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed