SCHEMBL1900290

SCHEMBL1900290

C=Cc1ccccc1C(=O)OCCC(C)CCC

nearest known ligand 0.49

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.49
TSHR P16473 7/20 0.47
TDP1 Q9NUW8 2/20 0.47
L3MBTL1 Q9Y468 2/20 0.47
CYP3A4 P08684 4/20 0.46
MAPK1 P28482 2/20 0.46
TP53 P04637 1/20 0.46
LMNA P02545 2/20 0.44
HSD17B10 Q99714 2/20 0.42
KDM4E B2RXH2 2/20 0.41
CA2 P00918 1/20 0.40
POLB P06746 1/20 0.40
PRSS1 P07477 1/20 0.39
PRSS2 P07478 1/20 0.39
PRSS3 P35030 1/20 0.39
ADRB2 P07550 1/20 0.38
ADRB1 P08588 1/20 0.38
ADRB3 P13945 1/20 0.38
GAA P10253 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1897807 0.91 ALDH1A1 (0.46) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL1895681 0.88 ALDH1A1 (0.49) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL4906053 0.86 TSHR (0.49) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL3686637 0.86 ALDH1A1 (0.66) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL4905609 0.84 ALDH1A1 (0.69) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL1902384 0.82 ALDH1A1 (0.57) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL1397837 0.82 TSHR (0.71) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL4894269 0.81 TSHR (0.71) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL28924730 0.81 ALDH1A1 (0.58) ALDH1A1TSHRTDP1L3MBTL1CYP3A4
SCHEMBL1895179 0.81 ALDH1A1 (0.54) ALDH1A1TSHRTDP1L3MBTL1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed