SCHEMBL1900630

SCHEMBL1900630

C=CC(=O)OC1CCCOC1=O

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
POLB P06746 3/20 0.38
KDM4E B2RXH2 4/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
ALDH1A1 P00352 5/20 0.35
MAPK1 P28482 3/20 0.35
HPGD P15428 2/20 0.35
HSD17B10 Q99714 1/20 0.35
TSHR P16473 1/20 0.35
CYP1A2 P05177 2/20 0.35
CYP2C19 P33261 2/20 0.35
CYP2C9 P11712 1/20 0.35
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30525802 0.95 POLB (0.37) POLBKDM4ESMN1; SMN2ALDH1A1MAPK1
SCHEMBL526020 0.90 POLB (0.46) POLBKDM4ESMN1; SMN2ALDH1A1MAPK1
Phthalic Acid SCHEMBL29089131 0.83 KDM4E (0.39) POLBKDM4ESMN1; SMN2ALDH1A1HPGD
SCHEMBL31534014 0.79 POLB (0.32) POLB
SCHEMBL28658121 0.77 POLB (0.40) POLBKDM4ESMN1; SMN2ALDH1A1MAPK1
SCHEMBL1899739 0.77 MAPK1 (0.41) POLBKDM4ESMN1; SMN2ALDH1A1MAPK1
SCHEMBL685643 0.75 MAPK1 (0.45) POLBKDM4ESMN1; SMN2ALDH1A1MAPK1
SCHEMBL12123893 0.75 TDP1 (0.42) POLBKDM4ESMN1; SMN2ALDH1A1MAPK1
SCHEMBL1899432 0.74 POLB (0.54) POLBKDM4ESMN1; SMN2ALDH1A1HPGD
SCHEMBL7975297 0.74 MAPK1 (0.47) POLBKDM4ESMN1; SMN2ALDH1A1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122011271-A Acrylic copolymer, preparation method and application thereof and photoresist composition 福建泓光半导体材料有限公司 2026-05-12 CN disclosed
CN-120118458-A Curable composition, resin, and cured product 东京应化工业株式会社 2025-06-10 CN disclosed
CN-119937242-A Photosensitive resin composition 东京应化工业株式会社 2025-05-06 CN disclosed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-7223516-B2 Positive type photoresist composition FUJIFILM CORPORATION (JP) 2007-05-29 US disclosed
US-7223516-B2 Positive type photoresist composition FUJIFILM CORPORATION (JP) 2007-05-29 US disclosed