SCHEMBL1899432

SCHEMBL1899432

C=Cc1ccc(C(=O)OC2CCCOC2=O)cc1

nearest known ligand 0.54

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
POLB P06746 4/20 0.54
ALDH1A1 P00352 3/20 0.50
HPGD P15428 1/20 0.50
TDP1 Q9NUW8 2/20 0.45
MEN1 O00255 1/20 0.45
KMT2A Q03164 1/20 0.45
CASP6 P55212 1/20 0.42
SMN1; SMN2 Q16637 3/20 0.41
KDM4E B2RXH2 2/20 0.41
TSHR P16473 1/20 0.37
NTSR1 P30989 1/20 0.37
ATM Q13315 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1895801 0.92 POLB (0.64) POLBALDH1A1HPGDTDP1MEN1
SCHEMBL24812553 0.86 POLB (0.57) POLBALDH1A1HPGDTDP1MEN1
SCHEMBL16398689 0.78 POLB (0.61) POLBALDH1A1HPGDTDP1MEN1
SCHEMBL8529372 0.78 ALDH1A1 (0.36) ALDH1A1HPGDSMN1; SMN2KDM4E
SCHEMBL14527850 0.77 NPC1 (0.39) POLBALDH1A1HPGDMEN1KMT2A
SCHEMBL1900630 0.74 POLB (0.38) POLBALDH1A1HPGDTDP1MEN1
SCHEMBL1900558 0.74 POLB (0.40) POLBALDH1A1HPGDTDP1MEN1
SCHEMBL27439468 0.74 MET (0.38) POLBALDH1A1SMN1; SMN2KDM4ETSHR
SCHEMBL3283929 0.73 MEN1 (0.41) POLBALDH1A1HPGDMEN1KMT2A
SCHEMBL7749496 0.73 POLB (0.68) POLBALDH1A1HPGDTDP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed