⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL144709 | 0.95 | — | — | |
| Hydrochloric Acid SCHEMBL2439108 | 0.91 | — | — | |
| Water SCHEMBL190437 | 0.91 | — | — | |
| SCHEMBL9752218 | 0.91 | — | — | |
| Fluoride Ion SCHEMBL4617075 | 0.82 | — | — | |
| Perchlorate SCHEMBL6561565 | 0.81 | — | — | |
| Fluoride Ion SCHEMBL4617213 | 0.76 | — | — | |
| SCHEMBL5142546 | 0.76 | — | — | |
| Formic Acid SCHEMBL3812921 | 0.75 | BBOX1 (0.30) | — | |
| SCHEMBL10385914 | 0.75 | BBOX1 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112585299-A | Chemical polishing liquid and surface treatment method using same | 三菱瓦斯化学株式会社 | 2021-03-30 | — | — | CN | disclosed |
| EP-1959303-B1 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| US-8658053-B2 | Etching composition for metal material and method for manufacturing semiconductor device by using same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-02-25 | — | — | US | disclosed |
| EP-1628336-B1 | Cleaning liquid and cleaning method | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-04 | — | — | EP | disclosed |
| US-7998914-B2 | Cleaning solution for semiconductor device or display device, and cleaning method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-08-16 | — | — | US | disclosed |
| US-20100216315-A1 | ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-08-26 | — | — | US | disclosed |
| US-20100152085-A1 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-20090246967-A1 | SEMICONDUCTOR SURFACE TREATMENT AGENT | MITSUBISHI GAS CHEMICAL COMPANY, LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
| US-7572758-B2 | aqueous solution of nitric acid, sulfuric acid, and specified amount of either ammonium fluoride or tetramethylammonium fluoride, and a base; for semicondutors or displays with metal wirings; removes etch residues without oxidizing or corroding the materials of copper wirings | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2009-08-11 | — | — | US | disclosed |
| US-20080210900-A1 | Selective Wet Etchings Of Oxides | PNC BANK, NATIONAL ASSOCIATION | 2008-09-04 | — | — | US | disclosed |
| EP-1959303-A1 | CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-08-20 | — | — | EP | disclosed |
| EP-1956644-A1 | SEMICONDUCTOR SURFACE TREATMENT AGENT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-08-13 | — | — | EP | disclosed |
| EP-1895577-A1 | ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-03-05 | — | — | EP | disclosed |
| EP-1880410-A2 | SELECTIVE WET ETCHING OF OXIDES | SACHEM, INC. (US) | 2008-01-23 | — | — | EP | disclosed |
| WO-2006124201-A2 | SELECTIVE WET ETCHING OF OXIDES | SACHEM, INC. (US) | 2006-11-23 | — | — | WO | disclosed |
| US-20060040838-A1 | Cleaning liquid and cleaning method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-02-23 | — | — | US | disclosed |
| EP-1628336-A2 | Cleaning liquid and cleaning method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-02-22 | — | — | EP | disclosed |
| US-20040224866-A1 | Cleaning solution and cleaning process using the solution | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-11-11 | — | — | US | disclosed |
| US-20040188385-A1 | Etching agent composition for thin films having high permittivity and process for etching | MITSUBISHI GAS CHEMICAL CO., INC. (JP) | 2004-09-30 | — | — | US | disclosed |