⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2102494 | 0.92 | — | — | |
| SCHEMBL2101090 | 0.92 | — | — | |
| SCHEMBL7627797 | 0.89 | — | — | |
| SCHEMBL359593 | 0.79 | MGLL (0.31) | — | |
| SCHEMBL1576944 | 0.74 | — | — | |
| SCHEMBL21359830 | 0.72 | — | — | |
| SCHEMBL2101775 | 0.72 | — | — | |
| SCHEMBL2104186 | 0.72 | — | — | |
| SCHEMBL2103111 | 0.69 | — | — | |
| SCHEMBL2100103 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7956207-B2 | such as bis(dimethylamino)bis(bis(trimethylsilyl)amino)hafnium, used as films on substrates such as wafers in the manufacture of semiconductors, dielectrics, barriers and electrodes having heat resistance | PRAXAIR TECHNOLOGY, INC. (US) | 2011-06-07 | — | — | US | claimed |
| EP-2069369-A1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2009-06-17 | — | — | EP | claimed |
| WO-2008039960-A1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2008-04-03 | — | — | WO | claimed |
| US-20080081922-A1 | Heteroleptic organometallic compounds | PRAXAIR TECHNOLOGY, INC. | 2008-04-03 | — | — | US | claimed |
| EP-2069369-B1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY INC (US) | 2016-11-23 | — | — | EP | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8164166-B2 | Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-7956207-B2 | such as bis(dimethylamino)bis(bis(trimethylsilyl)amino)hafnium, used as films on substrates such as wafers in the manufacture of semiconductors, dielectrics, barriers and electrodes having heat resistance | PRAXAIR TECHNOLOGY, INC. (US) | 2011-06-07 | — | — | US | disclosed |
| EP-2069369-A1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2009-06-17 | — | — | EP | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |
| WO-2008039960-A1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2008-04-03 | — | — | WO | disclosed |
| US-20080081922-A1 | Heteroleptic organometallic compounds | PRAXAIR TECHNOLOGY, INC. | 2008-04-03 | — | — | US | disclosed |