SCHEMBL359593

SCHEMBL359593

CCN(CC)[Si](N(CC)CC)(N(CC)CC)N(CC)CC

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
MGLL Q99685 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7627797 0.84
SCHEMBL2102494 0.79
SCHEMBL2101090 0.79
SCHEMBL1927372 0.79
SCHEMBL1576944 0.77
SCHEMBL9845415 0.73
SCHEMBL1448901 0.73 HTT (0.32)
SCHEMBL329203 0.73 HTT (0.32)
SCHEMBL230819 0.73
SCHEMBL431586 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 609 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-20230126516-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2023-04-27 US claimed
US-20230089397-A1 AIR GAP FORMING METHOD AND SELECTIVE DEPOSITION METHOD ASM IP HOLDING B.V. (NL) 2023-03-23 US claimed
EP-3428959-B1 METHOD FOR PRODUCING SILICON NITRIDE FILM, AND SILICON NITRIDE FILM TAIYO NIPPON SANSO CORP (JP) 2023-03-01 EP claimed
CN-108713243-B Method for producing silicon nitride film and silicon nitride film 大阳日酸株式会社 2022-11-01 CN claimed
CN-110573652-B Novel formulations for depositing silicon doped hafnium oxide as ferroelectric material 弗萨姆材料美国有限责任公司 2022-07-22 CN claimed
US-11193206-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials VERSUM MATERIALS US, LLC (US) 2021-12-07 US claimed
EP-3039068-B1 MOISTURE CURABLE COMPOUND WITH AMINO ACIDS MOMENTIVE PERFORMANCE MAT INC (US) 2020-12-16 EP claimed
EP-3074450-B1 MOISTURE CURABLE COMPOUND WITH METAL-ARENE COMPLEXES MOMENTIVE PERFORMANCE MAT INC (US) 2020-11-11 EP claimed
US-20060062917-A1 Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane APPLIED MATERIALS, INC. 2006-03-23 US claimed
US-20050118218-A1 Emulsion containing organosilicon-based portions of hollow spheres L'OREAL (FR) 2005-06-02 US claimed
EP-1530961-A2 Emulsion containing hollow organosilicon particles L'OREAL (FR) 2005-05-18 EP claimed
CN-1521172-A Organic metal compound and its manufacturing method ,solution materials and thin films containing the same compound 三菱综合材料株式会社 2004-08-18 CN claimed
US-20040089026-A1 Precursor and method of growing doped glass films BELLMAN ROBERT A (US) 2004-05-13 US claimed
EP-1321973-A2 CVD deposition of a metal-silicon-oxynitride gate dielectrics TEXAS INSTRUMENTS INCORPORATED (US) 2003-06-25 EP claimed
US-20030111678-A1 CVD deposition of M-SION gate dielectrics TEXAS INSTRUMENTS INCORPORATED 2003-06-19 US claimed
WO-2003048408-A1 PRECURSOR AND METHOD OF GROWING DOPED GLASS FILMS CORNING INCORPORATED (US) 2003-06-12 WO claimed
US-20030104209-A1 Precursor and method of growing doped glass films CORNING INCORPORATED 2003-06-05 US claimed
US-5772757-A Apparatus and method for growing semiconductor crystal FUJITSU LIMITED (JP) 1998-06-30 US claimed