⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1928879 | 0.94 | — | — | |
| SCHEMBL6564295 | 0.77 | — | — | |
| SCHEMBL42413 | 0.73 | — | — | |
| SCHEMBL2121122 | 0.65 | — | — | |
| Sulfuric Acid SCHEMBL2545783 | 0.63 | — | — | |
| SCHEMBL3170288 | 0.56 | CA1 (0.30) | — | |
| SCHEMBL31677454 | 0.56 | MGLL (0.30) | — | |
| SCHEMBL20811 | 0.56 | — | — | |
| SCHEMBL1746 | 0.56 | — | — | |
| SCHEMBL7097725 | 0.56 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2069369-B1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY INC (US) | 2016-11-23 | — | — | EP | claimed |
| US-9362475-B2 | Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition | GM Global Technology Operations LLC (US) | 2016-06-07 | — | — | US | claimed |
| US-20150270466-A1 | THERMOELECTRIC MATERIAL AND METHOD OF MAKING THE SAME | GM Global Technology Operations LLC (US) | 2015-09-24 | — | — | US | claimed |
| US-7956207-B2 | such as bis(dimethylamino)bis(bis(trimethylsilyl)amino)hafnium, used as films on substrates such as wafers in the manufacture of semiconductors, dielectrics, barriers and electrodes having heat resistance | PRAXAIR TECHNOLOGY, INC. (US) | 2011-06-07 | — | — | US | claimed |
| US-7799671-B1 | Interfacial layers for electromigration resistance improvement in damascene interconnects | NOVELLUS SYSTEMS, INC. (US) | 2010-09-21 | — | — | US | claimed |
| US-7648899-B1 | Interfacial layers for electromigration resistance improvement in damascene interconnects | NOVELLUS SYSTEMS, INC. (US) | 2010-01-19 | — | — | US | claimed |
| EP-2069369-A1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2009-06-17 | — | — | EP | claimed |
| WO-2008039960-A1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2008-04-03 | — | — | WO | claimed |
| US-20080081922-A1 | Heteroleptic organometallic compounds | PRAXAIR TECHNOLOGY, INC. | 2008-04-03 | — | — | US | claimed |
| US-20250314008-A1 | Ceramic-Polymer Composites and Methods of Making the Same | TEMPLE UNIVERSITY OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION | 2025-10-09 | — | — | US | disclosed |
| US-12091814-B2 | Ceramic-polymer composites and methods of making the same | TEMPLE UNIVERSITY-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION (US) | 2024-09-17 | — | — | US | disclosed |
| US-20200354883-A1 | Ceramic-Polymer Composites and Methods of Making the Same | TEMPLE UNIVERSITY-OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION | 2020-11-12 | — | — | US | disclosed |
| EP-2259303-B1 | Interfacial capping layers for interconnects | NOVELLUS SYSTEMS INC (US) | 2018-09-19 | — | — | EP | disclosed |
| EP-2188413-B1 | METHOD FOR ATOMIC LAYER DEPOSITION USING AN ATMOSPHERIC PRESSURE GLOW DISCHARGE PLASMA | FUJIFILM MFG EUROPE BV (NL) | 2018-07-11 | — | — | EP | disclosed |
| US-20080119098-A1 | Atomic layer deposition on fibrous materials | HONEYWELL INTERNATINAL INC. | 2008-05-22 | — | — | US | disclosed |
| WO-2008039960-A1 | HETEROLEPTIC ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2008-04-03 | — | — | WO | disclosed |
| US-20080081922-A1 | Heteroleptic organometallic compounds | PRAXAIR TECHNOLOGY, INC. | 2008-04-03 | — | — | US | disclosed |
| US-7312165-B2 | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices | JURSICH GREGORY M | 2007-12-25 | — | — | US | disclosed |
| WO-2007145513-A1 | METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING AN ATMOSPHERIC PRESSURE GLOW DISCHARGE PLASMA | FUJIFILM MANUFACTURING EUROPE B.V. (NL) | 2007-12-21 | — | — | WO | disclosed |
| US-20050266700-A1 | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices | JURSICH GREGORY M | 2005-12-01 | — | — | US | disclosed |