SCHEMBL1953523

SCHEMBL1953523

O=[C]Oc1[c]cccc1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3421280 0.77 — —
SCHEMBL2450335 0.74 — —
SCHEMBL446263 0.73 — —
SCHEMBL152163 0.72 LTA4H (0.32) —
SCHEMBL329137 0.72 — —
SCHEMBL11783113 0.71 — —
SCHEMBL1413 0.69 — —
SCHEMBL9980586 0.69 — —
SCHEMBL10395477 0.69 ALDH1A1 (0.42) —
SCHEMBL1404380 0.69 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5874193-A HOLE BLOCKING LAYER COMPRISED OF A CROSSLINKED POLYSILOXANE POLYMER; MINIMIZING DARK DECAY XEROX CORPORATION (US) 1999-02-23 — — US claimed
US-11687003-B2 Negative resist pattern-forming method, and composition for upper layer film formation JSR CORPORATION (JP) 2023-06-27 — — US disclosed
US-11592746-B2 Radiation-sensitive resin composition, resist pattern-forming method, compound and method of generating acid JSR CORPORATION (JP) 2023-02-28 — — US disclosed
CN-114764213-A Negative photosensitive resin composition 味之素株式会社 2022-07-19 — — CN disclosed
CN-114545738-A Positive photosensitive resin composition 味之素株式会社 2022-05-27 — — CN disclosed
US-10824073-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2020-11-03 — — US disclosed
US-20200341376-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND AND METHOD OF GENERATING ACID JSR CORPORATION (JP) 2020-10-29 — — US disclosed
US-20190004426-A1 NEGATIVE RESIST PATTERN-FORMING METHOD, AND COMPOSITION FOR UPPER LAYER FILM FORMATION JSR CORPORATION (JP) 2019-01-03 — — US disclosed
US-20180329298-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-11-15 — — US disclosed
US-10073344-B2 Negative resist pattern-forming method, and composition for upper layer film formation JSR CORPORATION (JP) 2018-09-11 — — US disclosed
WO-2000020465-A1 NOVEL CHAIN TRANSFER AGENTS THE UNIVERSITY OF AKRON (US) 2000-04-13 — — WO disclosed
US-5874193-A HOLE BLOCKING LAYER COMPRISED OF A CROSSLINKED POLYSILOXANE POLYMER; MINIMIZING DARK DECAY XEROX CORPORATION (US) 1999-02-23 — — US disclosed
EP-0882738-A1 DIENE RUBBER, PROCESS FOR PRODUCING THE RUBBER AND RUBBER COMPOSITION CONTAINING THE SAME NIPPON ZEON CO., LTD. (JP) 1998-12-09 — — EP disclosed
EP-0864592-A1 DIENE RUBBER NIPPON ZEON CO., LTD. (JP) 1998-09-16 — — EP disclosed
US-5756777-A THERMOSETTING RESINS; PHOTOPOLYMERIZABLE; CURABLE DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 1998-05-26 — — US disclosed
US-4720446-A Color photographic light-sensitive material FUJI PHOTO FILM CO., LTD. (JP) 1988-01-19 — — US disclosed
US-4596756-A Ethylenically unsaturated monomer, unsaturated nitrile containing monomer FUJI PHOTO FILM CO., LTD. (JP) 1986-06-24 — — US disclosed
EP-0129219-A2 Photographic elements FUJI PHOTO FILM CO., LTD. (JP) 1984-12-27 — — EP disclosed
US-4374924-A CATIONIC POLYMERS COMPRISING QUATERNIZED COPOLYMERS OF P-DIVINYLBENZENE OR A DIACRYLIC ESTER AND AN AMINO-CONTAINING ACRYLIC ESTER OR AMIDE FUJI PHOTO FILM CO., LTD. (JP) 1983-02-22 — — US disclosed
US-4371582-A INCORPORATING A WATER INSOLUBLE LATEX FUJI PHOTO FILM CO., LTD. (JP) 1983-02-01 — — US disclosed
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