SCHEMBL1955151

SCHEMBL1955151

[B].[Ge].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1955153 1.00
Strontium SCHEMBL31571129 0.87
SCHEMBL29350829 0.87
SCHEMBL30509662 0.87
SCHEMBL31553277 0.87
Charcoal, Activated SCHEMBL31083577 0.87
SCHEMBL30509660 0.87
SCHEMBL965774 0.82
SCHEMBL1470889 0.82
SCHEMBL23710 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1426 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250234524-A1 MEMORY DEVICE INCLUDING WORD LINE STRUCTURE WITH HIGH-K GATE DIELECTRIC LAYER AND METHOD FOR PREPARING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2025-07-17 US claimed
US-20250234525-A1 MEMORY DEVICE INCLUDING WORD LINE STRUCTURE WITH HIGH-K GATE DIELECTRIC LAYER AND METHOD FOR PREPARING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2025-07-17 US claimed
US-20240071818-A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME UNITED MICROELECTRONICS CORP. (TW) 2024-02-29 US claimed
CN-113745159-B Method for forming semiconductor device 台湾积体电路制造股份有限公司 2023-12-29 CN claimed
US-11854904-B2 Different source/drain profiles for n-type FinFETs and p-type FinFETs TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-12-26 US claimed
CN-113345896-B Dynamic random access memory device and manufacturing method thereof 华邦电子股份有限公司 2023-09-22 CN claimed
US-11699617-B2 Method for fabricating semiconductor device with alleviation feature NANYA TECHNOLOGY CORPORATION (TW) 2023-07-11 US claimed
CN-110729189-B Semiconductor device and method for manufacturing the same 中芯国际集成电路制造(天津)有限公司 2023-06-30 CN claimed
US-11678480-B2 Method for fabricating semiconductor device with porous decoupling features NANYA TECHNOLOGY CORPORATION (TW) 2023-06-13 US claimed
US-11647626-B2 Method for fabricating semiconductor device with tapering impurity region NANYA TECHNOLOGY CORPORATION (TW) 2023-05-09 US claimed
US-20140054648-A1 NEEDLE-SHAPED PROFILE FINFET DEVICE TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. (US) 2014-02-27 US claimed
US-20130344612-A1 ULTRASENSITIVE, SUPERFAST, AND MICROLITER-VOLUME DIFFERENTIAL SCANNING NANOCALORIMETER FOR DIRECT CHARACTIZATION OF BIOMOLECULAR INTERACTIONS THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK 2013-12-26 US claimed
US-8528405-B2 Flexure assemblies and methods for manufacturing and using the same THE CHARLES STARK DRAPER LABORATORY, INC. (US) 2013-09-10 US claimed
US-20110132088-A1 FLEXURE ASSEMBLIES AND METHODS FOR MANUFACTURING AND USING THE SAME THE CHARLES STARK DRAPER LABORATORY, INC. (US) 2011-06-09 US claimed
US-20100255661-A1 METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION APPLIED MATERIALS, INC. (US) 2010-10-07 US claimed
WO-2010102089-A2 METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION APPLIED MATERIALS, INC. (US) 2010-09-10 WO claimed
US-7358494-B1 Material composition analysis system and method KLA-TENCOR TECHNOLOGIES CORPORATION (US) 2008-04-15 US claimed
EP-0342866-B1 III-V group compounds semiconductor device Schottky contact FUJITSU LTD (JP) 1994-03-16 EP claimed
US-4929985-A Compound semiconductor device FUJITSU LIMITED (JP) 1990-05-29 US claimed
EP-0342866-A2 III-V group compounds semiconductor device Schottky contact FUJITSU LIMITED (JP) 1989-11-23 EP claimed