⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1955151 | 1.00 | — | — | |
| Strontium SCHEMBL31571129 | 0.87 | — | — | |
| SCHEMBL29350829 | 0.87 | — | — | |
| SCHEMBL30509662 | 0.87 | — | — | |
| SCHEMBL31553277 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL31083577 | 0.87 | — | — | |
| SCHEMBL30509660 | 0.87 | — | — | |
| SCHEMBL965774 | 0.82 | — | — | |
| SCHEMBL1470889 | 0.82 | — | — | |
| SCHEMBL23710 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1493 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250234525-A1 | MEMORY DEVICE INCLUDING WORD LINE STRUCTURE WITH HIGH-K GATE DIELECTRIC LAYER AND METHOD FOR PREPARING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-17 | — | — | US | claimed |
| US-20250234524-A1 | MEMORY DEVICE INCLUDING WORD LINE STRUCTURE WITH HIGH-K GATE DIELECTRIC LAYER AND METHOD FOR PREPARING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-17 | — | — | US | claimed |
| US-20240071818-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | UNITED MICROELECTRONICS CORP. (TW) | 2024-02-29 | — | — | US | claimed |
| CN-113745159-B | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2023-12-29 | — | — | CN | claimed |
| US-11854904-B2 | Different source/drain profiles for n-type FinFETs and p-type FinFETs | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-26 | — | — | US | claimed |
| EP-4278375-A1 | SELECTIVE SIGESN:B DEPOSITION | Applied Materials, Inc. (US) | 2023-11-22 | — | — | EP | claimed |
| US-11791158-B2 | Selective SIGESN:B deposition | APPLIED MATERIALS, INC. (US) | 2023-10-17 | — | — | US | claimed |
| CN-116802771-A | Selective SiGeSn: B deposition | 应用材料公司 | 2023-09-22 | — | — | CN | claimed |
| CN-113345896-B | Dynamic random access memory device and manufacturing method thereof | 华邦电子股份有限公司 | 2023-09-22 | — | — | CN | claimed |
| US-11699617-B2 | Method for fabricating semiconductor device with alleviation feature | NANYA TECHNOLOGY CORPORATION (TW) | 2023-07-11 | — | — | US | claimed |
| US-20140054648-A1 | NEEDLE-SHAPED PROFILE FINFET DEVICE | TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. (US) | 2014-02-27 | — | — | US | claimed |
| US-20130344612-A1 | ULTRASENSITIVE, SUPERFAST, AND MICROLITER-VOLUME DIFFERENTIAL SCANNING NANOCALORIMETER FOR DIRECT CHARACTIZATION OF BIOMOLECULAR INTERACTIONS | THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK | 2013-12-26 | — | — | US | claimed |
| US-8528405-B2 | Flexure assemblies and methods for manufacturing and using the same | THE CHARLES STARK DRAPER LABORATORY, INC. (US) | 2013-09-10 | — | — | US | claimed |
| US-20110132088-A1 | FLEXURE ASSEMBLIES AND METHODS FOR MANUFACTURING AND USING THE SAME | THE CHARLES STARK DRAPER LABORATORY, INC. (US) | 2011-06-09 | — | — | US | claimed |
| US-20100255661-A1 | METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION | APPLIED MATERIALS, INC. (US) | 2010-10-07 | — | — | US | claimed |
| WO-2010102089-A2 | METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION | APPLIED MATERIALS, INC. (US) | 2010-09-10 | — | — | WO | claimed |
| US-7358494-B1 | Material composition analysis system and method | KLA-TENCOR TECHNOLOGIES CORPORATION (US) | 2008-04-15 | — | — | US | claimed |
| EP-0342866-B1 | III-V group compounds semiconductor device Schottky contact | FUJITSU LTD (JP) | 1994-03-16 | — | — | EP | claimed |
| US-4929985-A | Compound semiconductor device | FUJITSU LIMITED (JP) | 1990-05-29 | — | — | US | claimed |
| EP-0342866-A2 | III-V group compounds semiconductor device Schottky contact | FUJITSU LIMITED (JP) | 1989-11-23 | — | — | EP | claimed |