Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.54 |
| ▸ | TSHR | P16473 | 2/20 | 0.54 |
| ▸ | S1PR4 | O95977 | 2/20 | 0.37 |
| ▸ | LMNA | P02545 | 2/20 | 0.37 |
| ▸ | MAPT | P10636 | 2/20 | 0.37 |
| ▸ | S1PR1 | P21453 | 2/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.37 |
| ▸ | HSD17B2 | P37059 | 1/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.34 |
| ▸ | PDK1 | Q15118 | 2/20 | 0.33 |
| ▸ | PDK2 | Q15119 | 2/20 | 0.33 |
| ▸ | PDK3 | Q15120 | 2/20 | 0.33 |
| ▸ | PDK4 | Q16654 | 2/20 | 0.33 |
| ▸ | EGFR | P00533 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.31 |
| ▸ | TP53 | P04637 | 1/20 | 0.31 |
| ▸ | NR1H2 | P55055 | 2/20 | 0.31 |
| ▸ | NR1H3 | Q13133 | 2/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Styrene SCHEMBL4917329 | 0.84 | ALDH1A1 (0.64) | ALDH1A1TSHRS1PR4LMNAMAPT | |
| Styrene SCHEMBL6322868 | 0.78 | ALDH1A1 (0.61) | ALDH1A1TSHRHSD17B2CYP3A4TDP1 | |
| Styrene SCHEMBL6314454 | 0.78 | ALDH1A1 (0.61) | ALDH1A1TSHRHSD17B2CYP3A4TDP1 | |
| Styrene SCHEMBL27864660 | 0.77 | ALDH1A1 (0.74) | ALDH1A1TSHRLMNACYP3A4TDP1 | |
| Styrene SCHEMBL5868543 | 0.76 | ALDH1A1 (0.82) | ALDH1A1TSHRLMNAMAPTCYP3A4 | |
| Styrene SCHEMBL4259704 | 0.76 | ALDH1A1 (0.93) | ALDH1A1TSHRLMNAMAPTCYP3A4 | |
| Styrene SCHEMBL3264247 | 0.76 | ALDH1A1 (0.52) | ALDH1A1TSHRS1PR4LMNAMAPT | |
| Styrene SCHEMBL28863342 | 0.74 | ALDH1A1 (0.70) | ALDH1A1TSHRLMNAMAPTCYP3A4 | |
| Styrene SCHEMBL29039096 | 0.74 | ALDH1A1 (0.70) | ALDH1A1TSHRMAPTEGFRCYP3A4 | |
| Styrene SCHEMBL9466768 | 0.74 | ALDH1A1 (0.70) | ALDH1A1TSHRMAPTEGFRCYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6794109-B2 | POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2004-09-21 | — | — | US | claimed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | claimed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | claimed |
| CN-114206015-A | Method for manufacturing a circuit-board structure | 佳胜科技股份有限公司 | 2022-03-18 | — | — | CN | disclosed |
| US-8088537-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20110305979-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-12-15 | — | — | US | disclosed |
| US-20090197200-A1 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| CN-100355023-C | Semiconductor fabrication apparatus and pattern formation method using the same | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2007-12-12 | — | — | CN | disclosed |
| US-7135273-B2 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-14 | — | — | US | disclosed |
| US-7132214-B2 | Polymers and photoresist compositions for short wavelength imaging | SHIPLEY COMPANY, L.L.C. (US) | 2006-11-07 | — | — | US | disclosed |
| US-6872504-B2 | High sensitivity X-ray photoresist | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2005-03-29 | — | — | US | disclosed |
| US-6864037-B2 | Acrylic polymer; exposure to high energy radiation; photoresist patterns | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-03-08 | — | — | US | disclosed |
| US-6794109-B2 | POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2004-09-21 | — | — | US | disclosed |
| US-20040110091-A1 | High sensitivity X-ray photoresist | MASS INSTITUTE OF TECHNOLOGY (MIT) | 2004-06-10 | — | — | US | disclosed |
| US-20030082479-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-05-01 | — | — | US | disclosed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | disclosed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | disclosed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | disclosed |
| US-20020055061-A1 | Novel polymers and photoresist compositions for short short wavelength imaging | SHIPLEY COMPANY, L.L.C. | 2002-05-09 | — | — | US | disclosed |
| WO-2002021213-A2 | NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS FOR SHORT WAVELENGTH IMAGING | SHIPLEY COMPANY, L.L.C. (US) | 2002-03-14 | — | — | WO | disclosed |