Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.38 |
| ▸ | ESR1 | P03372 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.38 |
| ▸ | PPARG | P37231 | 1/20 | 0.33 |
| ▸ | PPARA | Q07869 | 1/20 | 0.33 |
| ▸ | NR1H4 | Q96RI1 | 1/20 | 0.33 |
| ▸ | CHEK1 | O14757 | 1/20 | 0.31 |
| ▸ | FYN | P06241 | 1/20 | 0.31 |
| ▸ | PDGFRB | P09619 | 1/20 | 0.31 |
| ▸ | PIM1 | P11309 | 1/20 | 0.31 |
| ▸ | FGFR1 | P11362 | 1/20 | 0.31 |
| ▸ | FLT1 | P17948 | 1/20 | 0.31 |
| ▸ | GRK5 | P34947 | 1/20 | 0.31 |
| ▸ | MAP2K2 | P36507 | 1/20 | 0.31 |
| ▸ | MAPK8 | P45983 | 1/20 | 0.31 |
| ▸ | CDK8 | P49336 | 1/20 | 0.31 |
| ▸ | RPS6KA3 | P51812 | 1/20 | 0.31 |
| ▸ | PRKX | P51817 | 1/20 | 0.31 |
| ▸ | JAK3 | P52333 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8424942 | 0.90 | ALDH1A1 (0.36) | ALDH1A1ESR1CYP3A4ESR2NR1H4 | |
| SCHEMBL8424929 | 0.90 | ALDH1A1 (0.39) | ALDH1A1ESR1CYP3A4ESR2PPARG | |
| SCHEMBL8421766 | 0.89 | HRH2 (0.36) | ALDH1A1ESR1CYP3A4ESR2NR1H4 | |
| SCHEMBL8423112 | 0.89 | ALDH1A1 (0.37) | ALDH1A1ESR1CYP3A4ESR2NR1H4 | |
| SCHEMBL13206640 | 0.89 | ALDH1A1 (0.38) | ALDH1A1ESR1CYP3A4ESR2PPARG | |
| SCHEMBL8421784 | 0.87 | ALDH1A1 (0.39) | ALDH1A1ESR1CYP3A4ESR2NR1H4 | |
| SCHEMBL196648 | 0.86 | ALDH1A1 (0.37) | ALDH1A1ESR1CYP3A4ESR2PPARG | |
| SCHEMBL5364195 | 0.86 | ALDH1A1 (0.54) | ALDH1A1ESR1CYP3A4ESR2PPARG | |
| SCHEMBL13588060 | 0.84 | ALDH1A1 (0.47) | ALDH1A1ESR1CYP3A4ESR2NR1H4 | |
| SCHEMBL14560641 | 0.82 | ESR1 (0.45) | ALDH1A1ESR1CYP3A4ESR2NR1H4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 227 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1308782-B1 | Chemically amplified positive resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-09-05 | — | — | EP | claimed |
| US-6660447-B2 | Copolymers of fluorinated vinyl phenol units and acrylonitrile units has high transmittance to VUV radiation | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-09 | — | — | US | claimed |
| US-5856561-A | Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-01-05 | — | — | US | claimed |
| JP-9077720-A | — | — | None | — | — | JP | disclosed |
| CN-105301905-B | Chemically amplified positive resist composition and patterning method | 信越化学工业株式会社 | 2020-11-20 | — | — | CN | disclosed |
| EP-2955576-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-07-22 | — | — | EP | disclosed |
| US-9519217-B2 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-13 | — | — | US | disclosed |
| EP-2955576-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2015-12-16 | — | — | EP | disclosed |
| US-20150355543-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-10 | — | — | US | disclosed |
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2033966-B1 | Novel photoacid generators, resist compositons, and patterning processes | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-20010018162-A1 | Novel polymers, chemical amplification resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-30 | — | — | US | disclosed |
| EP-1126322-A2 | Fluorine-containing polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-22 | — | — | EP | disclosed |
| US-20010010890-A1 | Polymers, chemical amplification resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-02 | — | — | US | disclosed |
| EP-1117003-A1 | Chemical amplification type resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-07-18 | — | — | EP | disclosed |
| US-20010003772-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICDL CO., LTD. OF (JP) | 2001-06-14 | — | — | US | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| US-5856561-A | Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-01-05 | — | — | US | disclosed |
| JP-H0977720-A | TERTIARY ESTER DERIVATIVE OF BISPHENOLCARBOXYLIC ACID AND CHEMICALLY AMPLIFIED POSITIVE TYPE RESIST MATERIAL | SHIN ETSU CHEM CO LTD | 1997-03-25 | — | — | JP | disclosed |
| JP-H00977720-A | — | — | 0001-01-01 | — | — | JP | disclosed |