⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9863386 | 0.87 | — | — | |
| SCHEMBL10493686 | 0.87 | — | — | |
| SCHEMBL10456425 | 0.87 | — | — | |
| SCHEMBL10684905 | 0.87 | — | — | |
| SCHEMBL10537306 | 0.87 | — | — | |
| SCHEMBL10536839 | 0.87 | — | — | |
| Oxygen SCHEMBL206366 | 0.58 | — | — | |
| SCHEMBL25345521 | 0.50 | — | — | |
| SCHEMBL5544725 | 0.50 | — | — | |
| SCHEMBL590264 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 141 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116140302-B | Method for cleaning heavily-doped red phosphorus single crystal furnace pipeline | 山东有研半导体材料有限公司 | 2024-08-20 | — | — | CN | claimed |
| CN-117819837-A | Optical fiber for high-flexibility optical cable and preparation method thereof | 芮汉华 | 2024-04-05 | — | — | CN | claimed |
| CN-116140302-A | Method for cleaning heavily-doped red phosphorus single crystal furnace pipeline | 山东有研半导体材料有限公司 | 2023-05-23 | — | — | CN | claimed |
| CN-114421909-A | Method for optimizing FBAR cavity planarization defect, cavity type FBAR and application | 浙江大学杭州国际科创中心 | 2022-04-29 | — | — | CN | claimed |
| WO-2021213032-A1 | SEMICONDUCTOR MARK AND FORMING METHOD THEREFOR | 长鑫存储技术有限公司 (CN) | 2021-10-28 | — | — | WO | claimed |
| CN-110299416-A | Surface passivation layer structure of doping layer of solar cell and preparation method thereof | 国家电投集团西安太阳能电力有限公司 | 2019-10-01 | — | — | CN | claimed |
| US-10322942-B2 | Silicon phosphate and membrane comprising the same | UNIVERSITY COURT OF THE UNIVERSITY OF ST ANDREWS (GB) | 2019-06-18 | — | — | US | claimed |
| CN-105405899-B | N-type double-side cell and preparation method thereof | 上海大族新能源科技有限公司 | 2018-07-06 | — | — | CN | claimed |
| CN-105932075-A | Back crystal silicon heterojunction solar cell and preparation method thereof | 南昌大学 | 2016-09-07 | — | — | CN | claimed |
| CN-105810771-A | Back crystal silicon heterojunction two-sided solar cell and preparation method therefor | 南昌大学 | 2016-07-27 | — | — | CN | claimed |
| US-20120276468-A1 | SILICON PHOSPHATE AND MEMBRANE COMPRISING THE SAME | UNIVERSITY COURT OF THE UNIVERSITY OF ST ANDREWS (GB) | 2012-11-01 | — | — | US | claimed |
| EP-2509708-A1 | SILICON PHOSPHATE AND MEMBRANE COMPRISING THE SAME | The University Court of the University of St. Andrews (GB) | 2012-10-17 | — | — | EP | claimed |
| CN-101577244-B | Flattening method of interlayer medium layer and forming method of contact hole | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION (CN) | 2011-11-30 | — | — | CN | claimed |
| WO-2011070312-A1 | SILICON PHOSPHATE AND MEMBRANE COMPRISING THE SAME | UNIVERSITY COURT OF THE UNIVERSITY OF ST ANDREWS (GB) | 2011-06-16 | — | — | WO | claimed |
| CN-101577244-A | Flattening method of interlayer medium layer and forming method of contact hole | SEMICONDUCTOR MFG INT BEIJING (CN) | 2009-11-11 | — | — | CN | claimed |
| CN-1149661-C | Method for manufacturing cylindrical stacked electrode | �����ɷ� | 2004-05-12 | — | — | CN | claimed |
| US-6001415-A | Via with barrier layer for impeding diffusion of conductive material from via into insulator | ADVANCED MICRO DEVICES, INC. (US) | 1999-12-14 | — | — | US | claimed |
| CN-1230781-A | Method for manufacturing cylindrical stacked electrode | NEC CORP (JP) | 1999-10-06 | — | — | CN | claimed |
| US-5311061-A | Alignment key for a semiconductor device having a seal against ionic contamination | MOTOROLA INC. (US) | 1994-05-10 | — | — | US | claimed |
| US-5188986-A | Hydrogen peroxide in basic solution to clean polycrystalline silicon after phosphorous diffusion | UNITED MICROELECTRONICS CORPORATION (TW) | 1993-02-23 | — | — | US | claimed |