⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1253872 | 0.98 | — | — | |
| SCHEMBL30449321 | 0.91 | CYP1A1 (0.34) | — | |
| SCHEMBL591209 | 0.87 | — | — | |
| SCHEMBL7475288 | 0.87 | DPP4 (0.46) | — | |
| SCHEMBL11904053 | 0.85 | — | — | |
| SCHEMBL1145183 | 0.85 | DPP4 (0.43) | — | |
| SCHEMBL590270 | 0.84 | CYP2E1 (0.40) | — | |
| SCHEMBL5571065 | 0.84 | POLB (0.32) | — | |
| SCHEMBL28608365 | 0.81 | TLR8 (0.32) | — | |
| SCHEMBL4846145 | 0.81 | APP (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114181378-A | Triaryl boron conjugated polymer porous material and preparation method and application thereof | 上海科技大学 | 2022-03-15 | — | — | CN | disclosed |
| US-20110152541-A1 | INDUCING LAYER MATERIALS FOR WEAK EPITAXIAL FILMS OF NON-PLANAR METAL PHTHALOCYANINE | SHANGHAI CASAIL DISPLAY TECHNOLOGY LTD. (CN) | 2011-06-23 | — | — | US | disclosed |
| US-7276395-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2007-10-02 | — | — | US | disclosed |
| EP-1654248-A1 | ACENE-THIOPHENE SEMICONDUCTORS | 3M Innovative Properties Company (US) | 2006-05-10 | — | — | EP | disclosed |
| US-20060033086-A1 | Depositing a gate electrode material on the substrate;depositing a gate dielectric on the gate electrode material;depositing an organic semiconductor layer comprising acene-thiophene compounds, providing a source electrode and a drain electrode contiguous to the organic semiconductor layer | GERLACH CHRISTOPHER P | 2006-02-16 | — | — | US | disclosed |
| US-6998068-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2006-02-14 | — | — | US | disclosed |
| WO-2005019198-A1 | ACENE-THIOPHENE SEMICONDUCTORS | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2005-03-03 | — | — | WO | disclosed |