SCHEMBL19935690

SCHEMBL19935690

C=Cc1ccc(Oc2ccc(C=C)c(/C=C\C)c2)cc1/C=C\C

nearest known ligand 0.35

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 2/20 0.35
LMNA P02545 1/20 0.35
TP53 P04637 1/20 0.35
TSHR P16473 1/20 0.35
KDM4E B2RXH2 1/20 0.35
ALDH1A1 P00352 1/20 0.35
HMGCR P04035 1/20 0.34
CYP1A1 P04798 3/20 0.33
CYP1A2 P05177 3/20 0.33
CYP1B1 Q16678 3/20 0.33
NFE2L2 Q16236 1/20 0.33
NR4A1 P22736 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21187529 0.90 CYP1A2 (0.42) LMNAKDM4EALDH1A1CYP1A2
SCHEMBL19935764 0.90 CYP3A4 (0.33) CYP3A4LMNATP53TSHRKDM4E
SCHEMBL27238978 0.83 NR4A1 (0.37) CYP3A4LMNATP53TSHRALDH1A1
SCHEMBL18648076 0.83 CYP1A2 (0.42) LMNAKDM4EALDH1A1CYP1A2
SCHEMBL24862125 0.79 CYP1A2 (0.48) CYP3A4LMNATP53TSHRKDM4E
SCHEMBL22376494 0.76 TP53 (0.38) CYP3A4LMNATP53KDM4EALDH1A1
SCHEMBL14985583 0.74 LMNA (0.33) CYP3A4LMNAKDM4EALDH1A1HMGCR
SCHEMBL13783157 0.74 ERN1 (0.34) CYP3A4HMGCR
SCHEMBL17031526 0.74 TDP1 (0.36) CYP3A4ALDH1A1HMGCR
SCHEMBL18896546 0.74 HMGCR (0.39) CYP3A4HMGCR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10577323-B2 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-03-03 US disclosed
US-10364314-B2 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-07-30 US disclosed
US-20180208703-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, CIRCUIT PATTERN FORMING METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-07-26 US disclosed
US-20180065930-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10577323-B2 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin TXNL1, RER1, LAS1L CYP3A4 2588/4885LMNA 1361/4885TP53 4641/4885
US-10364314-B2 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method TXNL1, RER1, MLLT1 CYP3A4 2993/4885LMNA 1075/4885TP53 4576/4885
US-20180208703-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, CIRCUIT PATTERN FORMING METHOD, AND PURIFICATION METHOD TXNL1, RER1, MLLT1 CYP3A4 3023/4885LMNA 1045/4885TP53 4555/4885
US-20180065930-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN TXNL1, RER1, LAS1L CYP3A4 2588/4885LMNA 1361/4885TP53 4641/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.