Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH3 | Q9Y5N1 | 12/20 | 0.51 |
| ▸ | KCNH2 | Q12809 | 4/20 | 0.51 |
| ▸ | CYP2C9 | P11712 | 4/20 | 0.43 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.41 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.38 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | RAB9A | P51151 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14461652 | 0.87 | HRH3 (0.50) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL10274540 | 0.87 | HRH3 (0.55) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL18473497 | 0.87 | HRH3 (0.50) | HRH3KCNH2CYP2C9CYP3A4RAB9A | |
| SCHEMBL14443349 | 0.85 | HRH3 (0.52) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL10228460 | 0.84 | HRH3 (0.52) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL14667598 | 0.84 | HRH3 (0.47) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL14129094 | 0.84 | HRH3 (0.47) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL16590942 | 0.84 | HRH3 (0.47) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL14094045 | 0.84 | HRH3 (0.50) | HRH3KCNH2CYP2C9CYP3A4KDM4E | |
| SCHEMBL14118168 | 0.83 | HRH3 (0.49) | HRH3KCNH2CYP2C9CYP3A4KDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220144738-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-05-12 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-12 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-21 | — | — | US | disclosed |
| US-20190041750-A1 | MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-07 | — | — | US | disclosed |
| US-20180074406-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | HRH3 2099/4885KCNH2 3502/4885CYP2C9 2117/4885 |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C5, C1R | HRH3 43/4885KCNH2 513/4885CYP2C9 636/4885 |
| US-20180074406-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | RDX, SLC11A2, FBL | HRH3 2099/4885KCNH2 3502/4885CYP2C9 2117/4885 |
| US-20190041750-A1 | MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD | MLLT1, JMJD6, DOT1L | HRH3 1078/4885KCNH2 529/4885CYP2C9 1547/4885 |
| US-20220144738-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN | RER1, UNC119, FEM1B | HRH3 3331/4885KCNH2 1999/4885CYP2C9 2469/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | HRH3 43/4885KCNH2 513/4885CYP2C9 636/4885 |
| US-11143962-B2 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method | MLLT1, MLLT3, KDM2B | HRH3 987/4885KCNH2 463/4885CYP2C9 1811/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | HRH3 38/4885KCNH2 2696/4885CYP2C9 688/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.