SCHEMBL19968145

SCHEMBL19968145

CCCOCCOc1ccc(C2CCCCC2)cc1

nearest known ligand 0.60

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 12/20 0.55
KCNH2 Q12809 4/20 0.55
CYP2C9 P11712 4/20 0.48
CYP1A2 P05177 1/20 0.48
CYP2D6 P10635 1/20 0.48
CYP2C19 P33261 1/20 0.48
CYP3A4 P08684 3/20 0.44
RAB9A P51151 1/20 0.43
MAPT P10636 2/20 0.42
ALDH1A1 P00352 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
ALOX15 P16050 1/20 0.41
TSHR P16473 1/20 0.41
MAPK1 P28482 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14318440 0.90 HRH3 (0.60) HRH3KCNH2CYP2C9CYP1A2CYP2D6
SCHEMBL10274532 0.89 HRH3 (0.56) HRH3KCNH2CYP2C9CYP1A2CYP2D6
SCHEMBL28826979 0.87 HRH3 (0.65) HRH3KCNH2CYP2C9CYP1A2CYP2D6
SCHEMBL11329684 0.84 HRH3 (0.55) HRH3KCNH2CYP2C9CYP3A4RAB9A
SCHEMBL10770845 0.83 HRH3 (0.60) HRH3KCNH2CYP2C9CYP3A4RAB9A
SCHEMBL19901974 0.83 HRH3 (0.56) HRH3KCNH2CYP2C9CYP3A4MAPT
SCHEMBL10228452 0.82 HRH3 (0.52) HRH3KCNH2CYP2C9CYP3A4ALDH1A1
SCHEMBL21249179 0.81 HRH3 (0.49) HRH3KCNH2CYP2C9CYP1A2CYP2D6
SCHEMBL9808038 0.81 HRH3 (0.71) HRH3KCNH2CYP2C9CYP3A4
SCHEMBL11099961 0.81 HRH3 (0.51) HRH3KCNH2CYP2C9CYP1A2CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-22 US disclosed
US-20180074406-A1 COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 HRH3 3323/4885KCNH2 2235/4885CYP2C9 2626/4885
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it RDX, SLC11A2, FBL HRH3 2099/4885KCNH2 3502/4885CYP2C9 2117/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R HRH3 43/4885KCNH2 513/4885CYP2C9 636/4885
US-20180074406-A1 COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT RDX, SLC11A2, FBL HRH3 2099/4885KCNH2 3502/4885CYP2C9 2117/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.