⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4821036 | 0.71 | — | — | |
| SCHEMBL9242596 | 0.59 | — | — | |
| SCHEMBL9507834 | 0.59 | — | — | |
| SCHEMBL8979649 | 0.59 | — | — | |
| SCHEMBL2102742 | 0.59 | — | — | |
| SCHEMBL8597698 | 0.56 | — | — | |
| SCHEMBL5442827 | 0.53 | ALDH1A1 (0.43) | — | |
| SCHEMBL20461 | 0.53 | — | — | |
| SCHEMBL30576311 | 0.50 | — | — | |
| Charcoal, Activated SCHEMBL6544903 | 0.47 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2025226985-A1 | PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-10-30 | — | — | WO | claimed |
| WO-2025076009-A1 | SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS UTILIZING ORGANOAMINOPOLYSILOXANES AND ORGANOAMINOPOLYSILAZANES | VERSUM MATERIALS US, LLC (US) | 2025-04-10 | — | — | WO | claimed |
| US-20220119947-A1 | CHLORODISILAZANES | DOW SILICONES CORP (US) | 2022-04-21 | — | — | US | claimed |
| CN-112969817-A | High temperature atomic layer deposition of silicon-containing films | 弗萨姆材料美国有限责任公司 | 2021-06-15 | — | — | CN | claimed |
| EP-3663260-A1 | PREPARING A SILICON-HETEROATOM COMPOUND USING CHLORODISILAZANES | Dow Silicones Corporation (US) | 2020-06-10 | — | — | EP | claimed |
| US-20190309416-A1 | CHLORODISILAZANES | DOW SILICONES CORP (US) | 2019-10-10 | — | — | US | claimed |
| US-20260130139-A1 | LOW TEMPERATURE SI-CONTAINING FILMS DEPOSITED FROM CHLOROSILANE AND AMINOSILANE REACTIONS | VERSUM MAT US LLC (US) | 2026-05-07 | — | — | US | disclosed |
| WO-2025226985-A1 | PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-10-30 | — | — | WO | disclosed |
| US-12368042-B2 | Precursors and processes for deposition of Si-containing films using ALD at temperature of 550° C. or higher | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2025-07-22 | — | — | US | disclosed |
| WO-2025080587-A2 | SILICON-CONTAINING FILMS HAVING SURFACES MODIFIED FROM HALOGENATED SILICON-CONTAINING COMPOUNDS | VERSUM MATERIALS US, LLC (US) | 2025-04-17 | — | — | WO | disclosed |
| WO-2025076009-A1 | SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS UTILIZING ORGANOAMINOPOLYSILOXANES AND ORGANOAMINOPOLYSILAZANES | VERSUM MATERIALS US, LLC (US) | 2025-04-10 | — | — | WO | disclosed |
| WO-2024081357-A1 | LOW TEMPERATURE SI-CONTAINING FILMS DEPOSITED FROM CHLOROSILANE AND AMINOSILANE REACTIONS | VERSUM MATERIALS US, LLC (US) | 2024-04-18 | — | — | WO | disclosed |
| CN-115287070-B | Inorganic high selectivity etching solution for stabilizing silicon nitride etching rate | 湖北兴福电子材料股份有限公司 | 2024-03-12 | — | — | CN | disclosed |
| EP-3663260-A1 | PREPARING A SILICON-HETEROATOM COMPOUND USING CHLORODISILAZANES | Dow Silicones Corporation (US) | 2020-06-10 | — | — | EP | disclosed |
| EP-3562781-A1 | TRANSSILYLATION CATALYSIS | Dow Silicones Corporation (US) | 2019-11-06 | — | — | EP | disclosed |
| US-20190309416-A1 | CHLORODISILAZANES | DOW SILICONES CORP (US) | 2019-10-10 | — | — | US | disclosed |
| EP-3519353-A1 | CHLORODISILAZANES | Dow Silicones Corporation (US) | 2019-08-07 | — | — | EP | disclosed |
| WO-2018125476-A1 | TRANSSILYLATION CATALYSIS | DOW SILICONES CORPORATION (US) | 2018-07-05 | — | — | WO | disclosed |
| US-9991112-B2 | Method for forming dielectric film and method for fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-06-05 | — | — | US | disclosed |
| US-20180090313-A1 | METHOD FOR FORMING DIELECTRIC FILM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-03-29 | — | — | US | disclosed |