⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17891766 | 0.87 | — | — | |
| SCHEMBL33671 | 0.82 | — | — | |
| SCHEMBL80291 | 0.82 | — | — | |
| SCHEMBL490980 | 0.67 | — | — | |
| SCHEMBL19056832 | 0.67 | — | — | |
| SCHEMBL7453548 | 0.67 | — | — | |
| SCHEMBL5868592 | 0.67 | — | — | |
| SCHEMBL16632080 | 0.67 | — | — | |
| SCHEMBL237963 | 0.67 | — | — | |
| SCHEMBL2388217 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 111 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112470257-B | Method for forming a crystallographically stable ferroelectric hafnium zirconium-based film for semiconductor devices | 东京毅力科创株式会社 | 2024-03-29 | — | — | CN | claimed |
| US-20230278868-A1 | A CORAL-LIKE COMPOSITE MATERIAL AND A METHOD OF PREPARING THE SAME | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) | 2023-09-07 | — | — | US | claimed |
| CN-112470257-A | Method of forming crystallographically stable ferroelectric hafnium zirconium based films for semiconductor devices | 东京毅力科创株式会社 | 2021-03-09 | — | — | CN | claimed |
| US-10790149-B2 | Method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devices | TOKYO ELECTRON LIMITED (JP) | 2020-09-29 | — | — | US | claimed |
| WO-2020023837-A1 | METHOD OF FORMING CRYSTALLOGRAPHICALLY STABILIZED FERROELECTRIC HAFNIUM ZIRCONIUM BASED FILMS FOR SEMICONDUCTOR DEVICES | TOKYO ELECTRON LIMITED (JP) | 2020-01-30 | — | — | WO | claimed |
| US-20200035493-A1 | METHOD OF FORMING CRYSTALLOGRAPHICALLY STABILIZED FERROELECTRIC HAFNIUM ZIRCONIUM BASED FILMS FOR SEMICONDUCTOR DEVICES | TOKYO ELECTRON LIMITED (JP) | 2020-01-30 | — | — | US | claimed |
| EP-2191034-B1 | METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING MONOCYCLOPENTADIENYL TRIAMINO ZIRCONIUM PRECURSORS | SIGMA ALDRICH CO LLC (US) | 2013-03-13 | — | — | EP | claimed |
| US-7755128-B2 | Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials | TOKYO ELECTRON LIMITED (JP) | 2010-07-13 | — | — | US | claimed |
| US-20080230854-A1 | SEMICONDUCTOR DEVICE CONTAINING CRYSTALLOGRAPHICALLY STABILIZED DOPED HAFNIUM ZIRCONIUM BASED MATERIALS | TOKYO ELECTRON LIMITED (JP) | 2008-09-25 | — | — | US | claimed |
| CN-118139832-A | Cubic boron nitride sintered body | 住友电气工业株式会社 | 2024-06-04 | — | — | CN | disclosed |
| US-20240174576-A1 | CUBIC BORON NITRIDE SINTERED MATERIAL | SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) | 2024-05-30 | — | — | US | disclosed |
| EP-4079703-B1 | CUBIC BORON NITRIDE SINTERED MATERIAL | SUMITOMO ELECTRIC INDUSTRIES (JP) | 2024-05-01 | — | — | EP | disclosed |
| CN-117957208-A | Cubic boron nitride sintered body | 住友电工硬质合金株式会社 | 2024-04-30 | — | — | CN | disclosed |
| US-11958782-B2 | Cubic boron nitride sintered material | SUMITOMO ELECTRIC HARDMETAL CORP. (JP) | 2024-04-16 | — | — | US | disclosed |
| US-20090163012-A1 | METHOD OF FORMING HIGH-DIELECTRIC CONSTANT FILMS FOR SEMICONDUCTOR DEVICES | TOKYO ELECTRON LIMITED (JP) | 2009-06-25 | — | — | US | disclosed |
| US-20090081385-A1 | METHODS OF ATOMIC LAYER DEPOSITION USING HAFNIUM AND ZIRCONIUM-BASED PRECURSORS | IROBOT CORPORATION | 2009-03-26 | — | — | US | disclosed |
| WO-2009036046-A1 | METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING MONOCYCLOPENTADIENYL TRIALKOXY HAFNIUM AND ZIRCONIUM PRECURSORS | SIGMA-ALDRICH CO. (US) | 2009-03-19 | — | — | WO | disclosed |
| US-20080233288-A1 | METHOD OF FORMING CRYSTALLOGRAPHICALLY STABILIZED DOPED HAFNIUM ZIRCONIUM BASED FILMS | TOKYO ELECTRON LIMITED (JP) | 2008-09-25 | — | — | US | disclosed |
| US-20080230854-A1 | SEMICONDUCTOR DEVICE CONTAINING CRYSTALLOGRAPHICALLY STABILIZED DOPED HAFNIUM ZIRCONIUM BASED MATERIALS | TOKYO ELECTRON LIMITED (JP) | 2008-09-25 | — | — | US | disclosed |
| US-20080230854-A1 | SEMICONDUCTOR DEVICE CONTAINING CRYSTALLOGRAPHICALLY STABILIZED DOPED HAFNIUM ZIRCONIUM BASED MATERIALS | TOKYO ELECTRON LIMITED (JP) | 2008-09-25 | — | — | US | disclosed |