SCHEMBL16632080

SCHEMBL16632080

[Mo+6].[Mo+6].[Mo+6].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[Zr+4].[Zr+4].[Zr+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL33671 0.82
SCHEMBL8844858 0.82
SCHEMBL35987 0.82
Lithium Ion SCHEMBL6890378 0.67
SCHEMBL16632139 0.67
SCHEMBL16874147 0.67
SCHEMBL5868592 0.67
SCHEMBL7453548 0.67
SCHEMBL259182 0.67
SCHEMBL2004803 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 73 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230278868-A1 A CORAL-LIKE COMPOSITE MATERIAL AND A METHOD OF PREPARING THE SAME AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) 2023-09-07 US claimed
CN-111848354-B Preparation method of trimethylolpropane 万华化学集团股份有限公司 2022-08-05 CN claimed
CN-111848354-A Preparation method of trimethylolpropane 万华化学集团股份有限公司 2020-10-30 CN claimed
US-9466660-B2 Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures MICRON TECHNOLOGY, INC. (US) 2016-10-11 US claimed
US-9263539-B2 Thin-film transistor and fabrication method thereof, array substrate and display device BOE TECHNOLOGY GROUP CO., LTD (CN) 2016-02-16 US claimed
US-20150194498-A1 THIN-FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE BOE TECHNOLOGY GROUP CO., LTD. (CN) 2015-07-09 US claimed
WO-2015057508-A1 SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM OXYNITRIDE OR MOLYBDENUM-BASED ALLOY MATERIAL, AND METHOD OF MAKING SUCH STRUCTURES MICRON TECHNOLOGY, INC. (US) 2015-04-23 WO claimed
US-20150102460-A1 SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM OXYNITRIDE OR MOLYBDENUM-BASED ALLOY MATERIAL, AND METHOD OF MAKING SUCH STRUCTURES MICRON TECHNOLOGY, INC. (US) 2015-04-16 US claimed
CN-118139832-A Cubic boron nitride sintered body 住友电气工业株式会社 2024-06-04 CN disclosed
US-20240174576-A1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2024-05-30 US disclosed
EP-4079703-B1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC INDUSTRIES (JP) 2024-05-01 EP disclosed
EP-4079705-B1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC INDUSTRIES (JP) 2024-05-01 EP disclosed
CN-117957208-A Cubic boron nitride sintered body 住友电工硬质合金株式会社 2024-04-30 CN disclosed
US-11958782-B2 Cubic boron nitride sintered material SUMITOMO ELECTRIC HARDMETAL CORP. (JP) 2024-04-16 US disclosed
US-20180297899-A1 SINTERED MATERIAL, TOOL INCLUDING SINTERED MATERIAL, AND SINTERED MATERIAL PRODUCTION METHOD SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2018-10-18 US disclosed
US-10029948-B2 Sintered material, tool including sintered material, and sintered material production method SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2018-07-24 US disclosed
US-20170253531-A1 SINTERED MATERIAL, TOOL INCLUDING SINTERED MATERIAL, AND SINTERED MATERIAL PRODUCTION METHOD SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2017-09-07 US disclosed
EP-3187476-A1 SINTERED BODY, TOOL USING SINTERED BODY, AND SINTERED BODY PRODUCTION METHOD Sumitomo Electric Industries, Ltd. (JP) 2017-07-05 EP disclosed
US-9263539-B2 Thin-film transistor and fabrication method thereof, array substrate and display device BOE TECHNOLOGY GROUP CO., LTD (CN) 2016-02-16 US disclosed
US-20150194498-A1 THIN-FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE BOE TECHNOLOGY GROUP CO., LTD. (CN) 2015-07-09 US disclosed