⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2030926 | 1.00 | — | — | |
| SCHEMBL379794 | 1.00 | — | — | |
| SCHEMBL7104338 | 0.87 | — | — | |
| SCHEMBL4918399 | 0.87 | — | — | |
| SCHEMBL7600553 | 0.87 | — | — | |
| SCHEMBL9130772 | 0.87 | — | — | |
| SCHEMBL5615282 | 0.87 | — | — | |
| SCHEMBL33275 | 0.82 | — | — | |
| SCHEMBL3467470 | 0.82 | — | — | |
| SCHEMBL2443636 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 117 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112602191-B | Capacitor and manufacturing method thereof | 深圳市汇顶科技股份有限公司 | 2022-12-23 | — | — | CN | claimed |
| CN-112928116-A | Ferroelectric memory | 财团法人工业技术研究院 | 2021-06-08 | — | — | CN | claimed |
| CN-112602191-A | Capacitor and manufacturing method thereof | 深圳市汇顶科技股份有限公司 | 2021-04-02 | — | — | CN | claimed |
| CN-102800631-B | Method for forming complementary metal oxide semiconductor (CMOS) transistor | SEMICONDUCTOR MFG INT SHANGHAI | 2014-09-03 | — | — | CN | claimed |
| CN-102800631-A | Method for forming complementary metal oxide semiconductor (CMOS) transistor | SEMICONDUCTOR MFG INT SHANGHAI | 2012-11-28 | — | — | CN | claimed |
| CN-100456513-C | Phase changeable memory cells and methods of forming the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-01-28 | — | — | CN | claimed |
| CN-1272857-C | Grid structure with independently made vertical doped distributions | IBM (US) | 2006-08-30 | — | — | CN | claimed |
| CN-1808736-A | Phase changeable memory cells and methods of forming the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2006-07-26 | — | — | CN | claimed |
| CN-1503374-A | Grid structure with independently made vertical doped distributions | �Ҵ���˾ | 2004-06-09 | — | — | CN | claimed |
| JP-10284440-A | — | — | None | — | — | JP | disclosed |
| US-20240162382-A1 | LIGHT-EMITTING PACKAGE AND LIGHT-EMITTING ELEMENT | EPISTAR CORPORATION (TW) | 2024-05-16 | — | — | US | disclosed |
| EP-4113626-A1 | GATE-ALL-AROUND TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE | Huawei Technologies Co., Ltd. (CN) | 2023-01-04 | — | — | EP | disclosed |
| CN-112602191-B | Capacitor and manufacturing method thereof | 深圳市汇顶科技股份有限公司 | 2022-12-23 | — | — | CN | disclosed |
| US-20220406907-A1 | METALLIC SEALANTS IN TRANSISTOR ARRANGEMENTS | INTEL CORPORATION (US) | 2022-12-22 | — | — | US | disclosed |
| US-20030155585-A1 | Semiconductor device and liquid jet apparatus using the same | CANON KABUSHIKI KAISHA (JP) | 2003-08-21 | — | — | US | disclosed |
| US-20020125511-A1 | Semiconductor device, method of manufacturing the same and liquid jet apparatus | CANON KABUSHIKI KAISHA (JP) | 2002-09-12 | — | — | US | disclosed |
| EP-1233452-A2 | Semiconductor device, method of manufacturing the same and liquid jet apparatus | CANON KABUSHIKI KAISHA (JP) | 2002-08-21 | — | — | EP | disclosed |
| JP-2000260959-A | IRIDIUM CONDUCTIVE ELECTRODE/BARRIER STRUCTURE AND FORMATION THEREOF | SHARP CORP | 2000-09-22 | — | — | JP | disclosed |
| JP-2000091341-A | PROCESSING FOR COPPER-BONDED PAD | TEXAS INSTR INC <TI> | 2000-03-31 | — | — | JP | disclosed |
| JP-H10284440-A | MANUFACTURE OF SEMICONDUCTOR DEVICE | MOTOROLA INC | 1998-10-23 | — | — | JP | disclosed |