⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2006296 | 1.00 | — | — | |
| SCHEMBL2030926 | 1.00 | — | — | |
| SCHEMBL7104338 | 0.87 | — | — | |
| SCHEMBL4918399 | 0.87 | — | — | |
| SCHEMBL7600553 | 0.87 | — | — | |
| SCHEMBL9130772 | 0.87 | — | — | |
| SCHEMBL5615282 | 0.87 | — | — | |
| SCHEMBL33275 | 0.82 | — | — | |
| SCHEMBL3467470 | 0.82 | — | — | |
| SCHEMBL2443636 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 325 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20190305218-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2019-10-03 | — | — | US | claimed |
| US-7919409-B2 | Materials for adhesion enhancement of copper film on diffusion barriers | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2011-04-05 | — | — | US | claimed |
| US-20100038785-A1 | Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-02-18 | — | — | US | claimed |
| EP-2154717-A2 | Materials for adhesion enhancement of copper film on diffusion barriers | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-02-17 | — | — | EP | claimed |
| US-20080225088-A1 | Fluid jet device and method for manufacturing the same | QISDA CORPORATION (TW) | 2008-09-18 | — | — | US | claimed |
| US-7402514-B2 | Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer | TEXAS INSTRUMENTS INCORPORATED (US) | 2008-07-22 | — | — | US | claimed |
| EP-0869544-B1 | Method for depositing a diffusion barrier | FREESCALE SEMICONDUCTOR INC (US) | 2006-01-11 | — | — | EP | claimed |
| US-6784049-B2 | Method for forming refractory metal oxide layers with tetramethyldisiloxane | MICRON TECHNOLOGY, INC. | 2004-08-31 | — | — | US | claimed |
| US-20040043633-A1 | Systems and methods for forming refractory metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2004-03-04 | — | — | US | claimed |
| US-6508561-B1 | Optical mirror coatings for high-temperature diffusion barriers and mirror shaping | ANALOG DEVICES, INC. | 2003-01-21 | — | — | US | claimed |
| US-20020014646-A1 | Integrated circuit capacitor | TSU ROBERT (US) | 2002-02-07 | — | — | US | claimed |
| US-6225204-B1 | Method for preventing poisoned vias and trenches | UNITED MICROELECTRONICS CORP. (TW) | 2001-05-01 | — | — | US | claimed |
| US-6071806-A | Method for preventing poisoned vias and trenches | UNITED MICROELECTRONICS CORP. (TW) | 2000-06-06 | — | — | US | claimed |
| US-6013581-A | Method for preventing poisoned vias and trenches | UNITED MICROELECTRONICS CORP. (TW) | 2000-01-11 | — | — | US | claimed |
| EP-0936667-A1 | Lattice matched barrier for dual doped polysilicon gates | LUCENT TECHNOLOGIES INC. (US) | 1999-08-18 | — | — | EP | claimed |
| EP-0869544-A2 | Method for depositing a diffusion barrier | MOTOROLA, INC. (US) | 1998-10-07 | — | — | EP | claimed |
| EP-0856879-A1 | Method for fabricating a semiconductor memory capacitor | TEXAS INSTRUMENTS INCORPORATED (US) | 1998-08-05 | — | — | EP | claimed |
| US-5135878-A | Diffusion barrier of TA-SI-N; reliability | SOLID STATE DEVICES, INC. (US) | 1992-08-04 | — | — | US | claimed |
| US-5066615-A | Integrated Circuits | AT&T BELL LABORATORIES (US) | 1991-11-19 | — | — | US | claimed |
| US-20240222447-A1 | GATE CUT, AND SOURCE AND DRAIN CONTACTS | INTEL CORPORATION (US) | 2024-07-04 | — | — | US | disclosed |
| EP-4394857-A1 | GATE CUT, AND SOURCE AND DRAIN CONTACTS | INTEL Corporation (US) | 2024-07-03 | — | — | EP | disclosed |
| US-11991937-B2 | Semiconductor device and method for manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2024-05-21 | — | — | US | disclosed |
| US-20240113177-A1 | STACKED SOURCE OR DRAIN CONTACT FLYOVER | INTEL CORPORATION (US) | 2024-04-04 | — | — | US | disclosed |
| EP-4336554-A1 | DOUBLE-DECKED INTERCONNECT FEATURES | Intel Corporation (US) | 2024-03-13 | — | — | EP | disclosed |
| US-20240071913-A1 | DOUBLE-DECKED INTERCONNECT FEATURES | INTEL CORPORATION (US) | 2024-02-29 | — | — | US | disclosed |
| US-11901226-B2 | Method for forming an interconnect structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-02-13 | — | — | US | disclosed |
| US-20240006415-A1 | DEVICE, METHOD AND SYSTEM TO PROVIDE AN INTERCONNECT BETWEEN CHANNEL STRUCTURES | INTEL CORPORATION (US) | 2024-01-04 | — | — | US | disclosed |
| US-20230290722-A1 | PUNCH-THROUGH INTERCONNECT FEATURE TO COUPLE UPPER ELECTRODES OF CAPACITORS OF MULTI-LEVEL MEMORY ARRAYS | INTEL CORPORATION (US) | 2023-09-14 | — | — | US | disclosed |
| US-20230290726-A1 | SPACER-BASED SELF-ALIGNED INTERCONNECT FEATURES | INTEL CORPORATION (US) | 2023-09-14 | — | — | US | disclosed |
| US-20230282574-A1 | INTERCONNECT FEATURE CONTACTED WITHIN A RECESS | INTEL CORPORATION (US) | 2023-09-07 | — | — | US | disclosed |
| US-20230282575-A1 | SELF-ALIGNED INTERCONNECT FEATURES FOR TRANSISTOR CONTACTS | INTEL CORPORATION (US) | 2023-09-07 | — | — | US | disclosed |
| US-20230282573-A1 | INTERCONNECT FEATURE WITH NARROW TOP SECTION AND WIDE BOTTOM SECTION | INTEL CORPORATION (US) | 2023-09-07 | — | — | US | disclosed |
| EP-4239662-A1 | INTERCONNECT FEATURE CONTACTED WITHIN A RECESS | Intel Corporation (US) | 2023-09-06 | — | — | EP | disclosed |
| EP-4239663-A1 | SELF-ALIGNED INTERCONNECT FEATURES FOR TRANSISTOR CONTACTS | Intel Corporation (US) | 2023-09-06 | — | — | EP | disclosed |
| US-20230230919-A1 | METAL SPACERS WITH HARD MASKS FORMED USING A SUBTRACTIVE PROCESS | INTEL CORPORATION (US) | 2023-07-20 | — | — | US | disclosed |
| EP-4203023-A1 | CONDUCTIVE FEATURES FORMED USING METAL ASSISTED ETCH | INTEL Corporation (US) | 2023-06-28 | — | — | EP | disclosed |
| CN-116314117-A | Backside power delivery and signaling | 英特尔公司 | 2023-06-23 | — | — | CN | disclosed |
| CN-116314119-A | Alternate deep via and buried or backside power rail with backside interconnect structure | 英特尔公司 | 2023-06-23 | — | — | CN | disclosed |
| US-20230197568-A1 | CONDUCTIVE FEATURES FORMED USING METAL ASSISTED ETCH | INTEL CORPORATION (US) | 2023-06-22 | — | — | US | disclosed |
| US-20230197614-A1 | REPLACEMENT DEEP VIA AND BURIED OR BACKSIDE POWER RAIL WITH BACKSIDE INTERCONNECT STRUCTURE | INTEL CORPORATION (US) | 2023-06-22 | — | — | US | disclosed |
| US-20230197613-A1 | REPLACEMENT VIA AND BURIED OR BACKSIDE POWER RAIL | INTEL CORPORATION (US) | 2023-06-22 | — | — | US | disclosed |
| US-20230197612-A1 | BACKSIDE POWER DELIVERY NETWORK AND SIGNAL ROUTING | INTEL CORPORATION (US) | 2023-06-22 | — | — | US | disclosed |
| EP-4199079-A1 | BACKSIDE POWER DELIVERY NETWORK AND SIGNAL ROUTING | INTEL Corporation (US) | 2023-06-21 | — | — | EP | disclosed |
| EP-4199067-A1 | REPLACEMENT VIA AND BURIED OR BACKSIDE POWER RAIL | INTEL Corporation (US) | 2023-06-21 | — | — | EP | disclosed |
| EP-4199054-A2 | REPLACEMENT DEEP VIA AND BURIED OR BACKSIDE POWER RAIL WITH BACKSIDE INTERCONNECT STRUCTURE | INTEL Corporation (US) | 2023-06-21 | — | — | EP | disclosed |
| US-20230187273-A1 | ETCH STOP LAYER FOR BACKSIDE PROCESSING ARCHITECTURE | INTEL CORPORATION (US) | 2023-06-15 | — | — | US | disclosed |
| US-20230163024-A1 | REPLACEMENT CONDUCTIVE MATERIAL FOR INTERCONNECT FEATURES | INTEL CORPORATION (US) | 2023-05-25 | — | — | US | disclosed |
| EP-4184556-A1 | INVERTED DUAL DAMASCENE OPENINGS FOR INTERCONNECTS | INTEL Corporation (US) | 2023-05-24 | — | — | EP | disclosed |
| US-20230062897-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-03-02 | — | — | US | disclosed |
| US-11437573-B2 | Semiconductor device and method for manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2022-09-06 | — | — | US | disclosed |
| US-11355182-B2 | Array power supply-based screening of static random access memory cells for bias temperature instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2022-06-07 | — | — | US | disclosed |
| US-20210313227-A1 | METHOD FOR FORMING AN INTERCONNECT STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-10-07 | — | — | US | disclosed |
| US-11110719-B2 | Liquid discharge head | CANON KABUSHIKI KAISHA (JP) | 2021-09-07 | — | — | US | disclosed |
| US-20210237437-A1 | RECORDING APPARATUS AND DETERMINATION METHOD | CANON KABUSHIKI KAISHA (JP) | 2021-08-05 | — | — | US | disclosed |
| US-11069570-B2 | Method for forming an interconnect structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-07-20 | — | — | US | disclosed |
| US-10879133-B2 | Replacement metal gate process for CMOS integrated circuits | TEXAS INSTRUMENTS INCORPORATED (US) | 2020-12-29 | — | — | US | disclosed |
| US-20200316956-A1 | LIQUID DISCHARGE HEAD | CANON KABUSHIKI KAISHA (JP) | 2020-10-08 | — | — | US | disclosed |
| US-10744771-B2 | Method of manufacturing liquid ejection head and method of manufacturing structure | CANON KABUSHIKI KAISHA (JP) | 2020-08-18 | — | — | US | disclosed |
| US-20200135555-A1 | METHOD FOR FORMING AN INTERCONNECT STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-04-30 | — | — | US | disclosed |
| US-20200052203-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2020-02-13 | — | — | US | disclosed |
| US-20190305218-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2019-10-03 | — | — | US | disclosed |
| US-20190272874-A1 | MEMORY DEVICE, METHOD OF FORMING THE SAME, METHOD FOR CONTROLLING THE SAME AND MEMORY ARRAY | NANYANG TECHNOLOGICAL UNIVERSITY (SG) | 2019-09-05 | — | — | US | disclosed |
| US-20190070854-A1 | METHOD OF MANUFACTURING LIQUID EJECTION HEAD AND METHOD OF MANUFACTURING STRUCTURE | CANON KABUSHIKI KAISHA (JP) | 2019-03-07 | — | — | US | disclosed |
| US-20180068713-A1 | Array Power Supply-Based Screening of Static Random Access Memory Cells for Bias Temperature Instability | TEXAS INSTRUMENTS INC (US) | 2018-03-08 | — | — | US | disclosed |
| US-9805788-B2 | Array power supply-based screening of static random access memory cells for bias temperature instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2017-10-31 | — | — | US | disclosed |
| US-9607904-B2 | Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices | INTERMOLECULAR, INC. (US) | 2017-03-28 | — | — | US | disclosed |
| US-9576643-B2 | Array power supply-based screening of static random access memory cells for bias temperature instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2017-02-21 | — | — | US | disclosed |
| US-9466356-B2 | Array power supply-based screening of static random access memory cells for bias temperature instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2016-10-11 | — | — | US | disclosed |
| US-9455021-B2 | Array power supply-based screening of static random access memory cells for bias temperature instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2016-09-27 | — | — | US | disclosed |
| US-9397189-B2 | Semiconductor structure having a metal gate with side wall spacers | UNITED MICROELECTRONICS CORP. (TW) | 2016-07-19 | — | — | US | disclosed |
| US-9266331-B2 | Manufacturing method of substrate for liquid ejection head | CANON KABUSHIKI KAISHA (JP) | 2016-02-23 | — | — | US | disclosed |
| US-20160035631-A1 | Atomic Layer Deposition of HfAlC as a Metal Gate Workfunction Material in MOS Devices | GlobalFoundries, Inc. (KY) | 2016-02-04 | — | — | US | disclosed |
| US-9245975-B2 | Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length | TEXAS INSTRUMENTS INCORPORATED (US) | 2016-01-26 | — | — | US | disclosed |
| US-9240404-B2 | Embedded polysilicon resistor in integrated circuits formed by a replacement gate process | TEXAS INSTRUMENTS INCORPORATED (US) | 2016-01-19 | — | — | US | disclosed |
| US-9234273-B2 | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2016-01-12 | — | — | US | disclosed |
| US-9234279-B2 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same | MICRON TECHNOLOGY, INC. (US) | 2016-01-12 | — | — | US | disclosed |
| US-20150348615-A1 | Array Power Supply-Based Screening of Static Random Access Memory Cells for Bias Temperature Instability | TEXAS INSTRUMENTS INC (US) | 2015-12-03 | — | — | US | disclosed |
| US-20150340081-A1 | Array Power Supply-Based Screening of Static Random Access Memory Cells for Bias Temperature Instability | TEXAS INSTRUMENTS INC (US) | 2015-11-26 | — | — | US | disclosed |
| US-20150340084-A1 | Array Power Supply-Based Screening of Static Random Access Memory Cells for Bias Temperature Instability | TEXAS INSTRUMENTS INC (US) | 2015-11-26 | — | — | US | disclosed |
| US-9184061-B2 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2015-11-10 | — | — | US | disclosed |
| US-20150249142-A1 | SEMICONDUCTOR STRUCTURE HAVING A METAL GATE WITH SIDE WALL SPACERS | MARLIN SEMICONDUCTOR LIMITED (IE) | 2015-09-03 | — | — | US | disclosed |
| EP-2286002-B1 | METHOD FOR MAKING ORIENTED TANTALUM PENTOXIDE FILMS. | MICRON TECHNOLOGY INC (US) | 2015-07-08 | — | — | EP | disclosed |
| US-9048254-B2 | Semiconductor structure having a metal gate with side wall spacers | UNITED MICROELECTRONICS CORP. (TW) | 2015-06-02 | — | — | US | disclosed |
| US-20150075427-A1 | Porous Organosilicate Layers, and Vapor Deposition Systems and Methods for Preparing Same | MICRON TECHNOLOGY, INC. | 2015-03-19 | — | — | US | disclosed |
| US-8971138-B2 | Method of screening static random access memory cells for positive bias temperature instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2015-03-03 | — | — | US | disclosed |
| US-20150037952-A1 | RECESSED CHANNEL INSULATED-GATE FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE AND INCREASED CHANNEL LENGTH | TEXAS INSTRUMENTS INC (US) | 2015-02-05 | — | — | US | disclosed |
| US-20150008531-A1 | EMBEDDED POLYSILICON RESISTOR IN INTEGRATED CIRCUITS FORMED BY A REPLACEMENT GATE PROCESS | TEXAS INSTRUMENTS INC (US) | 2015-01-08 | — | — | US | disclosed |
| US-20140315361-A1 | Replacement Metal Gate Process for CMOS Integrated Circuits | TEXAS INSTRUMENTS INC (US) | 2014-10-23 | — | — | US | disclosed |
| US-8865549-B2 | Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel length | TEXAS INSTRUMENTS INCORPORATED (US) | 2014-10-21 | — | — | US | disclosed |
| US-8865542-B2 | Embedded polysilicon resistor in integrated circuits formed by a replacement gate process | TEXAS INSTRUMENTS INCORPORATED (US) | 2014-10-21 | — | — | US | disclosed |
| WO-2014164742-A1 | ATOMIC LAYER DEPOSITION OF HFAIC AS A METAL GATE WORKFUNCTION MATERIAL IN MOS DEVICES | INTERMOLECULAR, INC (US) | 2014-10-09 | — | — | WO | disclosed |
| EP-1532291-B1 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL ORGANO-AMINES AND METAL ORGANO-OXIDES | MICRON TECHNOLOGY INC (US) | 2014-09-24 | — | — | EP | disclosed |
| US-8840990-B2 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same | MICRON TECHNOLOGY, INC. (US) | 2014-09-23 | — | — | US | disclosed |
| US-20140264152-A1 | Chemistry and Compositions for Manufacturing Integrated Circuits | MICRON TECHNOLOGY, INC. (US) | 2014-09-18 | — | — | US | disclosed |
| US-8803253-B2 | Replacement metal gate process for CMOS integrated circuits | TEXAS INSTRUMENTS INCORPORATED (US) | 2014-08-12 | — | — | US | disclosed |
| US-20140183657-A1 | Embedded Polysilicon Resistor in Integrated Circuits Formed by a Replacement Gate Process | TEXAS INSTRUMENTS INCORPORATED (US) | 2014-07-03 | — | — | US | disclosed |
| US-8759228-B2 | Chemistry and compositions for manufacturing integrated circuits | MICRON TECHNOLOGY, INC. (US) | 2014-06-24 | — | — | US | disclosed |
| US-8760927-B2 | Efficient static random-access memory layout | TEXAS INSTRUMENTS INCORPORATED (US) | 2014-06-24 | — | — | US | disclosed |
| US-20140159142-A1 | Recessed Channel Insulated-Gate Field Effect Transistor with Self-Aligned Gate and Increased Channel Length | TEXAS INSTRUMENTS INCORPORATED (US) | 2014-06-12 | — | — | US | disclosed |
| US-8673390-B2 | Methods of making crystalline tantalum pentoxide | MICRON TECHNOLOGY, INC. (US) | 2014-03-18 | — | — | US | disclosed |
| US-20140070327-A1 | Replacement Metal Gate Process for CMOS Integrated Circuits | TEXAS INSTRUMENTS INCORPORATED (US) | 2014-03-13 | — | — | US | disclosed |
| US-8653573-B2 | Dielectric layers and memory cells including metal-doped alumina | MICRON TECHNOLOGY, INC. (US) | 2014-02-18 | — | — | US | disclosed |
| EP-2290126-B1 | Atomic layer deposition including metal beta-diketiminate compounds | MICRON TECHNOLOGY INC (US) | 2014-02-12 | — | — | EP | disclosed |
| US-20140013600-A1 | MANUFACTURING METHOD OF SUBSTRATE FOR LIQUID EJECTION HEAD | CANON KABUSHIKI KAISHA (JP) | 2014-01-16 | — | — | US | disclosed |
| US-8617312-B2 | Systems and methods for forming layers that contain niobium and/or tantalum | MICRON TECHNOLOGY, INC. (US) | 2013-12-31 | — | — | US | disclosed |
| US-8557697-B2 | Vapor deposition methods for forming a metal-containing layer on a substrate | MICRON TECHNOLOGY, INC. (US) | 2013-10-15 | — | — | US | disclosed |
| US-20130182495-A1 | Efficient Static Random-Access Memory Layout | TEXAS INSTRUMENTS INCORPORATED (US) | 2013-07-18 | — | — | US | disclosed |
| US-8399317-B2 | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor | INTEL CORPORATION (US) | 2013-03-19 | — | — | US | disclosed |
| US-8394725-B2 | Systems and methods for forming metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2013-03-12 | — | — | US | disclosed |
| US-20130058177-A1 | Method of Screening Static Random Access Memory Cells for Positive Bias Temperature Instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2013-03-07 | — | — | US | disclosed |
| US-20130021864-A1 | Array Power Supply-Based Screening of Static Random Access Memory Cells for Bias Temperature Instability | TEXAS INSTRUMENTS INCORPORATED (US) | 2013-01-24 | — | — | US | disclosed |
| US-8357784-B2 | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2013-01-22 | — | — | US | disclosed |
| US-20130011990-A1 | Methods of Making Crystalline Tantalum Pentoxide | MICRON TECHNOLOGY, INC. (US) | 2013-01-10 | — | — | US | disclosed |
| US-8282988-B2 | Methods of making crystalline tantalum pentoxide | MICRON TECHNOLOGY, INC (US) | 2012-10-09 | — | — | US | disclosed |
| US-8208241-B2 | Crystallographically orientated tantalum pentoxide and methods of making same | MICRON TECHNOLOGY, INC. (US) | 2012-06-26 | — | — | US | disclosed |
| US-8188464-B2 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds | MICRON TECHNOLOGY, INC. (US) | 2012-05-29 | — | — | US | disclosed |
| US-20120067283-A1 | Systems and Methods for Forming Metal Oxide Layers | MICRON TECHNOLOGY, INC. (US) | 2012-03-22 | — | — | US | disclosed |
| CN-101208295-B | Asymmetric ligand source, reduced symmetry metal-containing compounds, and systems and methods comprising the same | MICRON TECHNOLOGY INC | 2012-03-21 | — | — | CN | disclosed |
| US-8120114-B2 | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate | INTEL CORPORATION (US) | 2012-02-21 | — | — | US | disclosed |
| US-8114219-B2 | Systems and methods for forming metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2012-02-14 | — | — | US | disclosed |
| US-20120034773-A1 | TRANSISTOR HAVING AN ETCH STOP LAYER INCLUDING A METAL COMPOUND THAT IS SELECTIVELY FORMED OVER A METAL GATE, AND METHOD THEREFOR | OTT ANDREW (US) | 2012-02-09 | — | — | US | disclosed |
| US-20120021587-A1 | Systems and Methods for Forming Metal Oxide Layers | MICRON TECHNOLOGY, INC. (US) | 2012-01-26 | — | — | US | disclosed |
| EP-1907354-B1 | UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME | MICRON TECHNOLOGY INC (US) | 2012-01-25 | — | — | EP | disclosed |
| US-20110300721-A1 | Methods of Making Crystalline Tantalum Pentoxide | MICRON TECHNOLOGY, INC. (US) | 2011-12-08 | — | — | US | disclosed |
| US-20110301383-A1 | Beta-Diketiminate Ligand Sources and Metal-Containing Compounds Thereof, and Systems and Methods Including Same | MICRON TECHNOLOGY, INC. (US) | 2011-12-08 | — | — | US | disclosed |
| US-8034728-B2 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | MICRON TECHNOLOGY, INC. (US) | 2011-10-11 | — | — | US | disclosed |
| US-8017184-B2 | β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2011-09-13 | — | — | US | disclosed |
| US-8012532-B2 | Methods of making crystalline tantalum pentoxide | MICRON TECHNOLOGY, INC. (US) | 2011-09-06 | — | — | US | disclosed |
| US-20110206921-A1 | Porous Organosilicate Layers, and Vapor Deposition Systems and Methods for Preparing Same | MICRON TECHNOLOGY, INC. (US) | 2011-08-25 | — | — | US | disclosed |
| US-7960291-B2 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same | MICRON TECHNOLOGY, INC. (US) | 2011-06-14 | — | — | US | disclosed |
| US-20110127589-A1 | SEMICONDUCTOR STRUCTURE HAIVNG A METAL GATE AND METHOD OF FORMING THE SAME | MARLIN SEMICONDUCTOR LIMITED (IE) | 2011-06-02 | — | — | US | disclosed |
| US-20110121376-A1 | Dielectric Layers and Memory Cells Including Metal-Doped Alumina | MICRON TECHNOLOGY, INC. (US) | 2011-05-26 | — | — | US | disclosed |
| US-7943507-B2 | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds | ROUND ROCK RESEARCH, LLC (US) | 2011-05-17 | — | — | US | disclosed |
| US-7943501-B2 | Systems and methods of forming tantalum silicide layers | MICRON TECHNOLOGY, INC. (US) | 2011-05-17 | — | — | US | disclosed |
| EP-1907600-B1 | ATOMIC LAYER DEPOSITION USING ALKALINE EARTH METAL BETA-DIKETIMINATE PRECURSORS | MICRON TECHNOLOGY INC (US) | 2011-05-11 | — | — | EP | disclosed |
| US-7919409-B2 | Materials for adhesion enhancement of copper film on diffusion barriers | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2011-04-05 | — | — | US | disclosed |
| US-20110071316-A1 | Unsymmetrical Ligand Sources, Reduced Symmetry Metal-Containing Compounds, and Systems and Methods Including Same | MICRON TECHNOLOGY, INC. (US) | 2011-03-24 | — | — | US | disclosed |
| US-7902099-B2 | Dielectric layers and memory cells including metal-doped alumina | MICRON TECHNOLOGY, INC. (US) | 2011-03-08 | — | — | US | disclosed |
| EP-2290126-A2 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds | Micron Technology, INC. (US) | 2011-03-02 | — | — | EP | disclosed |
| EP-2286002-A1 | METHOD FOR MAKING ORIENTED TANTALUM PENTOXIDE FILMS | Micron Technology, INC. (US) | 2011-02-23 | — | — | EP | disclosed |
| US-7892964-B2 | Strontium precursor beta -diketonate, beta -diketiminate, amidinate, cyclopentadienyl, diorganoamide, carboxylate and/or alkoxide; and titanium precursor compound are reacted in a plurality of cycles to form strontium titanate; low strontium carbonate content; atomic layer deposition; high dielectrics | MICRON TECHNOLOGY, INC. (US) | 2011-02-22 | — | — | US | disclosed |
| US-20110021001-A1 | Vapor Deposition Methods for Forming a Metal-Containing Layer on a Substrate | MICRON TECHNOLOGY, INC. (US) | 2011-01-27 | — | — | US | disclosed |
| US-7858523-B2 | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2010-12-28 | — | — | US | disclosed |
| US-7858815-B2 | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds | MICRON TECHNOLOGY, INC. (US) | 2010-12-28 | — | — | US | disclosed |
| US-7837797-B2 | Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition | MICRON TECHNOLOGY, INC. (US) | 2010-11-23 | — | — | US | disclosed |
| US-20100186668-A1 | ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING METAL BETA-DIKETIMINATE COMPOUNDS | MICRON TECHNOLOGY, INC. (US) | 2010-07-29 | — | — | US | disclosed |
| US-20100171089-A1 | DIELECTRIC LAYERS AND MEMORY CELLS INCLUDING METAL-DOPED ALUMINA | MICRON TECHNOLOGY, INC. (US) | 2010-07-08 | — | — | US | disclosed |
| US-20100147218-A1 | SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS | MICRON TECHNOLOGY, INC. (US) | 2010-06-17 | — | — | US | disclosed |
| EP-2186122-A2 | INTERMETALLIC CONDUCTORS | Micron Technology, Inc. (US) | 2010-05-19 | — | — | EP | disclosed |
| US-7709399-B2 | Atomic layer deposition systems and methods including metal β-diketiminate compounds | MICRON TECHNOLOGY, INC. (US) | 2010-05-04 | — | — | US | disclosed |
| US-20100099272-A1 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL DIKETONATES AND/OR KETOIMINES | MICRON TECHNOLOGY, INC. (US) | 2010-04-22 | — | — | US | disclosed |
| US-7683001-B2 | Dielectric layers and memory cells including metal-doped alumina | MICRON TECHNOLOGY, INC. (US) | 2010-03-23 | — | — | US | disclosed |
| CN-101673706-A | Materials for adhesion enhancement of copper film on diffusion barriers | AIR PROD & CHEM | 2010-03-17 | — | — | CN | disclosed |
| US-7678708-B2 | Systems and methods for forming metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2010-03-16 | — | — | US | disclosed |
| US-7666801-B2 | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands | MICRON TECHNOLOGY, INC. (US) | 2010-02-23 | — | — | US | disclosed |
| US-20100038785-A1 | Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-02-18 | — | — | US | disclosed |
| EP-2154717-A2 | Materials for adhesion enhancement of copper film on diffusion barriers | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-02-17 | — | — | EP | disclosed |
| US-7655547-B2 | Metal spacer in single and dual damascene processing | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-02-02 | — | — | US | disclosed |
| US-7648926-B2 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | MICRON TECHNOLOGY, INC. (US) | 2010-01-19 | — | — | US | disclosed |
| US-7645699-B2 | Method of forming a diffusion barrier layer using a TaSiN layer and method of forming a metal interconnection line using the same | DONGBU ELECTRONICS CO., LTD. (KR) | 2010-01-12 | — | — | US | disclosed |
| WO-2009148799-A1 | METHOD FOR MAKING ORIENTED TANTALUM PENTOXIDE FILMS | MICRON TECHNOLOGY, INC (US) | 2009-12-10 | — | — | WO | disclosed |
| US-20090303657-A1 | CRYSTALLOGRAPHICALLY ORIENTATED TANTALUM PENTOXIDE AND METHODS OF MAKING SAME | MICRON TECHNOLOGY, INC. (US) | 2009-12-10 | — | — | US | disclosed |
| US-20090275199-A1 | UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME | MICRON TECHNOLOGY, INC. (US) | 2009-11-05 | — | — | US | disclosed |
| US-20090215262-A1 | ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING SILICON-CONTAINING TANTALUM PRECURSOR COMPOUNDS | MICRON TECHNOLOGY, INC. (US) | 2009-08-27 | — | — | US | disclosed |
| US-7576378-B2 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | MICRON TECHNOLOGY, INC. (US) | 2009-08-18 | — | — | US | disclosed |
| US-7572731-B2 | Group 2a, yttrium or lanthanide complexes of a beta-diketiminate ligand; for example, Strontium bis(N-isopropyl-(4-tert-butylimino)-2-penten-2-aminato); for chemical vapor deposition in semiconductor manufacture; higher vapor pressure, lower melting point, and lower sublimation point | MICRON TECHNOLOGY, INC. (US) | 2009-08-11 | — | — | US | disclosed |
| US-20090197421-A1 | CHEMISTRY AND COMPOSITIONS FOR MANUFACTURING INTEGRATED CIRCUITS | MICRON TECHNOLOGY, INC. (US) | 2009-08-06 | — | — | US | disclosed |
| US-20090155486-A1 | METHODS OF MAKING CRYSTALLINE TANTALUM PENTOXIDE | MICRON TECHNOLOGY, INC. (US) | 2009-06-18 | — | — | US | disclosed |
| US-20090149033-A1 | SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS | MICRON TECHNOLOGY, INC. (US) | 2009-06-11 | — | — | US | disclosed |
| US-20090127105-A1 | SYSTEMS AND METHODS FOR FORMING NIOBIUM AND/OR VANADIUM CONTAINING LAYERS USING ATOMIC LAYER DEPOSITION | MICRON TECHNOLOGY, INC. (US) | 2009-05-21 | — | — | US | disclosed |
| US-7528044-B2 | CMOSFET with hybrid-strained channels | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2009-05-05 | — | — | US | disclosed |
| US-20090109731-A1 | DIELECTRIC LAYERS AND MEMORY CELLS INCLUDING METAL-DOPED ALUMINA | MICRON TECHNOLOGY, INC. (US) | 2009-04-30 | — | — | US | disclosed |
| US-7521356-B2 | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds | MICRON TECHNOLOGY, INC. (US) | 2009-04-21 | — | — | US | disclosed |
| US-20090093125-A1 | CHEMISTRY AND COMPOSITIONS FOR MANUFACTURING INTEGRATED CIRCUITS | MICRON TECHNOLOGY, INC. (US) | 2009-04-09 | — | — | US | disclosed |
| US-20090075488-A1 | BETA-DIKETIMINATE LIGAND SOURCES AND METAL-CONTAINING COMPOUNDS THEREOF, AND SYSTEMS AND METHODS INCLUDING SAME | MICRON TECHNOLOGY, INC. (US) | 2009-03-19 | — | — | US | disclosed |
| WO-2009020755-A2 | INTERMETALLIC CONDUCTORS | MICRON TECHNOLOGY, INC. (US) | 2009-02-12 | — | — | WO | disclosed |
| US-20090042406-A1 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL COMPOUNDS CONTAINING AMINOSILANE LIGANDS | MICRON TECHNOLOGY, INC. (US) | 2009-02-12 | — | — | US | disclosed |
| US-20090032958-A1 | Intermetallic conductors | MICRON TECHNOLOGY, INC. (US) | 2009-02-05 | — | — | US | disclosed |
| US-7482284-B2 | Deposition methods for forming silicon oxide layers | MICRON TECHNOLOGY, INC. (US) | 2009-01-27 | — | — | US | disclosed |
| US-7482037-B2 | Methods for forming niobium and/or vanadium containing layers using atomic layer deposition | MICRON TECHNOLOGY, INC. (US) | 2009-01-27 | — | — | US | disclosed |
| US-7473662-B2 | Metal-doped alumina and layers thereof | MICRON TECHNOLOGY, INC. (US) | 2009-01-06 | — | — | US | disclosed |
| US-20080318440-A1 | POROUS ORGANOSILICATE LAYERS, AND VAPOR DEPOSITION SYSTEMS AND METHODS FOR PREPARING SAME | MICRON TECHNOLOGY, INC. (US) | 2008-12-25 | — | — | US | disclosed |
| EP-1532290-B1 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY INC (US) | 2008-12-24 | — | — | EP | disclosed |
| US-7462559-B2 | Systems and methods for forming metal-containing layers using vapor deposition processes | MICRON TECHNOLOGY, INC. (US) | 2008-12-09 | — | — | US | disclosed |
| US-20080299782-A9 | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds | RAMASWAMY NIRMAL | 2008-12-04 | — | — | US | disclosed |
| US-20080293242-A1 | METAL SPACER IN SINGLE AND DUAL DAMASCENE PROCESSING | INTERNATIONAL BUSINESS MACHINESS CORPORATION (US) | 2008-11-27 | — | — | US | disclosed |
| US-20080277790-A1 | Semiconductor Device | LEE HAN-CHOON | 2008-11-13 | — | — | US | disclosed |
| WO-2008137401-A1 | CONSTRUCTIONS AND DEVICES INCLUDING TANTALUM OXIDE LAYERS ON NIOBIUM NITRIDE AND METHODS FOR PRODUCING THE SAME | MICRON TECHNOLOGY, INC (US) | 2008-11-13 | — | — | WO | disclosed |
| US-20080280455-A1 | ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING METAL BETA-DIKETIMINATE COMPOUNDS | MICRON TECHNOLOGY, INC. (US) | 2008-11-13 | — | — | US | disclosed |
| US-20080272421-A1 | Crystallographically textured on niobium nitride electrodes; high dielectric constant; new generation of integrated circuit devices | MICRON TECHNOLOGY, INC. (US) | 2008-11-06 | — | — | US | disclosed |
| US-7439338-B2 | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2008-10-21 | — | — | US | disclosed |
| US-7439195-B2 | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands | MICRON TECHNOLOGY, INC. (US) | 2008-10-21 | — | — | US | disclosed |
| CN-100422383-C | Systems and methods for forming metal oxides using alcohols | MICRON TECHNOLOGY INC (US) | 2008-10-01 | — | — | CN | disclosed |
| US-7427570-B2 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same | MICRON TECHNOLOGY, INC. (US) | 2008-09-23 | — | — | US | disclosed |
| WO-2007002672-A9 | ATOMIC LAYER DEPOSITION USING ALKALINE EARTH METAL BETA-DIKETIMINATE PRECURSORS | MICRON TECHNOLOGY INC (US) | 2008-09-18 | — | — | WO | disclosed |
| US-20080227303-A1 | SYSTEMS AND METHODS FOR FORMING TANTALUM OXIDE LAYERS AND TANTALUM PRECURSOR COMPOUNDS | MICRON TECHNOLOGY, INC. (US) | 2008-09-18 | — | — | US | disclosed |
| US-20080214001-A9 | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2008-09-04 | — | — | US | disclosed |
| US-20080210157-A9 | Systems and methods for forming strontium-and/or barium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2008-09-04 | — | — | US | disclosed |
| US-7416994-B2 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds | MICRON TECHNOLOGY, INC. (US) | 2008-08-26 | — | — | US | disclosed |
| US-20080194088-A1 | Vapor deposition methods for forming a metal-containing layer on a substrate | MICRON TECHNOLOGY, INC. (US) | 2008-08-14 | — | — | US | disclosed |
| US-7410918-B2 | Systems and methods for forming metal oxides using alcohols | MICRON TECHNOLOGY, INC. (US) | 2008-08-12 | — | — | US | disclosed |
| US-7407881-B2 | Semiconductor device and method for manufacturing the same | DONGBU ELECTRONICS CO., LTD. (KR) | 2008-08-05 | — | — | US | disclosed |
| US-7402516-B2 | Method for making integrated circuits | MICRON TECHNOLOGY, INC. (US) | 2008-07-22 | — | — | US | disclosed |
| US-20080157365-A1 | Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor | INTEL CORPORATION | 2008-07-03 | — | — | US | disclosed |
| CN-101208295-A | Asymmetric ligand source, reduced symmetry metal-containing compounds, and systems and methods comprising the same | MICRON TECHNOLOGY INC (US) | 2008-06-25 | — | — | CN | disclosed |
| US-7381637-B2 | Metal spacer in single and dual damascence processing | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | disclosed |
| US-7371688-B2 | Removal of transition metal ternary and/or quaternary barrier materials from a substrate | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-05-13 | — | — | US | disclosed |
| US-7368402-B2 | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds | MICRON TECHNOLOGY, INC. (US) | 2008-05-06 | — | — | US | disclosed |
| US-7368378-B2 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals | MICRON TECHNOLOGY, INC. (US) | 2008-05-06 | — | — | US | disclosed |
| US-20080102629-A1 | SYSTEMS AND METHODS OF FORMING TANTALUM SILICIDE LAYERS | MICRON TECHNOLOGY, INC. (US) | 2008-05-01 | — | — | US | disclosed |
| EP-1911074-A2 | BETA-DIKETIMINATE LIGAND SOURCES AND METAL-CONTAINING COMPOUNDS THEREOF, AND SYSTEMS AND METHODS INCLUDING SAME | MICRON TECHNOLOGY, INC. (US) | 2008-04-16 | — | — | EP | disclosed |
| EP-1907354-A2 | UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME | MICRON TECHNOLOGY, INC. (US) | 2008-04-09 | — | — | EP | disclosed |
| EP-1907600-A2 | ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING METAL BETA-DIKETIMINATE COMPOUNDS | Micron Technology, Inc. (US) | 2008-04-09 | — | — | EP | disclosed |
| US-20080064209-A1 | SYSTEMS AND METHODS FOR FORMING METAL-CONTAINING LAYERS USING VAPOR DEPOSITION PROCESSES | MICRON TECHNOLOGY, INC. (US) | 2008-03-13 | — | — | US | disclosed |
| US-7332442-B2 | Systems and methods for forming metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2008-02-19 | — | — | US | disclosed |
| US-20070295273-A1 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | MICRON TECHNOLOGY, INC. | 2007-12-27 | — | — | US | disclosed |
| US-7300873-B2 | Systems and methods for forming metal-containing layers using vapor deposition processes | MICRON TECHNOLOGY, INC. (US) | 2007-11-27 | — | — | US | disclosed |
| US-7262130-B1 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals | MICRON TECHNOLOGY, INC. (US) | 2007-08-28 | — | — | US | disclosed |
| US-7253122-B2 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | MICRON TECHNOLOGY, INC. (US) | 2007-08-07 | — | — | US | disclosed |
| US-7253521-B2 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals | MICRON TECHNOLOGY, INC. (US) | 2007-08-07 | — | — | US | disclosed |
| US-20070172745-A1 | Evanescent wave assist features for microlithography | SMITH BRUCE W | 2007-07-26 | — | — | US | disclosed |
| US-20070155190-A1 | Systems and methods for forming metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2007-07-05 | — | — | US | disclosed |
| US-20070148932-A9 | Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition | MICRON TECHNOLOGY, INC. (US) | 2007-06-28 | — | — | US | disclosed |
| US-20070141830-A1 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals | MICRON TECHNOLOGY, INC. | 2007-06-21 | — | — | US | disclosed |
| US-20070093046-A1 | CMOSFET With Hybrid-Strained Channels | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2007-04-26 | — | — | US | disclosed |
| CN-1937253-A | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY INC (US) | 2007-03-28 | — | — | CN | disclosed |
| US-20070049055-A1 | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds | ROUND ROCK RESEARCH, LLC | 2007-03-01 | — | — | US | disclosed |
| US-20070049044-A1 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same | MICRON TECHNOLOGY, INC. (US) | 2007-03-01 | — | — | US | disclosed |
| US-20070006798-A1 | Systems and methods for forming strontium-and/or barium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2007-01-11 | — | — | US | disclosed |
| WO-2007002674-A2 | UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME | MICRON TECHNOLOGY, INC. (US) | 2007-01-04 | — | — | WO | disclosed |
| WO-2007002673-A2 | BETA-DIKETIMINATE LIGAND SOURCES AND METAL-CONTAINING COMPOUNDS THEREOF, AND SYSTEMS AND METHODS INCLUDING SAME | MICRON TECHNOLOGY, INC. (US) | 2007-01-04 | — | — | WO | disclosed |
| WO-2007002672-A2 | ATOMIC LAYER DEPOSITION USING ALKALINE EARTH METAL BETA-DIKETIMINATE PRECURSORS | MICRON TECHNOLOGY, INC. (US) | 2007-01-04 | — | — | WO | disclosed |
| US-20060292857-A1 | METHODS FOR MAKING INTEGRATED-CIRCUIT WIRING FROM COPPER, SILVER, GOLD, AND OTHER METALS | MICRON TECHNOLOGY, INC. | 2006-12-28 | — | — | US | disclosed |
| US-20060292303-A1 | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2006-12-28 | — | — | US | disclosed |
| US-20060292841-A1 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds | MICRON TECHNOLOGY, INC. (US) | 2006-12-28 | — | — | US | disclosed |
| US-20060292873-A1 | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same | MICRON TECHNOLOGY, INC. (US) | 2006-12-28 | — | — | US | disclosed |
| US-7145166-B2 | CMOSFET with hybrid strained channels | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2006-12-05 | — | — | US | disclosed |
| US-20060270223-A1 | Systems and methods for forming metal-containing layers using vapor deposition processes | MICRON TECHNOLOGY, INC. (US) | 2006-11-30 | — | — | US | disclosed |
| US-20060261389-A1 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2006-11-23 | — | — | US | disclosed |
| US-20060258175-A1 | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands | MICRON TECHNOLOGY, INC. (US) | 2006-11-16 | — | — | US | disclosed |
| US-20060252244-A1 | Systems and methods for forming metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2006-11-09 | — | — | US | disclosed |
| US-20060252279-A1 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | MICRON TECHNOLOGY, INC. (US) | 2006-11-09 | — | — | US | disclosed |
| US-20060246733-A1 | METHOD FOR MAKING INTEGRATED CIRCUITS | MICRON TECHNOLOGY, INC. | 2006-11-02 | — | — | US | disclosed |
| US-7115166-B2 | Systems and methods for forming strontium- and/or barium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2006-10-03 | — | — | US | disclosed |
| US-7115528-B2 | Systems and method for forming silicon oxide layers | MICRON TECHNOLOGY, INC. (US) | 2006-10-03 | — | — | US | disclosed |
| US-7112485-B2 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2006-09-26 | — | — | US | disclosed |
| US-7087481-B2 | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands | MICRON TECHNOLOGY, INC. (US) | 2006-08-08 | — | — | US | disclosed |
| US-20060172485-A1 | Systems and methods for forming metal oxides using alcohols | MICRON TECHNOLOGY, INC. (US) | 2006-08-03 | — | — | US | disclosed |
| US-20060148246-A1 | Method of forming a diffusion barrier layer using a TaSiN layer and method of forming a metal interconnection line using the same | DONGBUANAM SEMICONDUCTOR INC. | 2006-07-06 | — | — | US | disclosed |
| US-7067421-B2 | Multilevel copper interconnect with double passivation | MICRON TECHNOLOGY, INC. (US) | 2006-06-27 | — | — | US | disclosed |
| US-7041609-B2 | Systems and methods for forming metal oxides using alcohols | MICRON TECHNOLOGY, INC. (US) | 2006-05-09 | — | — | US | disclosed |
| US-7041574-B2 | Composite intermetal dielectric structure including low-k dielectric material | INFINEON TECHNOLOGIES AG (DE) | 2006-05-09 | — | — | US | disclosed |
| US-7030042-B2 | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds | MICRON TECHNOLOGY, INC. (US) | 2006-04-18 | — | — | US | disclosed |
| US-20060048711-A1 | Systems and methods of forming tantalum silicide layers | MICRON TECHNOLOGY, INC. (US) | 2006-03-09 | — | — | US | disclosed |
| US-7008872-B2 | Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures | INTEL CORPORATION (US) | 2006-03-07 | — | — | US | disclosed |
| US-20060040480-A1 | Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition | MICRON TECHNOLOGY, INC. (US) | 2006-02-23 | — | — | US | disclosed |
| US-20060038199-A1 | CMOSFET with hybrid strained channels | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2006-02-23 | — | — | US | disclosed |
| US-20060035462-A1 | Systems and methods for forming metal-containing layers using vapor deposition processes | MICRON TECHNOLOGY, INC. (US) | 2006-02-16 | — | — | US | disclosed |
| US-6995081-B2 | Systems and methods for forming tantalum silicide layers | MICRON TECHNOLOGY, INC. (US) | 2006-02-07 | — | — | US | disclosed |
| US-20060006542-A1 | Semiconductor device and method for manufacturing the same | DONGBU ELECTRONICS CO., LTD. (KR) | 2006-01-12 | — | — | US | disclosed |
| US-6984592-B2 | Systems and methods for forming metal-doped alumina | MICRON TECHNOLOGY, INC. (US) | 2006-01-10 | — | — | US | disclosed |
| US-20050287819-A1 | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides | MICRON TECHNOLOGY, INC. (US) | 2005-12-29 | — | — | US | disclosed |
| CN-1688744-A | Systems and methods for forming zirconium and/or hafnium containing layers | MICRON TECHNOLOGY INC (US) | 2005-10-26 | — | — | CN | disclosed |
| CN-1688742-A | System and method for forming metal oxides using alcohols | MICRON TECHNOLOGY INC (US) | 2005-10-26 | — | — | CN | disclosed |
| CN-1688743-A | System and method for generating metal oxide using metal organic amine and metal organic oxide | MICRON TECHNOLOGY INC (US) | 2005-10-26 | — | — | CN | disclosed |
| US-6958300-B2 | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides | MICRON TECHNOLOGY, INC. (US) | 2005-10-25 | — | — | US | disclosed |
| US-6958547-B2 | Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs | INTEL CORPORATION (US) | 2005-10-25 | — | — | US | disclosed |
| US-20050221006-A1 | Metal-doped alumina and layers thereof | MICRON TECHNOLOGY, INC. (US) | 2005-10-06 | — | — | US | disclosed |
| US-20050160981-A9 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2005-07-28 | — | — | US | disclosed |
| US-20050146040-A1 | Metal spacer in single and dual damascene processing | GLOBALFOUNDRIES INC. (KY) | 2005-07-07 | — | — | US | disclosed |
| US-20050136689-A9 | Systems and methods for forming metal oxides using alcohols | MICRON TECHNOLOGY, INC. (US) | 2005-06-23 | — | — | US | disclosed |
| EP-1534875-A1 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING ALCOHOLS | MICRON TECHNOLOGY, INC. (US) | 2005-06-01 | — | — | EP | disclosed |
| US-20050112871-A1 | MULTILEVEL COPPER INTERCONNECT WITH DOUBLE PASSIVATION | MICRON TECHNOLOGY, INC. | 2005-05-26 | — | — | US | disclosed |
| US-20050112901-A1 | Removal of transition metal ternary and/or quaternary barrier materials from a substrate | VERSUM MATERIALS US, LLC | 2005-05-26 | — | — | US | disclosed |
| EP-1532291-A2 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL ORGANO-AMINES AND METAL ORGANO-OXIDES | MICRON TECHNOLOGY, INC. (US) | 2005-05-25 | — | — | EP | disclosed |
| EP-1532290-A2 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY, INC. (US) | 2005-05-25 | — | — | EP | disclosed |
| US-6888251-B2 | Metal spacer in single and dual damascene processing | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-05-03 | — | — | US | disclosed |
| US-6884466-B2 | Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films | GELEST, INC. (US) | 2005-04-26 | — | — | US | disclosed |
| US-20050023697-A1 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals | MICRON TECHNOLOGY, INC. | 2005-02-03 | — | — | US | disclosed |
| US-20050019978-A1 | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds | MICRON TECHNOLOGY, INC. (US) | 2005-01-27 | — | — | US | disclosed |
| US-20050009266-A1 | Systems and methods for forming refractory metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2005-01-13 | — | — | US | disclosed |
| US-20040259273-A1 | Composite intermetal dielectric structure including low-k dielectric material | KIM SUN-OO (US) | 2004-12-23 | — | — | US | disclosed |
| US-20040248400-A1 | Composite low-k dielectric structure | INFINEON TECHNOLOGIES AG (DE) | 2004-12-09 | — | — | US | disclosed |
| US-20040219746-A1 | Systems and methods for forming metal oxide layers | MICRON TECHNOLOGY, INC. | 2004-11-04 | — | — | US | disclosed |
| EP-1466359-A2 | USE OF CONDUCTIVE ELECTROLESSLY DEPOSIDED ETCH STOP LAYERS, LINER LAYERS AND VIA PLUGS IN INTERCONNECT STRUCTURES | INTEL CORPORATION (US) | 2004-10-13 | — | — | EP | disclosed |
| US-20040197946-A1 | Systems and methods for forming strontium-and/or barium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2004-10-07 | — | — | US | disclosed |
| US-6794226-B2 | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-09-21 | — | — | US | disclosed |
| US-6784049-B2 | Method for forming refractory metal oxide layers with tetramethyldisiloxane | MICRON TECHNOLOGY, INC. | 2004-08-31 | — | — | US | disclosed |
| US-6730164-B2 | Systems and methods for forming strontium- and/or barium-containing layers | MICRON TECHNOLOGY, INC. | 2004-05-04 | — | — | US | disclosed |
| WO-2004020689-A2 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL ORGANO-AMINES AND METAL ORGANO-OXIDES | MICRON TECHNOLOGY, INC. (US) | 2004-03-11 | — | — | WO | disclosed |
| WO-2004020691-A2 | SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM-CONTAINING LAYERS | MICRON TECHNOLOGY, INC. (US) | 2004-03-11 | — | — | WO | disclosed |
| WO-2004020690-A1 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING ALCOHOLS | MICRON TECHNOLOGY, INC. (US) | 2004-03-11 | — | — | WO | disclosed |
| US-20040043630-A1 | Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides | MICRON TECHNOLOGY, INC. | 2004-03-04 | — | — | US | disclosed |
| US-20040043151-A1 | Vapor deposition; diffusion barrier | MICRON TECHNOLOGY, INC. | 2004-03-04 | — | — | US | disclosed |
| US-20040040494-A1 | SYSTEMS AND METHODS FOR FORMING STRONTIUM- AND/OR BARIUM-CONTAINING LAYERS | MICRON TECHNOLOGY, INC. | 2004-03-04 | — | — | US | disclosed |
| US-20040043636-A1 | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds | MICRON TECHNOLOGY, INC. | 2004-03-04 | — | — | US | disclosed |
| US-20040043634-A1 | Systems and methods for forming metal-doped alumina | MICRON TECHNOLOGY, INC | 2004-03-04 | — | — | US | disclosed |
| US-20040043635-A1 | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines | MICRON TECHNOLOGY, INC. | 2004-03-04 | — | — | US | disclosed |
| US-20040043632-A1 | Systems and methods for forming metal oxides using alcohols | MICRON TECHNOLOGY, INC. | 2004-03-04 | — | — | US | disclosed |
| US-20040043625-A1 | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands | MICRON TECHNOLOGY, INC. (US) | 2004-03-04 | — | — | US | disclosed |
| US-20040040501-A1 | Systems and methods for forming zirconium and/or hafnium-containing layers | MICRON TECHNOLOGY, INC. (US) | 2004-03-04 | — | — | US | disclosed |
| US-20040043633-A1 | Systems and methods for forming refractory metal oxide layers | MICRON TECHNOLOGY, INC. (US) | 2004-03-04 | — | — | US | disclosed |
| US-6674167-B1 | Multilevel copper interconnect with double passivation | MICRON TECHNOLOGY, INC. | 2004-01-06 | — | — | US | disclosed |
| US-20040000721-A1 | Metal spacer in single and dual damascene processing | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-01-01 | — | — | US | disclosed |
| WO-2003094209-A2 | USE OF CONDUCTIVE ELECTROLESSLY DEPOSIDED ETCH STOP LAYERS, LINER LAYERS AND VIA PLUGS IN INTERCONNECT STRUCTURES | INTEL CORPORATION (US) | 2003-11-13 | — | — | WO | disclosed |
| US-20030207560-A1 | Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures | INTEL CORPORATION | 2003-11-06 | — | — | US | disclosed |
| US-20030207561-A1 | Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs | DUBIN VALERY M (US) | 2003-11-06 | — | — | US | disclosed |
| US-20030198587-A1 | Method for low-temperature organic chemical vapor deposition of tungsten nitride, tungsten nitride films and tungsten nitride diffusion barriers for computer interconnect metallization | GELEST, INC. | 2003-10-23 | — | — | US | disclosed |
| US-20030151116-A1 | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2003-08-14 | — | — | US | disclosed |
| US-6545339-B2 | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2003-04-08 | — | — | US | disclosed |
| US-6508561-B1 | Optical mirror coatings for high-temperature diffusion barriers and mirror shaping | ANALOG DEVICES, INC. | 2003-01-21 | — | — | US | disclosed |
| US-20020130367-A1 | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-09-19 | — | — | US | disclosed |
| WO-2002056340-A2 | SEMICONDUCTOR DEVICE WITH FUSE, RESISTOR, DIFFUSION BARRIER OR CAPACITOR OF A REFRACTORY METAL-SILICON-NITROGEN COMPOUND | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2002-07-18 | — | — | WO | disclosed |
| JP-2001284356-A | BARRIER METAL LAMINATE FILM STRUCTURE, METHOD OF FORMING LAMINATE FILM THEREOF AND METHOD OF FORMING WIRING | ULVAC JAPAN LTD | 2001-10-12 | — | — | JP | disclosed |
| US-6294396-B1 | Monitoring barrier metal deposition for metal interconnect | ADVANCED MICRO DEVICES, INC. | 2001-09-25 | — | — | US | disclosed |
| WO-2000047404-A9 | CHEMICAL VAPOR DEPOSITION OF TUNGSTEN NITRIDE | GELEST INC (US) | 2001-08-30 | — | — | WO | disclosed |
| US-6268283-B1 | Method for forming dual damascene structure | UNITED MICROELECTRONICS CORP. (TW) | 2001-07-31 | — | — | US | disclosed |
| US-6225204-B1 | Method for preventing poisoned vias and trenches | UNITED MICROELECTRONICS CORP. (TW) | 2001-05-01 | — | — | US | disclosed |
| WO-2000047404-A1 | CHEMICAL VAPOR DEPOSITION OF TUNGSTEN NITRIDE | GELEST, INC. (US) | 2000-08-17 | — | — | WO | disclosed |
| US-6083840-A | FOR POLISHING A COPPER COATED WAFER CONTAINING A COPPER ADHESION-PROMOTING LAYER AND A SILICON-BASED LAYER | ARCH SPECIALTY CHEMICALS, INC. (US) | 2000-07-04 | — | — | US | disclosed |
| US-6071806-A | Method for preventing poisoned vias and trenches | UNITED MICROELECTRONICS CORP. (TW) | 2000-06-06 | — | — | US | disclosed |
| US-6013581-A | Method for preventing poisoned vias and trenches | UNITED MICROELECTRONICS CORP. (TW) | 2000-01-11 | — | — | US | disclosed |
| EP-0936667-A1 | Lattice matched barrier for dual doped polysilicon gates | LUCENT TECHNOLOGIES INC. (US) | 1999-08-18 | — | — | EP | disclosed |
| US-5135878-A | Diffusion barrier of TA-SI-N; reliability | SOLID STATE DEVICES, INC. (US) | 1992-08-04 | — | — | US | disclosed |
| US-5066615-A | Integrated Circuits | AT&T BELL LABORATORIES (US) | 1991-11-19 | — | — | US | disclosed |
| US-5066615-A | Integrated Circuits | AT&T BELL LABORATORIES (US) | 1991-11-19 | — | — | US | disclosed |