SCHEMBL2011100

SCHEMBL2011100

[GaH3].[LiH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27225411 1.00
Hydrochloric Acid SCHEMBL9749716 0.82
SCHEMBL7204859 0.82
Hydrogen Sulfide SCHEMBL6008801 0.82
Water SCHEMBL339458 0.82
SCHEMBL9118705 0.82
SCHEMBL8197250 0.82
Water SCHEMBL137758 0.82
SCHEMBL3152220 0.82
SCHEMBL3368080 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 287 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4661134-A1 BATTERY ASSEMBLY AND ELECTRIC DEVICE BYD Company Limited (CN) 2025-12-10 EP claimed
CN-120149339-A All-solid-state composite positive plate and cold sintering preparation method and application thereof 清华大学深圳国际研究生院 2025-06-13 CN claimed
CN-119852529-A Electrolyte, electrochemical device, and electronic device 宁德新能源科技有限公司 2025-04-18 CN claimed
CN-119852528-A Electrolyte, electrochemical device, and electronic device 宁德新能源科技有限公司 2025-04-18 CN claimed
CN-119852530-A Electrolyte, electrochemical device, and electronic device 宁德新能源科技有限公司 2025-04-18 CN claimed
CN-115394958-B Lithium metal negative electrode, preparation method thereof and lithium metal battery 国家能源投资集团有限责任公司 2025-03-28 CN claimed
CN-119517949-A Lithium-carbon composite material, preparation method thereof and negative electrode comprising lithium-carbon composite material 天津中能锂业有限公司 2025-02-25 CN claimed
CN-119517948-A All-solid-state metal lithium battery and preparation method thereof 天津中能锂业有限公司 2025-02-25 CN claimed
CN-119517937-A Metal lithium battery and preparation method thereof 天津中能锂业有限公司 2025-02-25 CN claimed
WO-2025010592-A1 NEGATIVE ELECTRODE SHEET FOR LITHIUM METAL BATTERY, ELECTRODE ASSEMBLY, LITHIUM METAL BATTERY AND ELECTRONIC DEVICE 宁德新能源科技有限公司 2025-01-16 WO claimed
CN-108396149-A The preenrichment heavy-fluid and preprocess method of aluminium lithium gallium are extracted from flyash 太原理工大学 2018-08-14 CN claimed
CN-107760865-A A kind of method of the dipped journey leachate gallium lithium ion enrichment of coal ash alkali 中国科学院过程工程研究所 2018-03-06 CN claimed
EP-3244137-A1 MAGNET SYSTEM FREE OF CRYOGENIC MATERIAL WITH MAGNETOCALORIC HEAT SINK Bruker BioSpin AG (CH) 2017-11-15 EP claimed
CN-103646857-B Semiconductor structure and forming method thereof 清华大学 2016-08-17 CN claimed
US-20100181528-A1 SOLID SOLUTION LITHIUM ALLOY CERMET ANODES ENERGY, UNITED STATES DEPARTMENT OF 2010-07-22 US claimed
WO-2008157067-A1 SOLID SOLUTION LITHIUM ALLOY CERMET ANODES THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2008-12-24 WO claimed
US-7294201-B2 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device SONY CORPORATION (JP) 2007-11-13 US claimed
US-7244308-B2 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device SONY CORPORATION (JP) 2007-07-17 US claimed
US-20010020440-A1 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device SONY CORPORATION (JP) 2001-09-13 US claimed
US-20010003019-A1 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device SONY CORPORATION 2001-06-07 US claimed