Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL137758 | 1.00 | — | — | |
| Water SCHEMBL2865855 | 0.87 | — | — | |
| Water SCHEMBL27872666 | 0.87 | — | — | |
| Iodide SCHEMBL28968053 | 0.87 | — | — | |
| Water SCHEMBL11766081 | 0.82 | — | — | |
| Water SCHEMBL502821 | 0.82 | — | — | |
| Water SCHEMBL11848168 | 0.82 | — | — | |
| Water SCHEMBL20969033 | 0.82 | — | — | |
| Water SCHEMBL5822 | 0.82 | — | — | |
| Water SCHEMBL15416076 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103646857-B | Semiconductor structure and forming method thereof | 清华大学 | 2016-08-17 | — | — | CN | claimed |
| CN-104205370-B | Optical substrate, semiconductor light-emitting element, and method for producing semiconductor light-emitting element | 旭化成株式会社 | 2017-03-22 | — | — | CN | disclosed |
| CN-103748699-B | Optical substrate and semiconductor light-emitting elements | 旭化成株式会社 | 2017-03-15 | — | — | CN | disclosed |
| CN-106460228-A | Process for producing group iii nitride crystal and apparatus for producing group iii nitride crystal | 国立大学法人大阪大学 | 2017-02-22 | — | — | CN | disclosed |
| CN-103548124-B | The method of the III nitride semiconductor growth improved | 应用材料公司 | 2016-10-26 | — | — | CN | disclosed |
| CN-103548117-B | The method of the group III-nitride buffer growth improved | 应用材料公司 | 2016-10-05 | — | — | CN | disclosed |
| CN-103646857-B | Semiconductor structure and forming method thereof | 清华大学 | 2016-08-17 | — | — | CN | disclosed |
| CN-103296154-B | The manufacture method of III group-III nitride semiconductor light-emitting component, III group-III nitride semiconductor light-emitting component, lamp and reticle mask | 丰田合成株式会社 | 2016-08-03 | — | — | CN | disclosed |
| CN-102386201-B | Light emitting device and method for manufacturing the same | 晶元光电股份有限公司 | 2016-07-06 | — | — | CN | disclosed |
| US-8765507-B2 | Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp | TOYODA GOSEI CO., LTD. (JP) | 2014-07-01 | — | — | US | disclosed |
| US-20110284919-A1 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | SHOWA DENKO K.K. (JP) | 2011-11-24 | — | — | US | disclosed |
| US-20110163350-A1 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | SHOWA DENKO K.K. (JP) | 2011-07-07 | — | — | US | disclosed |
| US-20110101391-A1 | GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LAMP | SHOWA DENKO K.K. | 2011-05-05 | — | — | US | disclosed |
| EP-2273536-A1 | GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LAMP | Showa Denko K.K. (JP) | 2011-01-12 | — | — | EP | disclosed |
| US-20100301379-A1 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | TOYODA GOSEI CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100244086-A1 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | SHOWA DENKO K.K. (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100051980-A1 | METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | SHOWA DENKO K.K. (JP) | 2010-03-04 | — | — | US | disclosed |
| US-20100025684-A1 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LAYER, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP | SHOWA DENKO K.K. (JP) | 2010-02-04 | — | — | US | disclosed |
| US-7585690-B2 | Process for producing group III nitride compound semiconductor light emitting device, group III nitride compound semiconductor light emitting device and lamp | SHOWA DENKO K.K. (JP) | 2009-09-08 | — | — | US | disclosed |
| US-20080116478-A1 | PROCESS FOR PRODUCING III GROUP NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, III GROUP NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP | SHOWA DENKO K.K. (JP) | 2008-05-22 | — | — | US | disclosed |