Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL339458 | 1.00 | — | — | |
| Water SCHEMBL2865855 | 0.87 | — | — | |
| Water SCHEMBL27872666 | 0.87 | — | — | |
| Iodide SCHEMBL28968053 | 0.87 | — | — | |
| Water SCHEMBL11766081 | 0.82 | — | — | |
| Water SCHEMBL502821 | 0.82 | — | — | |
| Water SCHEMBL11848168 | 0.82 | — | — | |
| Water SCHEMBL20969033 | 0.82 | — | — | |
| Water SCHEMBL5822 | 0.82 | — | — | |
| Water SCHEMBL15416076 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1102 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12513922-B2 | β-Ga2O3 junction barrier Schottky (JBS) diodes with sputtered p-type NiO | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 2025-12-30 | — | — | US | claimed |
| US-20250185420-A1 | SEMICONDUCTOR LIGHT-EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-06-05 | — | — | US | claimed |
| CN-120091675-A | Semiconductor light emitting device and method of manufacturing the same | 三星电子株式会社 | 2025-06-03 | — | — | CN | claimed |
| US-20250167219-A1 | METHOD TO CONVERT LITHIUM CARBONATE LAYER ON THE SURFACE OF BATTERY CATHODES TO BENEFICIAL COATING LAYERS | UCHICAGO ARGONNE, LLC (US) | 2025-05-22 | — | — | US | claimed |
| CN-119507044-A | Epitaxial growth method of ultra-wide band gap gallium lithium oxide epitaxial film | 苏州镓耀半导体科技有限公司 | 2025-02-25 | — | — | CN | claimed |
| CN-110246948-B | Light emitting diode package and method of manufacturing the same | 三星电子株式会社 | 2024-12-31 | — | — | CN | claimed |
| EP-4371164-A1 | COATING OF CATHODE MATERIALS FOR ENERGY STORAGE DEVICES | Hunt Energy Enterprises, LLC (US) | 2024-05-22 | — | — | EP | claimed |
| US-20230420539-A1 | ß-Ga2O3 Junction Barrier Schottky (JBS) Diodes with Sputtered p-Type NiO | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 2023-12-28 | — | — | US | claimed |
| US-11692962-B2 | Measuring element for anion-sensitive solid-contact electrode and ion-sensitive solid-contact electrode | METTLER-TOLEDO GMBH (CH) | 2023-07-04 | — | — | US | claimed |
| US-11621419-B2 | Composite positive electrode active material for lithium secondary battery, method of preparing the same, positive electrode for lithium secondary battery including the same, and lithium secondary battery including the positive electrode | SAMSUNG SDI CO., LTD. (KR) | 2023-04-04 | — | — | US | claimed |
| EP-1361298-A1 | SEMICONDUCTOR CRYSTAL GROWING METHOD AND SEMICONDUCTOR LIGHT-EMITTING DEVICE | Toyoda Gosei Co., Ltd. (JP) | 2003-11-12 | — | — | EP | claimed |
| US-20030186475-A1 | Method for manufacturing semiconductor thin film | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2003-10-02 | — | — | US | claimed |
| CN-1354528-A | Self-passinvating non-planar junction subgroup III nitride semi-conductor device and its making method | INST OF SEMICONDCUTOR CHINESE (CN) | 2002-06-19 | — | — | CN | claimed |
| US-6406540-B1 | MELTING METAL, SUBLIMING AMMONIUM HALIDE, FLOWING SAID REACTANT GAS INTO CONTACT WITH SAID METAL TO FORM GALLIUM (GAN), ALUMINUM (ALN), INDIUM (INN), GERMANIUM (GEN), ZINC (ZNN) AND TERNARY NITRIDES; HIGH PURITY | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE | 2002-06-18 | — | — | US | claimed |
| US-6358770-B2 | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2002-03-19 | — | — | US | claimed |
| US-6306739-B1 | Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE | 2001-10-23 | — | — | US | claimed |
| US-20010005023-A1 | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same | PANNOVA SEMIC, LLC | 2001-06-28 | — | — | US | claimed |
| CN-1282111-A | Semiconductor laminated substrate, crystal substrate and semiconductor device and manufacturing method thereof | SONY CORP (JP) | 2001-01-31 | — | — | CN | claimed |
| US-5625202-A | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIVERSITY OF CENTRAL FLORIDA (US) | 1997-04-29 | — | — | US | claimed |
| WO-1996042114-A1 | MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH | UNIVERSITY OF CENTRAL FLORIDA (US) | 1996-12-27 | — | — | WO | claimed |