SCHEMBL2017651

SCHEMBL2017651

CCC[SiH](O)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1827792 0.85
SCHEMBL1829074 0.80
SCHEMBL915464 0.76
Benzene SCHEMBL28857089 0.76
SCHEMBL1829570 0.73
SCHEMBL9746825 0.71 TSHR (0.39)
SCHEMBL3626208 0.69
SCHEMBL1827406 0.67
Benzene SCHEMBL28857070 0.67
SCHEMBL3481847 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117730398-A Resin composition for dicing protective layer and method for processing semiconductor wafer 株式会社力森诺科 2024-03-19 CN disclosed
WO-2022129201-A1 PLATELET-LIKE MATTING AGENT FOR POWDER COATING AND POWDER COATINGS ECKART GMBH (DE) 2022-06-23 WO disclosed
EP-2698403-B1 Surface modified pearlescent pigments and their use in powder coatings ECKART GMBH (DE) 2018-01-03 EP disclosed
US-9680183-B2 Lithium secondary battery and method for producing same TOYOTA JIDOSHA KABUSHIKI KAISHA (JP) 2017-06-13 US disclosed
US-20150221983-A1 LITHIUM SECONDARY BATTERY AND METHOD FOR PRODUCING SAME TOYOTA JIDOSHA KABUSHIKI KAISHA (JP) 2015-08-06 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
EP-2318463-B1 METAL EFFECT PIGMENTS, METHOD FOR THE PRODUCTION AND THE USE THEREOF AND POWDER COATING ECKART GMBH (DE) 2014-10-01 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
EP-2698403-A1 Surface modified pearlescent pigments and their use in powder coatings Eckart GmbH (DE) 2014-02-19 EP disclosed
CN-102089390-B Metal pigments, coating powder, method for the production and the use thereof ECKART GMBH 2013-09-04 CN disclosed
US-8304077-B2 Metal effect pigments, method for the production and the use thereof and powder coating ECKART GMBH (DE) 2012-11-06 US disclosed
US-20110160389-A1 METAL EFFECT PIGMENTS, METHOD FOR THE PRODUCTION AND THE USE THEREOF AND POWDER COATING ECKART GMBH (DE) 2011-06-30 US disclosed
CN-102089390-A Metal effect pigments, method for the production and the use thereof and powder coating ECKART GMBH 2011-06-08 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed