⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11593625 | 1.00 | — | — | |
| SCHEMBL30293108 | 0.89 | — | — | |
| Selenium SCHEMBL29636323 | 0.89 | — | — | |
| SCHEMBL4527340 | 0.87 | — | — | |
| SCHEMBL9897644 | 0.87 | — | — | |
| SCHEMBL32675818 | 0.87 | — | — | |
| Selenium SCHEMBL1199666 | 0.75 | — | — | |
| SCHEMBL3279167 | 0.75 | — | — | |
| SCHEMBL6476217 | 0.75 | — | — | |
| SCHEMBL347972 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8664632-B2 | Memory device | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-03-04 | — | — | US | claimed |
| US-20130228736-A1 | MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-09-05 | — | — | US | claimed |
| EP-1501124-B1 | SOLID ELECTROLYTE SWITCHING DEVICES, FPGA AND MEMORY DEVICES USING THE SAME, AND METHOD OF MANUFACTURING THE SAME | JAPAN SCIENCE & TECH AGENCY (JP) | 2011-06-08 | — | — | EP | claimed |
| US-7750332-B2 | Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device | JAPAN SCIENCE AND TECHNOLOGY AGENCY (JP) | 2010-07-06 | — | — | US | claimed |
| CN-100334735-C | Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device | JAPAN SCIENCE & TECH AGENCY (JP) | 2007-08-29 | — | — | CN | claimed |
| CN-1650419-A | Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device | JAPAN SCIENCE & TECH AGENCY (JP) | 2005-08-03 | — | — | CN | claimed |
| US-20050127524-A1 | Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device | NANOBRIDGE SEMICONDUCTOR, INC. (JP) | 2005-06-16 | — | — | US | claimed |
| EP-1501124-A1 | SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME, MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLID ELECTROLYTE SWITCHING DEVICE | Japan Science and Technology Agency (JP) | 2005-01-26 | — | — | EP | claimed |
| US-12628573-B2 | Trimming intermediate carbon layer to achieve nanometer scale patterning | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2026-05-12 | — | — | US | disclosed |
| US-20250185524-A1 | TRIMMING INTERMEDIATE CARBON LAYER TO ACHIEVE NANOMETER SCALE PATTERNING | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2025-06-05 | — | — | US | disclosed |
| CN-118016128-A | Memory chip, memory device and electronic device | 华为技术有限公司 | 2024-05-10 | — | — | CN | disclosed |
| US-20240099163-A1 | Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Material | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2024-03-21 | — | — | US | disclosed |
| US-20240099166-A1 | Boron Surface Passivation of Phase Change Memory Material | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2024-03-21 | — | — | US | disclosed |
| CN-109686838-B | SUPERLATTICE-LIKE (SUPERLATTICE-LIKE) switching element | 旺宏电子股份有限公司 | 2023-04-07 | — | — | CN | disclosed |
| US-20050127524-A1 | Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device | NANOBRIDGE SEMICONDUCTOR, INC. (JP) | 2005-06-16 | — | — | US | disclosed |
| EP-1501124-A1 | SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME, MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLID ELECTROLYTE SWITCHING DEVICE | Japan Science and Technology Agency (JP) | 2005-01-26 | — | — | EP | disclosed |
| US-5209987-A | Adherent coating of refractory metal compound | RAYCHEM LIMITED (GB) | 1993-05-11 | — | — | US | disclosed |
| US-4985313-A | Wire and cable | RAYCHEM LIMITED (GB) | 1991-01-15 | — | — | US | disclosed |
| EP-0190888-A2 | Electrical component | RAYCHEM LIMITED (GB) | 1986-08-13 | — | — | EP | disclosed |
| US-4097834-A | Non-linear resistors | MOTOROLA, INC. (US) | 1978-06-27 | — | — | US | disclosed |