⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2027156 | 0.87 | — | — | |
| Selenium SCHEMBL1199666 | 0.87 | — | — | |
| SCHEMBL11593625 | 0.87 | — | — | |
| SCHEMBL347972 | 0.87 | — | — | |
| SCHEMBL29456050 | 0.82 | — | — | |
| SCHEMBL338099 | 0.82 | — | — | |
| SCHEMBL1225720 | 0.82 | — | — | |
| SCHEMBL1917094 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL10414786 | 0.67 | — | — | |
| Selenium SCHEMBL232829 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11696520-B2 | Semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2023-07-04 | — | — | US | claimed |
| US-20220140238-A1 | SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME | SK Hynix Inc. | 2022-05-05 | — | — | US | claimed |
| CN-114429969-A | Semiconductor device having three-dimensional cell structure and method of manufacturing the same | 爱思开海力士有限公司 | 2022-05-03 | — | — | CN | claimed |
| US-12471509-B2 | Method of manufacturing a semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2025-11-11 | — | — | US | disclosed |
| CN-222483385-U | Semiconductor device structure | 台湾积体电路制造股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| CN-222483383-U | Semiconductor device structure | 台湾积体电路制造股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| US-20240389486-A1 | CAPACITOR CIRCUIT PROVIDING SELF-ADJUSTING CAPACITANCE AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240389487-A1 | DIRECT NON-OHMIC SWITCH FOR VOLTAGE INSTABILITY PROTECTION AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-11-21 | — | — | US | disclosed |
| CN-118016128-A | Memory chip, memory device and electronic device | 华为技术有限公司 | 2024-05-10 | — | — | CN | disclosed |
| CN-110176471-B | Cross-point array device and method of manufacturing the same | 爱思开海力士有限公司 | 2023-10-03 | — | — | CN | disclosed |
| US-20230292638-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE | SK Hynix Inc. (KR) | 2023-09-14 | — | — | US | disclosed |
| US-8599607-B2 | Diode and memory device having a diode | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) | 2013-12-03 | — | — | US | disclosed |
| US-20130280882-A1 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-10-24 | — | — | US | disclosed |
| US-8541767-B2 | Memory component having an electrical contact free of a metal layer | NATIONAL UNIVERSITY OF SINGAPORE (SG) | 2013-09-24 | — | — | US | disclosed |
| US-20130134383-A1 | NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | SK Hynix Inc. (KR) | 2013-05-30 | — | — | US | disclosed |
| US-20130077383-A1 | Writing Circuit for a Resistive Memory Cell Arrangement and a Memory Cell Arrangement | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) | 2013-03-28 | — | — | US | disclosed |
| US-20120267595-A1 | MEMORY COMPONENT AND A MEMORY CELL | National University of Singapore and Agency for Science Technology and Research | 2012-10-25 | — | — | US | disclosed |
| US-20120252187-A1 | Semiconductor Device and Method of Manufacturing the Same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-10-04 | — | — | US | disclosed |
| US-20120147668-A1 | Diode and Memory Device Having a Diode | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH | 2012-06-14 | — | — | US | disclosed |
| US-20110300685-A1 | METHODS FOR FABRICATING PHASE CHANGE MEMORY DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-12-08 | — | — | US | disclosed |