⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL239489 | 0.83 | LMNA (0.50) | — | |
| SCHEMBL11472589 | 0.80 | HSD17B10 (0.39) | — | |
| SCHEMBL11464378 | 0.77 | TSHR (0.33) | — | |
| SCHEMBL8721790 | 0.72 | — | — | |
| SCHEMBL8373284 | 0.71 | ALDH1A1 (0.31) | — | |
| SCHEMBL11456415 | 0.69 | — | — | |
| SCHEMBL1487923 | 0.69 | — | — | |
| SCHEMBL786921 | 0.69 | — | — | |
| SCHEMBL2058394 | 0.68 | — | — | |
| SCHEMBL11230118 | 0.68 | ALDH1A1 (0.42) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| US-8163095-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-24 | — | — | US | disclosed |
| US-20110206829-A1 | COMPOSITION FOR STRIPPING AND STRIPPING METHOD | SAMSUNG DISPLAY CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |
| US-4223138-A | VAPORIZATION, CONDENSATION, RETARDING FLOW TO REACTION ZONE | BAYER AKTIENGESELLSCHAFT (DE) | 1980-09-16 | — | — | US | disclosed |