SCHEMBL20580451

SCHEMBL20580451

O=S(=O)([O-])OOS(=O)(=O)[O-].[Mn+2]

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33
TSHR P16473 1/20 0.33
KMT2A Q03164 1/20 0.33
CA2 P00918 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17513048 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL6545746 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL2337584 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580471 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580373 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL14801789 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL3081554 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580591 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580570 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
Sodium Persulfate SCHEMBL9188 0.91 TSHR (0.43) MEN1ALDH1A1TSHRKMT2ACA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119361718-A Application of in-situ growth three-dimensional ZIF-8/MXene composite material in preparation of zinc-iodine battery 山东大学 2025-01-24 CN claimed
CN-114380319-B Novel rare earth oxysulfide with sheet stacking spherical structure and preparation method and application thereof 厦门稀土材料研究所 2024-02-13 CN claimed
CN-116639862-A Dehydrating agent for bauxite tailing slurry and preparation method thereof 山东诺尔生物科技有限公司 2023-08-25 CN claimed
CN-115286790-B Iodine capturing material and preparation method and application thereof 太原理工大学 2023-05-23 CN claimed
CN-115403042-A Hierarchical porous carbon material for efficiently capturing iodine and preparation method and application thereof 太原理工大学 2022-11-29 CN claimed
CN-115286790-A Iodine capture material and preparation method and application thereof 太原理工大学 2022-11-04 CN claimed
CN-114380319-A Novel sheet-stacked spherical-structure rare earth oxysulfide, and preparation method and application thereof 厦门稀土材料研究所 2022-04-22 CN claimed
US-10711160-B2 Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-07-14 US claimed
CN-108188165-B Method for degrading chloramphenicol antibiotics in soil or clay 上海市农业科学院 2020-05-26 CN claimed
US-20180355213-A1 Slurry Compositions for Polishing a Metal Layer and Methods for Fabricating Semiconductor Devices Using the Same KCTECH CO.,LTD. (KR) 2018-12-13 US claimed
CN-119806348-A Touch structure, preparation method thereof, touch screen and electronic equipment 深圳市欣威智能有限公司 2025-04-11 CN disclosed
CN-119361718-A Application of in-situ growth three-dimensional ZIF-8/MXene composite material in preparation of zinc-iodine battery 山东大学 2025-01-24 CN disclosed
CN-114380319-B Novel rare earth oxysulfide with sheet stacking spherical structure and preparation method and application thereof 厦门稀土材料研究所 2024-02-13 CN disclosed
CN-116639862-A Dehydrating agent for bauxite tailing slurry and preparation method thereof 山东诺尔生物科技有限公司 2023-08-25 CN disclosed
CN-115286790-B Iodine capturing material and preparation method and application thereof 太原理工大学 2023-05-23 CN disclosed
CN-108188165-B Method for degrading chloramphenicol antibiotics in soil or clay 上海市农业科学院 2020-05-26 CN disclosed
CN-110404526-A Based on the derivative La of MOFs2O3The method that@C activates persulfate removal PPCPs and As (III) INST URBAN ENVIRONMENT CAS 2019-11-05 CN disclosed
CN-109021833-A The method of paste compound and production semiconductor device for polishing metal layer 三星电子株式会社 2018-12-18 CN disclosed
US-20180355213-A1 Slurry Compositions for Polishing a Metal Layer and Methods for Fabricating Semiconductor Devices Using the Same KCTECH CO.,LTD. (KR) 2018-12-13 US disclosed
CN-1910769-A Cathode material for lithium battery GILLETTE CO (US) 2007-02-07 CN disclosed